Publications
Found 17 results
Author Title Type [ Year
] Filters: Author is Mishra, UK and First Letter Of Title is S [Clear All Filters]
, "Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire", Applied Physics Letters, vol. 67, no. 11: AIP, pp. 1541–1543, 1995.
, "Strain relaxation of In x Ga 1- x As during lateral oxidation of underlying AlAs layers", Applied physics letters, vol. 75, no. 15: AIP, pp. 2253–2255, 1999.
, "Structural and optical properties of low-dislocation-density GaN laterally overgrown by metalorganic chemical vapor deposition", COMPOUND SEMICONDUCTORS 1998, no. 162: IOP PUBLISHING LTD DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND, pp. 681–686, 1999.
, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers", Applied Physics Letters, vol. 75, no. 12: New York [etc.] American Institute of Physics., pp. 1706–1708, 1999.
, "Strain relaxation in InGaAs lattice engineered substrates", Journal of Electronic Materials, vol. 29, no. 7: Springer-Verlag, pp. 944–949, 2000.
, "Strain relaxation of InGaAs by lateral oxidation of AlAs", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 18, no. 4: AVS, pp. 2066–2071, 2000.
, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-Reactive removal of misfit dislocations from InGaAs on GaAs by lateral oxidation", Applied Physics Letters, vol. 77, no. 6: New York [etc.] American Institute of Physics., pp. 845–847, 2000.
, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy", Applied Physics Letters, vol. 76, no. 6: New York [etc.] American Institute of Physics., pp. 718–720, 2000.
, "Small signal RF performance of AlGaN/GaN heterojunction bipolar transistors", Electronics Letters, vol. 38, no. 3: IET Digital Library, pp. 144–145, 2002.
, "Si doping effect on strain reduction in compressively strained Al 0.49 Ga 0.51 N thin films", Applied physics letters, vol. 83, no. 4: AIP, pp. 674–676, 2003.
, "Si doping effects on the electrical and structural properties of high Al composition AlxGa1- xN films grown by MOCVD", physica status solidi (c), no. 7: Wiley Online Library, pp. 2010–2013, 2003.
, "Structural and electrical characterization of a-plane GaN grown on a-plane SiC", physica status solidi (c), no. 7: Wiley Online Library, pp. 2132–2135, 2003.
, "Study of deleterious aging effects in GaN/AlGaN heterostructures", Journal of applied physics, vol. 93, no. 2: AIP, pp. 1079–1082, 2003.
, "Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer", Journal of Crystal Growth, vol. 273, no. 1-2: North-Holland, pp. 38–47, 2004.
, "Step-flow growth of ZnO (0 0 0 1) on GaN (0 0 0 1) by metalorganic chemical vapor epitaxy", Journal of Crystal Growth, vol. 310, no. 15: North-Holland, pp. 3407–3412, 2008.
, "Scaling behavior and velocity enhancement in self-aligned N-polar GaN/AlGaN HEMTs with maximum fT of 163 GHz", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 141–142, 2011.
, "Spatially-resolved spectroscopic measurements of Ec- 0.57 eV traps in AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 102, no. 19: AIP, pp. 193509, 2013.