Publications

Found 367 results
Author Title Type [ Year(Asc)]
Filters: Author is Nakamura, Shuji  [Clear All Filters]
2011
Hardy, M. T., Y-. Da Lin, H. Ohta, S. P. DenBaars, J. S. Speck, S. Nakamura, and K. M. Kelchner, Superluminescent diodes by crystallographic etching, 2011.
Chung, R. B., O. Bierwagen, F. Wu, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al0. 82In0. 18N Grown on GaN", Japanese Journal of Applied Physics, vol. 50, no. 10R: IOP Publishing, pp. 101001, 2011.
2010
Kelchner, K. M., R. M. Farrell, Y-. Da Lin, P. Shan Hsu, M. T. Hardy, F. Wu, D. A. Cohen, H. Ohta, J. S. Speck, S. Nakamura, et al., "Continuous-wave operation of pure blue AlGaN-cladding-free nonpolar InGaN/GaN laser diodes", Applied Physics Express, vol. 3, no. 9: IOP Publishing, pp. 092103, 2010.
Pimputkar, S., D. S. Kamber, M. Saito, S. P. DenBaars, J. S. Speck, and S. Nakamura, Group-iii nitride monocrystal with improved crystal quality grown on an etched-back seed crystal and method of producing the same, 2010.
Kamber, D. S., S. Nakamura, and J. S. Speck, Growth and manufacture of reduced dislocation density and free-standing aluminum nitride films by hydride vapor phase epitaxy, mar # " 18", 2010.
Haskell, B. A., M. D. Craven, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura, Growth of reduced dislocation density non-polar gallium nitride, 2010.
Saito, M., S. P. DenBaars, J. S. Speck, and S. Nakamura, Hexagonal wurtzite single crystal and hexagonal wurtzite single crystal substrate, 2010.
Da Lin, Y-., S. Yamamoto, C-Y. Huang, C-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes", Applied Physics Express, vol. 3, no. 8: IOP Publishing, pp. 082001, 2010.
Hsu, P. Shan, K. M. Kelchner, A. Tyagi, R. M. Farrell, D. A. Haeger, K. Fujito, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, "InGaN/GaN blue laser diode grown on semipolar (3031) free-standing GaN substrates", Applied physics express, vol. 3, no. 5: IOP Publishing, pp. 052702, 2010.
Young, E. C., F. Wu, A. E. Romanov, A. Tyagi, C. S. Gallinat, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Lattice tilt and misfit dislocations in (1122) semipolar GaN heteroepitaxy", Applied physics express, vol. 3, no. 1: IOP Publishing, pp. 011004, 2010.
Zhong, H., J. F. Kaeding, R. Sharma, J. S. Speck, S. P. DenBaars, and S. Nakamura, Method for growth of semipolar (Al, In, Ga, B) N optoelectronic devices, 2010.
Kaeding, J. F., D-S. Lee, M. Iza, T. J. Baker, H. Sato, B. A. Haskell, J. S. Speck, S. P. DenBaars, S. Nakamura, and others, Method for improved growth of semipolar (Al, In, Ga, B) N, 2010.
Kaeding, J. F., D-S. Lee, M. Iza, T. J. Baker, H. Sato, B. A. Haskell, J. S. Speck, S. P. DenBaars, and S. Nakamura, Method for improved growth of semipolar (al, in, ga, b) n, 2010.
Huang, C-Y., Y-. Da Lin, A. Tyagi, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Optical waveguide simulations for the optimization of InGaN-based green laser diodes", Journal of Applied Physics, vol. 107, no. 2: AIP, pp. 023101, 2010.
Farrell, R. M., M. C. Schmidt, K-C. Kim, H. Masui, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, Optimization of laser bar orientation for nonpolar and semipolar (Ga, Al, In, B) N diode lasers, 2010.
Da Lin, Y-., S. Yamamoto, C-Y. Huang, C-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Photonics, quantum electronics, optics, and spectroscopy 082001 High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes", Applied Physics Express, vol. 3, no. 8, 2010.
Wu, F., Y-. Da Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN", Applied Physics Letters, vol. 96, no. 23: AIP, pp. 231912, 2010.
Baker, T. J., B. A. Haskell, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura, Technique for the growth of planar semi-polar gallium nitride, 2010.
DenBaars, S. P., S. Nakamura, and J. S. Speck, Transparent mirrorless light emitting diode, 2010.
DenBaars, S. P., S. Nakamura, and J. S. Speck, Transparent mirrorless light emitting diode, nov # " 11", 2010.
2009
Da Lin, Y-., A. Chakraborty, S. Brinkley, H. Chih Kuo, T. Melo, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Characterization of blue-green m-plane InGaN light emitting diodes", Applied Physics Letters, vol. 94, no. 26: AIP, pp. 261108, 2009.
Asamizu, H., M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1 12 2) Plane Gallium Nitrides", Applied physics express, vol. 2, no. 2: IOP Publishing, pp. 021002, 2009.
Letts, E. R., J. S. Speck, and S. Nakamura, "Effect of indium on the physical vapor transport growth of AlN", Journal of Crystal Growth, vol. 311, no. 4: Elsevier, pp. 1060–1064, 2009.
Zhong, H., A. Tyagi, N. Pfaff, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Enhancing the light extraction efficiency of blue semipolar (1011) nitride-based light emitting diodes through surface patterning", Japanese Journal of Applied Physics, vol. 48, no. 3R: IOP Publishing, pp. 030201, 2009.
Saito, M., H. Yamada, K. Iso, H. Sato, H. Hirasawa, D. S. Kamber, T. Hashimoto, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Evaluation of GaN substrates grown in supercritical basic ammonia", Applied Physics Letters, vol. 94, no. 5: AIP, pp. 052109, 2009.

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