Publications

Found 21 results
Author Title Type [ Year(Asc)]
Filters: Author is Nakamura, Shuji and First Letter Of Title is A  [Clear All Filters]
2020
SaifAddin, B. K., A. S. Almogbel, C. J. Zollner, F. Wu, B. Bonef, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "AlGaN Deep-Ultraviolet Light-Emitting Diodes Grown on SiC Substrates", ACS Photonics, 2020.
2018
Espenlaub, A. C., A. I. Alhassan, S. Nakamura, C. Weisbuch, and J. S. Speck, "Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes", Applied Physics Letters, vol. 112, no. 14: AIP Publishing, pp. 141106, 2018.
2016
Malkowski, T. F., S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Acidic ammonothermal growth of gallium nitride in a liner-free molybdenum alloy autoclave", Journal of Crystal Growth, vol. 456: North-Holland, pp. 21–26, 2016.
2015
Iza, M., J. S. Speck, S. Nakamura, and S. P. DenBaars, (Al, In, Ga, B) N DEVICE STRUCTURES ON A PATTERNED SUBSTRATE, 2015.
Feezell, D. F., M. C. Schmidt, K-C. Kim, R. M. Farrell, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes, may # " 26", 2015.
Pimputkar, S., J. S. Speck, S. Nakamura, and S-ichiro. Kawabata, Ammonothermal growth of group-III nitride crystals on seeds with at least two surfaces making an acute, right or obtuse angle with each other, 2015.
2014
Hsu, P. Shan, J. J. Weaver, S. P. DenBaars, J. S. Speck S. Speck, and S. Nakamura, (Al, In, B, Ga) N BASED SEMIPOLAR AND NONPOLAR LASER DIODES WITH POLISHED FACETS, 2014.
Da Lin, Y-., H. Ohta, S. Nakamura, S. P. DenBaars, and J. S. Speck, Aluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodes, jun # " 24", 2014.
Ohta, H., F. Wu, A. Tyagi, A. Chakraborty, J. S. Speck, S. P. DenBaars, S. Nakamura, and E. C. Young, Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations, 2014.
Zhao, Y., F. Wu, T-J. Yang, Y-R. Wu, S. Nakamura, and J. S. Speck, "Atomic-scale nanofacet structure in semipolar and InGaN single quantum wells", Applied Physics Express, vol. 7, no. 2: IOP Publishing, pp. 025503, 2014.
2013
Pimputkar, S., P. Von Dollen, S. Nakamura, and J. S. Speck, Apparatus used for the growth of group-iii nitride crystals utilizing carbon fiber containing materials and group-iii nitride grown therewith, 2013.
2012
Feezell, D. F., M. C. Schmidt, K-C. Kim, R. M. Farrell, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes, 2012.
Henry, T. A., A. Armstrong, K. M. Kelchner, S. Nakamura, SP. DenBaars, and JS. Speck, "Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 100, no. 8: AIP, pp. 082103, 2012.
2011
Chung, R. Byung- Kyu, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Abnormal Behavior of MOCVD Grown Al x In 1-x N Observed by Various Material Characterizations", 한국재료학회, vol. 17, 10/2011.
Pimputkar, S., D. S. Kamber, J. S. Speck, and S. Nakamura, Addition of hydrogen and/or nitrogen containing compounds to the nitrogen-containing solvent used during the ammonothermal growth of group-iii nitride crystals, sep # " 1", 2011.
Bryant, B. N., D. S. Kamber, F. Wu, S. Nakamura, and J. S. Speck, "Aluminum nitride grown on lens shaped patterned sapphire by hydride vapor phase epitaxy", physica status solidi (c), vol. 8, no. 5: Wiley Online Library, pp. 1463–1466, 2011.
2008
Hashimoto, T., F. Wu, J. S. Speck, and S. Nakamura, "Ammonothermal growth of bulk GaN", Journal of Crystal Growth, vol. 310, no. 17: Elsevier, pp. 3907–3910, 2008.
2007
Feezell, D. F., M. C. Schmidt, R. M. Farrell, K-C. Kim, M. Saito, K. Fujito, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, "AlGaN-cladding-free nonpolar InGaN/GaN laser diodes", Japanese journal of applied physics, vol. 46, no. 4L: IOP Publishing, pp. L284, 2007.
Hashimoto, T., J. S. Speck, and S. Nakamura, Ammonothermal Growth of Bulk GaN for Extended Time, 2007.
2005
Hashimoto, T., K. Fujito, M. Saito, J. S. Speck, and S. Nakamura, "Ammonothermal growth of GaN on an over-1-inch seed crystal", Japanese journal of applied physics, vol. 44, no. 12L: IOP Publishing, pp. L1570, 2005.
2004
Hashimoto, T., K. Fujito, F. Wu, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura, "Ammonothermal growth of GaN utilizing negative temperature dependence of solubility in basic ammonia", MRS Online Proceedings Library Archive, vol. 831: Cambridge University Press, 2004.