Publications

Found 5 results
Author Title Type [ Year(Desc)]
Filters: Author is Shuji Nakamura and First Letter Of Title is A  [Clear All Filters]
2011
Farrell, R. M., D. A. Haeger, P. Shan Hsu, M. T. Hardy, K. M. Kelchner, K. Fujito, D. F. Feezell, U. K. Mishra, S. P. DenBaars, J. S. Speck, et al., "AlGaN-Cladding-Free m -Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers", Applied Physics Express, vol. 4, pp. 092105, 2011.
2014
Zhao, Y., F. Wu, T. Jui Yang, Y. Renn Wu, S. Nakamura, and J. S. Speck, "Atomic-scale nanofacet structure in semipolar (202̄1̄) and (202̄1) InGaN single quantum wells", Applied Physics Express, vol. 7, 2, 2014.
2020
Gandrothula, S., T. Kamikawa, M. Araki, D. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, "An approach to remove homoepitaxially grown GaN layers by cleavage from the substrate surface", Applied Physics Express, vol. 13, pp. 041003, mar, 2020.
2021
Wong, M. S., D. Melchert, M. Haggmark, D. Myers, C. Lee, S. Grandrothula, M. de Vries, D. Gianola, M. Begley, T. Magarlith, et al., "Acousto-fluidic assembly of III-nitride micro-light-emitting diodes with magnetic alignment", Light-Emitting Devices, Materials, and Applications XXV: International Society for Optics and Photonics, 2021.
2023
Ho, W. Ying, Y. Chao Chow, Z. Biegler, K. Shek Qwah, T. Tak, A. Wissel-Garcia, I. Liu, F. Wu, S. Nakamura, and J. S. Speck, "Atomic layer etching (ALE) of III-nitrides", Applied Physics Letters, vol. 123, issue 6, 2023.