Publications
] , "Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures", APL Materials, vol. 4, no. 1: AIP Publishing, pp. 016105, 2016.
, "Dislocations in LD and LED semiconductor heterostructures", Laser Optics (LO), 2016 International Conference: IEEE, pp. R3–11, 2016.
, "Misfit dislocation formation at heterointerfaces in (Al, In) GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates", Journal of Applied Physics, vol. 109, no. 3: AIP, pp. 033505, 2011.
, "Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures", Applied Physics Letters, vol. 99, no. 25: AIP, pp. 251909, 2011.
, "Cracking of III-nitride layers with strain gradients", Applied physics letters, vol. 89, no. 16: AIP, pp. 161922, 2006.
, "Strain-induced polarization in wurtzite III-nitride semipolar layers", Journal of Applied Physics, vol. 100, no. 2: AIP, pp. 023522, 2006.
, "Buried stressors in nitride semiconductors: Influence on electronic properties", Journal of applied physics, vol. 97, no. 4: AIP, pp. 043708, 2005.
, "Modeling of twinning in epitaxial (001)-oriented La 0.67 Sr 0.33 MnO 3 thin films", Journal of applied physics, vol. 97, no. 11: AIP, pp. 113516, 2005.
, "Rhombohedral LSMO films–a unique case of ferroelastic domain formation", physica status solidi (a), vol. 202, no. 4: WILEY-VCH Verlag, 2005.
, "Role of inclined threading dislocations in stress relaxation in mismatched layers", Journal of applied physics, vol. 97, no. 10: AIP, pp. 103534, 2005.
, "Modeling crosshatch surface morphology in growing mismatched layers. Part II: Periodic boundary conditions and dislocation groups", Journal of applied physics, vol. 95, no. 11: AIP, pp. 6032–6047, 2004.
, "Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer", Journal of Crystal Growth, vol. 273, no. 1-2: North-Holland, pp. 38–47, 2004.
, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERT1ES OF CONDENSED MATTER (PACS 61-68, 78)-Modeling crosshatch surface moiphology in grovving mismatched layers. Part II: Periodic boundary", Journal of Applied Physics, vol. 95, no. 11: New York, NY: American Institute of Physics, c1937-, pp. 6032–6047, 2004.
, "Modeling the extended defect evolution in lateral epitaxial overgrowth of GaN: Subgrain stability", Journal of applied physics, vol. 93, no. 1: AIP, pp. 106–114, 2003.
, "Si doping effect on strain reduction in compressively strained Al 0.49 Ga 0.51 N thin films", Applied physics letters, vol. 83, no. 4: AIP, pp. 674–676, 2003.
, "Si doping effects on the electrical and structural properties of high Al composition AlxGa1- xN films grown by MOCVD", physica status solidi (c), no. 7: Wiley Online Library, pp. 2010–2013, 2003.
, "Stress relaxation in mismatched layers due to threading dislocation inclination", Applied Physics Letters, vol. 83, no. 13: AIP, pp. 2569–2571, 2003.
, "Electronic properties of GaN induced by a subsurface stressor", Applied physics letters, vol. 81, no. 25: AIP, pp. 4754–4756, 2002.
, "Modeling cross-hatch surface morphology in growing mismatched layers", Journal of applied physics, vol. 91, no. 4: AIP, pp. 1933–1943, 2002.
, "Peculiarities of domain patterns in epitaxially grown ferroelectric thin films", Solid State Phenomena, vol. 87: Trans Tech Publications, pp. 245–254, 2002.
, "Development of cross-hatch morphology during growth of lattice mismatched layers", MRS Online Proceedings Library Archive, vol. 673: Cambridge University Press, 2001.
, "Elastic fields of quantum dots in subsurface layers", Journal of applied physics, vol. 89, no. 8: AIP, pp. 4523–4531, 2001.
, "Modeling of threading dislocation reduction in growing GaN layers", Journal of crystal growth, vol. 231, no. 3: North-Holland, pp. 371–390, 2001.
, "Modeling of threading dislocation reduction in growing GaN layers", Physica Status Solidi A Applied Research, vol. 179, no. 1: ACADEMIC VERLAG GMBH, pp. 125–146, 2000.
, "Relaxation enhancing interlayers (REIs) in threading dislocation reduction", Journal of Electronic Materials, vol. 29, no. 7: Springer-Verlag, pp. 901–905, 2000.