Publications
Found 25 results
Author Title Type [ Year
] Filters: Author is Speck, JS and First Letter Of Title is O [Clear All Filters]
, "Optical properties of extended and localized states in m-plane InGaN quantum wells", Applied Physics Letters, vol. 102, no. 10: AIP, pp. 101102, 2013.
, "Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers", Applied Physics Letters, vol. 100, no. 11: AIP, pp. 112106, 2012.
, "Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures", Applied Physics Letters, vol. 99, no. 25: AIP, pp. 251909, 2011.
, "Optical anisotropy of A-and M-plane InN grown on free-standing GaN substrates", physica status solidi (a), vol. 207, no. 5: Wiley Online Library, pp. 1062–1065, 2010.
, "Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells", physica status solidi (b), vol. 244, no. 6: Wiley Online Library, pp. 1797–1801, 2007.
, "Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded In Ga N/ Ga N multi-quantum wells", Journal of Applied Physics, vol. 100, no. 5: AIP, pp. 054314, 2006.
, "Optical properties of nonpolar a-plane GaN layers", Superlattices and Microstructures, vol. 40, no. 4-6: Academic Press, pp. 253–261, 2006.
, "Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy", Applied physics letters, vol. 89, no. 7: AIP, pp. 071902, 2006.
, "Optical evidence for lack of polarization in (11 2\= 0) oriented GaN/(AlGa) N quantum structures", Applied Physics Letters, vol. 86, no. 20: AIP, pp. 202104, 2005.
, "Observation of long transients in the electrical characterization of thin film BST capacitors", Integrated Ferroelectrics, vol. 53, no. 1: Taylor & Francis, pp. 503–511, 2003.
, "Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy", Journal of applied physics, vol. 94, no. 12: AIP, pp. 7611–7615, 2003.
, "Observation of crystallographic wing tilt in cantilever epitaxy of GaN on silicon carbide and silicon (111) substrates", Applied Physics Letters, vol. 79, no. 18: AIP, pp. 2907–2909, 2001.
, "Observation of Mg-Rich Precipitates in the p-Type Doping of GaN-Based Laser Diodes", physica status solidi (b), vol. 228, no. 2: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 353–356, 2001.
, "Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes", Applied Physics Letters, vol. 76, no. 21: AIP, pp. 3064–3066, 2000.
, "Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 77, no. 18: AIP, pp. 2885–2887, 2000.
, "Observation of growth modes during metal-organic chemical vapor deposition of GaN", Applied physics letters, vol. 74, no. 22: AIP, pp. 3326–3328, 1999.
, "Optical properties of InGaN quantum wells", Materials Science and Engineering: B, vol. 59, no. 1-3: Elsevier, pp. 298–306, 1999.
, "Optimization of high quality GaN by MBE", Journal of Electronic Materials, vol. 28, no. 7: The Metals, Minerals, and Materials Society, pp. 1065, 1999.
, "Observation of near field modal emission in InGaN multi-quantum well laser diodes by near field scanning optical microscopy", Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International: IEEE, pp. 9–10, 1998.
, "Oxide epitaxial lift-off (OELO)", MRS Online Proceedings Library Archive, vol. 474: Cambridge University Press, 1997.
, "Optical Dielectric Response of Gallium Nitride Studied by Variable Angle Spectroscopic Ellipsometry", MRS Online Proceedings Library Archive, vol. 449: Cambridge University Press, 1996.
, "Order No.: JA608-001\copyright 1996 MRS", MRS BULLETIN, 1996.
, "ORGANIC-INORGANIC INTERFACES IN THE ULTRASTRUCTURE OF RED ABALONE NACRE", ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, vol. 209: AMER CHEMICAL SOC PO BOX 57136, WASHINGTON, DC 20037-0136, pp. 584–INOR, 1995.
, "Observation of arsenic precipitates in GaInAs grown at low temperature on InP", Applied physics letters, vol. 62, no. 18: AIP, pp. 2209–2211, 1993.
, "Observation of impurity effects on the nucleation of arsenic precipitates in GaAs", Applied physics letters, vol. 62, no. 2: AIP, pp. 169–171, 1993.