Publications

Found 4 results
Author Title Type [ Year(Asc)]
Filters: Author is Shuji Nakamura and Keyword is light emitting diodes  [Clear All Filters]
2022
Yapparov, R., C. Lynsky, Y. Chao Chow, S. Nakamura, S. P. DenBaars, J. S. Speck, and S. Marcinkevičius, "Engineering of quantum barriers for efficient InGaN quantum well LEDs", Optica Advanced Photonics Congress 2022: Optica Publishing Group, 2022.
2020
Li, H., P. Li, H. Zhang, Y. Chao Chow, M. S. Wong, S. Pinna, J. Klamkin, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Electrically driven, polarized, phosphor-free white semipolar (20-21) InGaN light-emitting diodes grown on semipolar bulk GaN substrate", Opt. Express, vol. 28, pp. 13569–13575, Apr, 2020.
Li, P., H. Zhang, H. Li, M. Iza, Y. Yao, M. S. Wong, N. Palmquist, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition", Opt. Express, vol. 28, pp. 18707–18712, Jun, 2020.
2019
Marcinkevičius, S., R. Yapparov, L. Y. Kuritzky, S. Nakamura, and J. S. Speck, "Impact of Barrier Height on the Interwell Carrier Transport in InGaN/(In)GaN Multiple Quantum Wells", Laser Congress 2019 (ASSL, LAC, LS&C): Optical Society of America, 2019.