Publications
Found 16 results
Author Title Type [ Year
] Filters: Author is Speck, JS and First Letter Of Title is T [Clear All Filters]
, "Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes", Applied Physics Letters, vol. 109, no. 6: AIP Publishing, pp. 061109, 2016.
, "Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN", Journal of Applied Physics, vol. 118, no. 15: AIP Publishing, pp. 155701, 2015.
, "Toward a physical understanding of the reliability-limiting E C-0.57 eV trap in GaN HEMTs", Reliability Physics Symposium, 2014 IEEE International: IEEE, pp. 2C–1, 2014.
, "Trap-related delay analysis of self-aligned N-polar GaN/InAlN HEMTs with record extrinsic g m of 1105 mS/mm", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 279–280, 2011.
, "Temperature-dependent Radiative Lifetimes of Excitons in Non-polar GaN/AlGaN Quantum Wells", Semiconductor Device Research Symposium, 2005 International: IEEE, pp. 225–226, 2005.
, "Tunnel junctions in GaN/AlN for optoelectronic applications", Device Research Conference Digest, 2005. DRC'05. 63rd, vol. 1: IEEE, pp. 23–24, 2005.
, "Threading dislocation reduction via laterally overgrown nonpolar (1120) a-plane GaN", Applied Physics Letters, vol. 81, no. 7: AIP, pp. 1201–1203, 2002.
, "Tunable passive integrated circuits using BST thin films", Integrated Ferroelectrics, vol. 49, no. 1: Taylor & Francis, pp. 161–170, 2002.
, Transition between the 1 x 1 and (${$radical$}$ 3 x 2 ${$radical$}$ 3) R30 ${$degree$}$ surface structures of GaN in the vapor-phase environment: Argonne National Laboratory, Argonne, IL (US), 2000.
, "Transition between the 1$\times$ 1 and (3$\times$ 23) R30∞ surface structures of GaN in the vapor-phase environment", Physica B: Condensed Matter, vol. 283, no. 1-3: North-Holland, pp. 217–222, 2000.
, "Transmission electron microscopy studies of defects in HgCdTe device structures grown by molecular beam epitaxy", Journal of Electronic Materials, vol. 29, no. 6: Springer-Verlag, pp. 732–735, 2000.
, "Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers", Applied Physics Letters, vol. 77, no. 24: AIP, pp. 3998–4000, 2000.
, "Threading dislocation reduction in strained layers", Journal of applied physics, vol. 85, no. 1: AIP, pp. 182–192, 1999.
, "Threading dislocation reduction mechanisms in low-temperature-grown GaAs", Journal of applied physics, vol. 86, no. 9: AIP, pp. 4836–4842, 1999.
, "A theoretical model for threading dislocation reduction during selective area growth", Materials Science and Engineering: A, vol. 234: Elsevier, pp. 794–797, 1997.
, "Theory of microstructure and mechanics of the... a 1/a 2/a 1/a 2... domain pattern in epitaxial ferroelectric and ferroelastic films", Journal of applied physics, vol. 79, no. 8: AIP, pp. 4037–4049, 1996.