Publications

Found 367 results
Author Title Type [ Year(Asc)]
Filters: Author is Nakamura, Shuji  [Clear All Filters]
2012
Koslow, I. L., M. T. Hardy, P. Shan Hsu, P-Y. Dang, F. Wu, A. Romanov, Y-R. Wu, E. C. Young, S. Nakamura, J. S. Speck, et al., "Performance and polarization effects in (11 2\= 2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers", Applied Physics Letters, vol. 101, no. 12: AIP, pp. 121106, 2012.
Hirai, A., Z. Jia, M. Saito, H. Yamada, K. Iso, S. P. DenBaars, S. Nakamura, and J. S. Speck, Planar nonpolar m-plane group III nitride films grown on miscut substrates, 2012.
Pan, C-C., T. Gilbert, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Reduction in thermal droop using thick single-quantum-well structure in semipolar (2021) blue light-emitting diodes", Applied Physics Express, vol. 5, no. 10: IOP Publishing, pp. 102103, 2012.
Chung, R. B., C. Han, C-C. Pan, N. Pfaff, J. S. Speck, S. P. DenBaars, and S. Nakamura, "The reduction of efficiency droop by Al0. 82In0. 18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes", Applied Physics Letters, vol. 101, no. 13: AIP, pp. 131113, 2012.
Zhao, Y., C-Y. Huang, S. Tanaka, C-C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. DenBaars, and S. Nakamura, "Semipolar (20-2-1) Blue and Green InGaN Light-Emitting Diodes", CLEO: Applications and Technology: Optical Society of America, pp. JTh4J–2, 2012.
Huang, C-Y., Y. Zhao, M. Hardy, D. Feezell, J. S. Speck, S. DenBaars, and S. Nakamura, "Semipolar (20-2-1) Laser Diodes (λ= 505nm) with Wavelength-Stable InGaN/GaN Quantum Wells", CLEO: Science and Innovations: Optical Society of America, pp. CTu2N–5, 2012.
Hardy, M. T., S. P. DenBaars, J. S. Speck, and S. Nakamura, Strain compensated short-period superlattices on semipolar or nonpolar gan for defect reduction and stress engineering, 2012.
Hsu, P. Shan, M. T. Hardy, E. C. Young, A. E. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Stress relaxation and critical thickness for misfit dislocation formation in (10 1\= 0) and (30 31\=) InGaN/GaN heteroepitaxy", Applied Physics Letters, vol. 100, no. 17: AIP, pp. 171917, 2012.
Hardy, M. T., E. C. Young, P. Shan Hsu, D. A. Haeger, I. L. Koslow, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (20 2\= 1) InGaN/GaN heterostructures", Applied Physics Letters, vol. 101, no. 13: AIP, pp. 132102, 2012.
Iza, M., C. J. Neufeld, S. C. Cruz, R. M. Farrell, J. S. Speck, S. Nakamura, S. P. DenBaars, and U. K. Mishra, Textured iii-v semiconductor, may # " 3", 2012.
Zhong, H., A. Tyagi, J. Stephen Speck, S. P. DenBaars, and S. Nakamura, Thin p-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes, 2012.
Hardy, M. T., P. Shan Hsu, F. Wu, I. L. Koslow, E. C. Young, S. Nakamura, A. E. Romanov, S. P. DenBaars, and J. S. Speck, "Trace analysis of non-basal plane misfit stress relaxation in (20 2\= 1) and (30 3\= 1\=) semipolar InGaN/GaN heterostructures", Applied Physics Letters, vol. 100, no. 20: AIP, pp. 202103, 2012.
Speck, J. S., A. Tyagi, A. E. Romanov, S. Nakamura, and S. P. DenBaars, Vicinal semipolar iii-nitride substrates to compensate tilt of relaxed hetero-epitaxial layers, 2012.
2011
Raring, J. W., M. C. Schmidt, C. Poblenz, M. J. Mondry, P. Rudy, J. S. Speck, S. P. DenBaars, and S. Nakamura, "47.1: Invited Paper: Progress in Green and Blue Laser Diodes and Their Application in Pico Projection Systems", SID Symposium Digest of Technical Papers, vol. 42, no. 1: Wiley Online Library, pp. 677–680, 2011.
Chung, R. Byung- Kyu, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Abnormal Behavior of MOCVD Grown Al x In 1-x N Observed by Various Material Characterizations", 한국재료학회, vol. 17, 10/2011.
Pimputkar, S., D. S. Kamber, J. S. Speck, and S. Nakamura, Addition of hydrogen and/or nitrogen containing compounds to the nitrogen-containing solvent used during the ammonothermal growth of group-iii nitride crystals, sep # " 1", 2011.
Bryant, B. N., D. S. Kamber, F. Wu, S. Nakamura, and J. S. Speck, "Aluminum nitride grown on lens shaped patterned sapphire by hydride vapor phase epitaxy", physica status solidi (c), vol. 8, no. 5: Wiley Online Library, pp. 1463–1466, 2011.
Romanov, A. E., E. C. Young, F. Wu, A. Tyagi, C. S. Gallinat, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy", Journal of Applied Physics, vol. 109, no. 10: AIP, pp. 103522, 2011.
Pimputkar, S., S. Kawabata, J. Speck, and S. Nakamura, "Bulk GaN Growth on GaN Seeds of Varying Orientations in Supercritical Basic Ammonia", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Pimputkar, S., D. S. Kamber, J. S. Speck, and S. Nakamura, Controlling relative growth rates of different exposed crystallographic facets of a group-iii nitride crystal during the ammonothermal growth of a group-iii nitride crystal, 2011.
Huang, C-Y., M. T. Hardy, K. Fujito, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Demonstration of 505 nm laser diodes using wavelength-stable semipolar (20 21) InGaN/GaN quantum wells", Applied Physics Letters, vol. 99, no. 24: AIP, pp. 241115, 2011.
Neufeld, C. J., S. C. Cruz, R. M. Farrell, M. Iza, J. R. Lang, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Effect of doping and polarization on carrier collection in InGaN quantum well solar cells", Applied Physics Letters, vol. 98, no. 24: AIP, pp. 243507, 2011.
Hardy, MT., RM. Farrell, P. S. Hsu, DA. Haeger, K. Kelchner, K. Fujito, A. Chakraborty, DA. Cohen, S. Nakamura, JS. Speck, et al., "Effect of n-AlGaN cleave assistance layers on the morphology of c-plane cleaved facets for m-plane InGaN/GaN laser diodes", physica status solidi (c), vol. 8, no. 7-8: Wiley Online Library, pp. 2226–2228, 2011.
Masui, H., H. Yamada, K. Iso, J. S. Speck, S. Nakamura, and S. P. DenBaars, Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporation, 2011.
Kamber, D. S., S. Pimputkar, M. Saito, S. P. DenBaars, J. S. Speck, and S. Nakamura, Group-iii nitride monocrystal with improved purity and method of producing the same, 2011.

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