Publications
Found 12 results
Author Title Type [ Year
] Filters: Author is Keller, S and First Letter Of Title is S [Clear All Filters]
, "Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire", Applied Physics Letters, vol. 67, no. 11: AIP, pp. 1541–1543, 1995.
, "Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells", Applied Physics Letters, vol. 72, no. 6: AIP, pp. 692–694, 1998.
, "Structure and Mechanical and Thermal Properties of Condensed Matter-The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor", Japanese Journal of Applied Physics-Part 1 Regular Papers and Short Notes, vol. 37, no. 8: Tokyo, Japan: Publication Board, Japanese Journal of Applied Physics, c1982-, pp. 4460–4466, 1998.
, "Strain relaxation of In x Ga 1- x As during lateral oxidation of underlying AlAs layers", Applied physics letters, vol. 75, no. 15: AIP, pp. 2253–2255, 1999.
, "Structural and optical properties of GaN laterally overgrown on Si (111) by metalorganic chemical vapor deposition using an AlN buffer layer", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 4, no. 1: Cambridge University Press, 1999.
, "Structural and optical properties of low-dislocation-density GaN laterally overgrown by metalorganic chemical vapor deposition", COMPOUND SEMICONDUCTORS 1998, no. 162: IOP PUBLISHING LTD DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND, pp. 681–686, 1999.
, "Strain relaxation in InGaAs lattice engineered substrates", Journal of Electronic Materials, vol. 29, no. 7: Springer-Verlag, pp. 944–949, 2000.
, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy", Applied Physics Letters, vol. 76, no. 6: New York [etc.] American Institute of Physics., pp. 718–720, 2000.
, "Si doping effect on strain reduction in compressively strained Al 0.49 Ga 0.51 N thin films", Applied physics letters, vol. 83, no. 4: AIP, pp. 674–676, 2003.
, "Si doping effects on the electrical and structural properties of high Al composition AlxGa1- xN films grown by MOCVD", physica status solidi (c), no. 7: Wiley Online Library, pp. 2010–2013, 2003.
, "Structural and electrical characterization of a-plane GaN grown on a-plane SiC", physica status solidi (c), no. 7: Wiley Online Library, pp. 2132–2135, 2003.
, "Spatially-resolved spectroscopic measurements of Ec- 0.57 eV traps in AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 102, no. 19: AIP, pp. 193509, 2013.