Publications

Found 331 results
Author Title Type [ Year(Asc)]
Filters: Author is DenBaars, Steven P  [Clear All Filters]
1998
Asamizu, H., M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "r here has been significant development of c-plane", MRS Internet J. Nitride Semicond. Res, vol. 3, pp. 15, 1998.
Golan, Y., P. Fini, S. P. DenBaars, and J. S. Speck, "Substrate Reactivity and ìControlled Contaminationî in Metalorganic Chemical Vapor Deposition of GaN on Sapphire", Japanese journal of applied physics, vol. 37, no. 9R: IOP Publishing, pp. 4695, 1998.
1997
DenBaars, S. P., and J. S. Speck, Defect reduction in the growth of group III nitrides, 1997.
Golan, Y., P. Fini, S. P. DenBaars, and J. S. Speck, "Substrate Surface Treatments and Controlled Contamination in GaN/Sapphire MOCVD", MRS Online Proceedings Library Archive, vol. 482: Cambridge University Press, 1997.
1996
Keller, S., D. Kapolnek, B. P. Keller, Y. Wu, B. Heying, J. S. Speck, U. K. Mishra, and S. P. DenBaars, "Effect of the trimethylgallium flow during nucleation layer growth on the properties of GaN grown on sapphire", Japanese journal of applied physics, vol. 35, no. 3A: IOP Publishing, pp. L285, 1996.
1993
Golan, Y., P. Fini, S. P. DenBaars, and J. Speck, "???????: ????∑??∑????∑???????= Inorganic materials 4 (271), 633-641, 1997-11-01", J. Eur. Ceram. Soc, vol. 12, pp. 123, 1993.

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