Publications

Found 107 results
Author Title Type [ Year(Desc)]
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1995
Keller, BP., S. Keller, D. Kapolnek, WN. Jiang, YF. Wu, H. Masui, X. Wu, B. Heying, JS. Speck, UK. Mishra, et al., "Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN", Journal of electronic materials, vol. 24, no. 11: Springer-Verlag, pp. 1707–1709, 1995.
Kapolnek, D., XH. Wu, B. Heying, S. Keller, BP. Keller, UK. Mishra, SP. DenBaars, and JS. Speck, "Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire", Applied Physics Letters, vol. 67, no. 11: AIP, pp. 1541–1543, 1995.
1996
Sink, RK., S. Keller, BP. Keller, DI. Babić, AL. Holmes, D. Kapolnek, XH. Wu, JS. Speck, SP. DenBaars, and JE. Bowers, "Cleaved facets in GaN by wafer fusion of GaN to InP", MRS Online Proceedings Library Archive, vol. 421: Cambridge University Press, 1996.
Sink, RK., S. Keller, BP. Keller, D. I. Babić, AL. Holmes, D. Kapolnek, SP. DenBaars, JE. Bowers, XH. Wu, and JS. Speck, "Cleaved GaN facets by wafer fusion of GaN to InP", Applied physics letters, vol. 68, no. 15: AIP, pp. 2147–2149, 1996.
Wu, XH., LM. Brown, D. Kapolnek, S. Keller, B. Keller, SP. DenBaars, and JS. Speck, "Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3", Journal of applied physics, vol. 80, no. 6: AIP, pp. 3228–3237, 1996.
Wu, X. H., L. M. Brown, D. Kapolnek, S. Keller, B. Keller, S. DenBaars, and J. Speck, "Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3", Journal of Applied Physics, vol. 80, pp. 3228 - 3237, 10, 1996.
Keller, S., BP. Keller, Y-F. Wu, B. Heying, D. Kapolnek, JS. Speck, UK. Mishra, and SP. DenBaars, "Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 68, no. 11: AIP, pp. 1525–1527, 1996.
Wu, XH., P. Fini, S. Keller, EJ. Tarsa, B. Heying, UK. Mishra, SP. DenBaars, and JS. Speck, "Morphological and structural transitions in GaN films grown on sapphire by metal-organic chemical vapor deposition", Japanese journal of applied physics, vol. 35, no. 12B: IOP Publishing, pp. L1648, 1996.
Wu, XH., D. Kapolnek, EJ. Tarsa, B. Heying, S. Keller, BP. Keller, UK. Mishra, SP. DenBaars, and JS. Speck, "Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN", Applied physics letters, vol. 68, no. 10: AIP, pp. 1371–1373, 1996.
Heying, B., XH. Wu, S. Keller, Y. Li, D. Kapolnek, BP. Keller, S. P. DenBaars, and JS. Speck, "Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films", Applied physics letters, vol. 68, no. 5: AIP, pp. 643–645, 1996.
1997
DenBaars, SP., P. Kozodoy, S. Keller, MP. Mack, A. Abare, X. Wu, JS. Speck, and UK. Mishra, "MOCVD Growth of Group-III Nitrides for High Quality Photonic Devices", OPTOELECTRONICS & COMMUNICATIONS CONFERENCE, vol. 2, pp. 48–49, 1997.
1998
Marchand, H., JP. Ibbetson, P. T. Fini, P. Kozodoy, S. Keller, S. DenBaars, JS. Speck, and UK. Mishra, "Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 3: Cambridge University Press, 1998.
DenBaars, SP., AC. Abare, MP. Mack, M. Hansen, RK. Sink, P. Kozodoy, S. Keller, JS. Speck, JE. Bowers, UK. Mishra, et al., "Blue InGaN MQW laser diodes on sapphire", Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS'98. IEEE, vol. 2: IEEE, pp. 346–347, 1998.
Abare, AC., MP. Mack, M. Hansen, RK. Sink, P. Kozodoy, S. Keller, JS. Speck, JE. Bowers, UK. Mishra, LA. Coldren, et al., "Cleaved and etched facet nitride laser diodes", IEEE Journal of selected topics in quantum electronics, vol. 4, no. 3: IEEE, pp. 505–509, 1998.
Marchand, H., XH. Wu, JP. Ibbetson, PT. Fini, P. Kozodoy, S. Keller, JS. Speck, SP. DenBaars, and UK. Mishra, "CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES-Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 73, no. 6: New York [etc.] American Institute of Physics., pp. 747–749, 1998.
Wu, XH., P. Fini, EJ. Tarsa, B. Heying, S. Keller, UK. Mishra, SP. DenBaars, and JS. Speck, "Dislocation generation in GaN heteroepitaxy", Journal of Crystal Growth, vol. 189: North-Holland, pp. 231–243, 1998.
Fini, P., X. Wu, EJ. Tarsa, Y. Golan, V. Srikant, S. Keller, SP. DenBaars, and JS. Speck, "The effect of growth environment on the morphological and extended defect evolution in GaN grown by metalorganic chemical vapor deposition", Japanese journal of applied physics, vol. 37, no. 8R: IOP Publishing, pp. 4460, 1998.
Kozodoy, P., JP. Ibbetson, H. Marchand, PT. Fini, S. Keller, JS. Speck, SP. DenBaars, and UK. Mishra, "Electrical characterization of GaN pn junctions with and without threading dislocations", Applied physics letters, vol. 73, no. 7: AIP, pp. 975–977, 1998.
Marchand, H., JP. Ibbetson, PT. Fini, XH. Wu, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Fast lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition using a two-step process", MRS Online Proceedings Library Archive, vol. 537: Cambridge University Press, 1998.
Mack, MP., GD. Via, AC. Abare, M. Hansen, PK. Kozodoy, S. Keller, JS. Speck, UK. Mishra, LA. Coldren, and SP. DenBaars, "Improvement of GaN-based laser diode facets by FIB polishing", Electronics Letters, vol. 34, no. 13: IET, pp. 1315–1316, 1998.
Chavarkar, PM., L. Zhao, S. Keller, KA. Black, E. Hu, J. Speck, and U. Mishra, "Lattice Engineering Using Lateral Oxidation of Alas: an Approach to Generate Substrates With New Lattice Constants", MRS Online Proceedings Library Archive, vol. 535: Cambridge University Press, 1998.
Marchand, H., JP. Ibbetson, PT. Fini, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition", Journal of Crystal Growth, vol. 195, no. 1-4: North-Holland, pp. 328–332, 1998.
Speck, JS., H. Marchand, P. Kozodoy, PT. Fini, XH. Wu, JP. Ibbetson, S. Keller, SP. DenBaars, UK. Mishra, and SJ. Rosner, "Microstructure and Electronic Properties of GaN Laterally Overgrown by Metal Organic Chemical Vapor Deposition", Blue Laser and Light Emitting Diodes II: Ohmsha, pp. 37, 1998.
Marchand, H., XH. Wu, JP. Ibbetson, P. T. Fini, P. Kozodoy, S. Keller, JS. Speck, SP. DenBaars, and UK. Mishra, "Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition", Applied physics letters, vol. 73, no. 6: AIP, pp. 747–749, 1998.
Keller, S., F. Cabané, MS. Minsky, X. Hui Wu, MP. Mack, J. S. Speck, E. Hu, LA. Coldren, U. K. Mishra, and S. P. DenBaars, "MOCVD growth and properties of InGaN/GaN multi-quantum wells", Materials Science Forum, vol. 264: Trans Tech Publications, pp. 1157–1160, 1998.

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