Publications

Found 107 results
Author Title Type [ Year(Desc)]
Filters: Author is Keller, S  [Clear All Filters]
2013
Liu, X., J. Kim, R. Yeluri, S. Lal, H. Li, J. Lu, S. Keller, B. Mazumder, JS. Speck, and UK. Mishra, "Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition", Journal of Applied Physics, vol. 114, no. 16: AIP, pp. 164507, 2013.
Young, NG., RM. Farrell, YL. Hu, Y. Terao, M. Iza, S. Keller, SP. DenBaars, S. Nakamura, and JS. Speck, "High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates", Applied Physics Letters, vol. 103, no. 17: AIP, pp. 173903, 2013.
Cardwell, DW., A. Sasikumar, AR. Arehart, SW. Kaun, J. Lu, S. Keller, JS. Speck, UK. Mishra, SA. Ringel, and JP. Pelz, "Spatially-resolved spectroscopic measurements of Ec- 0.57 eV traps in AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 102, no. 19: AIP, pp. 193509, 2013.
2014
Young, NG., EE. Perl, RM. Farrell, M. Iza, S. Keller, JE. Bowers, S. Nakamura, SP. DenBaars, and JS. Speck, "High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration", Applied Physics Letters, vol. 104, no. 16: AIP, pp. 163902, 2014.
Liu, X., SH. Chan, F. Wu, Y. Li, S. Keller, JS. Speck, and UK. Mishra, "Metalorganic chemical vapor deposition of Al 2 O 3 using trimethylaluminum and O 2 precursors: Growth mechanism and crystallinity", Journal of Crystal Growth, vol. 408: Elsevier, pp. 78–84, 2014.
Sasikumar, A., DW. Cardwell, AR. Arehart, J. Lu, SW. Kaun, S. Keller, UK. Mishra, JS. Speck, JP. Pelz, and SA. Ringel, "Toward a physical understanding of the reliability-limiting E C-0.57 eV trap in GaN HEMTs", Reliability Physics Symposium, 2014 IEEE International: IEEE, pp. 2C–1, 2014.
2016
Liu, X., CM. Jackson, F. Wu, B. Mazumder, R. Yeluri, J. Kim, S. Keller, AR. Arehart, SA. Ringel, JS. Speck, et al., "Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition", Journal of Applied Physics, vol. 119, no. 1: AIP Publishing, pp. 015303, 2016.

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