Publications
] , "A new system for sodium flux growth of bulk GaN. Part II: in situ investigation of growth processes", Journal of Crystal Growth, vol. 456: North-Holland, pp. 67–72, 2016.
, "Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates", Optics Express, vol. 24, no. 20: Optical Society of America, pp. 22875–22880, 2016.
, "Properties of near-field photoluminescence in green emitting single and multiple semipolar (20< span style=", Optical Materials Express, vol. 6, no. 1: Optical Society of America, pp. 39–45, 2016.
, "Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to 1 W", Applied Physics Express, vol. 9, no. 10: IOP Publishing, pp. 102102, 2016.
, "Smooth and selective photo-electrochemical etching of heavily doped GaN: Si using a mode-locked 355 nm microchip laser", Applied Physics Express, vol. 10, no. 1: IOP Publishing, pp. 011001, 2016.
, "On the solubility of gallium nitride in supercritical ammonia–sodium solutions", Journal of Crystal Growth, vol. 456: North-Holland, pp. 5–14, 2016.
, "Stability of materials in supercritical ammonia solutions", The Journal of Supercritical Fluids, vol. 110: Elsevier, pp. 193–229, 2016.
, "Tunnel junction devices with monolithic optically pumped and electrically injected InGaN quantum wells for polarized white light emission", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–1, 2016.
, "2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system", Optics express, vol. 23, no. 23: Optical Society of America, pp. 29779–29787, 2015.
, "2.6 GHz high-speed visible light communication of 450 nm GaN laser diode by direct modulation", Summer Topicals Meeting Series (SUM), 2015: IEEE, pp. 228–229, 2015.
, "4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication", Optics express, vol. 23, no. 12: Optical Society of America, pp. 16232–16237, 2015.
, Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes, may # " 26", 2015.
, "Continuous-wave operation of a InGaN laser diode with a photoelectrochemically etched current aperture", Applied Physics Express, vol. 8, no. 4: IOP Publishing, pp. 042701, 2015.
, "Demonstration of low resistance ohmic contacts to p-type (202Ø1Ø) GaN", Semiconductor Science and Technology, vol. 30, no. 7: IOP Publishing, pp. 075007, 2015.
, "Electroluminescence characteristics of blue InGaN quantum wells on m-plane GaN ìdouble miscutî substrates", Applied Physics Express, vol. 8, no. 6: IOP Publishing, pp. 061002, 2015.
, "InGaN lattice constant engineering via growth on (In, Ga) N/GaN nanostripe arrays", Semiconductor Science and Technology, vol. 30, no. 10: IOP Publishing, pp. 105020, 2015.
, "Low damage dry etch for III-nitride light emitters", Semiconductor Science and Technology, vol. 30, no. 8: IOP Publishing, pp. 085019, 2015.
, "Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate", Photonics Conference (IPC), 2015: IEEE, pp. 581–582, 2015.
, "Low-energy electro-and photo-emission spectroscopy of GaN materials and devices", Journal of Applied Physics, vol. 117, no. 11: AIP Publishing, pp. 112814, 2015.
, "$ m $-Plane GaN Growth on``Double Miscut''Bulk Substrates for Blue Laser Diode Applications", Bulletin of the American Physical Society, vol. 60: APS, 2015.