Publications

Found 673 results
Author Title Type [ Year(Desc)]
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2012
Kim, K. C., M. C. Schmidt, F. Wu, A. Hirai, M. B. McLaurin, S. P. DenBaars, S. Nakamura, and J. S. Speck, CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B) N ON VARIOUS SUBSTRATES, mar # " 22", 2012.
Hardy, M. T., P. Shan Hsu, I. L. Koslow, D. Feezell, S. Nakamura, J. S. Speck, and S. DenBaars, "Demonstration of a Relaxed Waveguide Semipolar (202Ø1) InGaN/GaN Laser Diode", CLEO: Science and Innovations: Optical Society of America, pp. CTu2N–2, 2012.
Hardy, M. T., P. S. Hsu, I. Koslow, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Demonstration of a relaxed waveguide semipolar InGaN/GaN laser diode", Lasers and Electro-Optics (CLEO), 2012 Conference on: IEEE, pp. 1–2, 2012.
Yeluri, R., C. A. Hurni, S. Chowdhury, J. S. Speck, and U. K. Mishra, "Demonstration of Low ON-Resistance CAVETS with Ammonia MBE Grown Active p-GaN Layer as the Current Blocking Layer for High Power Applications", Meeting Abstracts, no. 30: The Electrochemical Society, pp. 2531–2531, 2012.
Holder, C., J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, "Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers", Applied Physics Express, vol. 5, no. 9: IOP Publishing, pp. 092104, 2012.
Toledo, N. G., D. J. Friedman, R. M. Farrell, E. E. Perl, C-T. Lin, J. E. Bowers, J. S. Speck, and U. K. Mishra, "Design of integrated III-nitride/non-III-nitride tandem photovoltaic devices", Journal of Applied Physics, vol. 111, no. 5: AIP, pp. 054503, 2012.
Craven, M. D., S. P. DenBaars, J. S. Speck, and S. Nakamura, Dislocation reduction in non-polar iii-nitride thin films, 2012.
Kaun, S. W., P. G. Burke, M. Hoi Wong, E. C. H. Kyle, U. K. Mishra, and J. S. Speck, "Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures", Applied Physics Letters, vol. 101, no. 26: AIP, pp. 262102, 2012.
Keller, S., J. Lu, U. K. Mishra, S. P. DenBaars, and J. S. Speck, "Effect of indium on the conductivity of poly-crystalline GaN grown on high purity fused silica", physica status solidi (a), vol. 209, no. 3: WILEY-VCH Verlag Berlin, pp. 431–433, 2012.
Hurni, C. A., J. R. Lang, P. G. Burke, and J. S. Speck, "Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy", Applied Physics Letters, vol. 101, no. 10: AIP, pp. 102106, 2012.
Metcalfe, G. D., C. S. Gallinat, H. Shen, M. Wraback, S. Wienecke, E. C. Young, and J. S. Speck, "Effects of strain relaxation on the photoluminescence of semipolar InGaN", Lasers and Electro-Optics (CLEO), 2012 Conference on: IEEE, pp. 1–2, 2012.
Bierwagen, O., T. Nagata, M. E. White, M-Y. Tsai, and J. S. Speck, "Electron transport in semiconducting SnO 2: Intentional bulk donors and acceptors, the interface, and the surface", Journal of Materials Research, vol. 27, no. 17: Cambridge University Press, pp. 2232–2236, 2012.
Bierwagen, I., T. Nagata, M. E. White, M-Y. Tsai, and J. S. Speck, "Electron transport in semiconducting SnO2: Intentional bulk donors and acceptors, the interface, and the surface–CORRIGENDUM", Journal of Materials Research, vol. 27, no. 19: Cambridge University Press, pp. 2578–2578, 2012.
Masui, H., H. Yamada, K. Iso, A. Hirai, M. Saito, J. S. Speck, S. Nakamura, and S. P. DenBaars, Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut, 2012.
Masui, H., H. Yamada, K. Iso, J. S. Speck, S. Nakamura, and S. P. DenBaars, Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporation, 2012.
Fujiwara, T., S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Enhancement-mode m-plane AlGaN/GaN HFETs with regrown n+-GaN contact layer", physica status solidi (c), vol. 9, no. 3-4: Wiley Online Library, pp. 891–893, 2012.
Singisetti, U., M. Hoi Wong, J. S. Speck, and U. K. Mishra, "Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510-mS/mm $ g_ ${$m$}$ $, and 0.66-$$\backslash$Omega$\backslash$cdot$\backslash$hbox ${$mm$}$ $ $ R_ ${$$\backslash$rm on$}$ $", IEEE Electron Device Letters, vol. 33, no. 1: IEEE, pp. 26–28, 2012.
Pimputkar, S., J. S. Speck, and S. Nakamura, Group-iii nitride crystal ammonothermally grown using an initially off-oriented non-polar or semi-polar growth surface of a group-iii nitride seed crystal, 2012.
Dasgupta, S., F. Wu, J. S. Speck, U. K. Mishra, and others, "Growth and Characterization of N-Polar GaN Films on Si (111) by Plasma Assisted Molecular Beam Epitaxy", Japanese Journal of Applied Physics, vol. 51, no. 11R: IOP Publishing, pp. 115503, 2012.
Bierwagen, O., S. Choi, and J. S. Speck, "Hall and Seebeck measurement of a p-n layer stack: Determining InN bulk hole transport properties in the presence of a strong surface electron accumulation layer", Physical Review B, vol. 85, no. 16: APS, pp. 165205, 2012.
Speck, J. S., "Heteroepitaxial Lattice Mismatch Stress Relaxation in Nonpolar and Semipolar GaN by Dislocation Glide", Meeting Abstracts, no. 43: The Electrochemical Society, pp. 3202–3202, 2012.
Zhao, Y., S. Tanaka, C-Y. Huang, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, High indium uptake and high polarization ratio for group-iii nitride optoelectronic devices fabricated on a semipolar (20-2-1) plane of a gallium nitride substrate, 2012.
Speck, J. S., S. P. DenBaars, U. K. Mishra, and S. Nakamura, High Performance InGaN-Based Solar Cells: DTIC Document, 2012.
Pan, C-C., S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, "High-power, low-efficiency-droop semipolar (2021) single-quantum-well blue light-emitting diodes", Applied Physics Express, vol. 5, no. 6: IOP Publishing, pp. 062103, 2012.
Farrell, R. M., C. J. Neufeld, N. G. Toledo, S. P. DenBaars, U. K. Mishra, J. S. Speck, and S. Nakamura, Iii-nitride flip-chip solar cells, jul # " 19", 2012.

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