Publications

Found 19 results
Author Title Type [ Year(Asc)]
Filters: Author is Tarsa, EJ  [Clear All Filters]
1999
Heying, B., EJ. Tarsa, CR. Elsass, P. Fini, SP. DenBaars, and JS. Speck, "Dislocation mediated surface morphology of GaN", Journal of Applied Physics, vol. 85, no. 9: AIP, pp. 6470–6476, 1999.
1998
Wu, XH., P. Fini, EJ. Tarsa, B. Heying, S. Keller, UK. Mishra, SP. DenBaars, and JS. Speck, "Dislocation generation in GaN heteroepitaxy", Journal of Crystal Growth, vol. 189: North-Holland, pp. 231–243, 1998.
Fini, P., X. Wu, EJ. Tarsa, Y. Golan, V. Srikant, S. Keller, SP. DenBaars, and JS. Speck, "The effect of growth environment on the morphological and extended defect evolution in GaN grown by metalorganic chemical vapor deposition", Japanese journal of applied physics, vol. 37, no. 8R: IOP Publishing, pp. 4460, 1998.
Hansen, PJ., YE. Strausser, AN. Erickson, EJ. Tarsa, P. Kozodoy, EG. Brazel, JP. Ibbetson, U. Mishra, V. Narayanamurti, SP. DenBaars, et al., "Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition", Applied physics letters, vol. 72, no. 18: AIP, pp. 2247–2249, 1998.
Fini, P., X. Wu, EJ. Tarsa, Y. Golan, V. Srikant, S. Keller, SP. DenBaars, and JS. Speck, "Structure and Mechanical and Thermal Properties of Condensed Matter-The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor", Japanese Journal of Applied Physics-Part 1 Regular Papers and Short Notes, vol. 37, no. 8: Tokyo, Japan: Publication Board, Japanese Journal of Applied Physics, c1982-, pp. 4460–4466, 1998.
1997
Zinck, JJ., EJ. Tarsa, B. Brar, and JS. Speck, "Desorption behavior of antimony multilayer passivation on GaAs (001)", Journal of applied physics, vol. 82, no. 12: AIP, pp. 6067–6072, 1997.
Tarsa, EJ., B. Heying, XH. Wu, P. Fini, SP. DenBaars, and JS. Speck, "Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy", Journal of applied physics, vol. 82, no. 11: AIP, pp. 5472–5479, 1997.
Eddy, MM., R. Hanson, MR. Rao, B. Zuck, JS. Speck, and EJ. Tarsa, "Oxide epitaxial lift-off (OELO)", MRS Online Proceedings Library Archive, vol. 474: Cambridge University Press, 1997.
1996
Tarsa, EJ., EA. Hachfeld, FT. Quinlan, JS. Speck, and M. Eddy, "Growth-related stress and surface morphology in homoepitaxial SrTiO3 films", Applied physics letters, vol. 68, no. 4: AIP, pp. 490–492, 1996.
Wu, XH., P. Fini, S. Keller, EJ. Tarsa, B. Heying, UK. Mishra, SP. DenBaars, and JS. Speck, "Morphological and structural transitions in GaN films grown on sapphire by metal-organic chemical vapor deposition", Japanese journal of applied physics, vol. 35, no. 12B: IOP Publishing, pp. L1648, 1996.
Wu, XH., D. Kapolnek, EJ. Tarsa, B. Heying, S. Keller, BP. Keller, UK. Mishra, SP. DenBaars, and JS. Speck, "Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN", Applied physics letters, vol. 68, no. 10: AIP, pp. 1371–1373, 1996.
1995
Srikant, V., EJ. Tarsa, DR. Clarke, and JS. Speck, "Crystallographic orientation of epitaxial BaTiO3 films: The role of thermal-expansion mismatch with the substrate", Journal of applied physics, vol. 77, no. 4: AIP, pp. 1517–1522, 1995.
Tarsa, EJ., XH. Wu, JP. Ibbetson, JS. Speck, and JJ. Zinck, "Growth of epitaxial MgO films on Sb-passivated (001) GaAs: Properties of the MgO/GaAs interface", Applied physics letters, vol. 66, no. 26: AIP, pp. 3588–3590, 1995.
1994
Tarsa, EJ., KL. McCormick, and JS. Speck, "Common Themes in ther Epitaxial Growth of Oxides on Semiconductors", MRS Online Proceedings Library Archive, vol. 341: Cambridge University Press, 1994.
1993
Tarsa, EJ., M. De Graef, DR. Clarke, AC. Gossard, and JS. Speck, "Growth and characterization of (111) and (001) oriented MgO films on (001) GaAs", Journal of applied physics, vol. 73, no. 7: AIP, pp. 3276–3283, 1993.
Fork, DK., JJ. Kingston, GB. Anderson, EJ. Tarsa, and JS. Speck, "Progress toward viable epitaxial oxide ferroelectric waveguide heterostructures on GaAs", MRS Online Proceedings Library Archive, vol. 310: Cambridge University Press, 1993.
Tarsa, EJ., JS. Speck, and MD. Robinson, "Pulsed laser deposition of epitaxial silicon/h-Pr2O3/silicon heterostructures", Applied physics letters, vol. 63, no. 4: AIP, pp. 539–541, 1993.
Tarsa, EJ., JH. English, and JS. Speck, "Pulsed laser deposition of oriented In2O3 on (001) InAs, MgO, and yttria-stabilized zirconia", Applied physics letters, vol. 62, no. 19: AIP, pp. 2332–2334, 1993.
1992
Williams, KE., EJ. Tarsa, and JS. Speck, "Growth of InAs on diamond (001) by molecular beam epitaxy", Applied physics letters, vol. 61, no. 4: AIP, pp. 405–407, 1992.