Publications

Found 10 results
Author Title Type [ Year(Asc)]
Filters: Author is DenBaars, S. P.  [Clear All Filters]
2025
Wang, M., W. Gong, F. Wu, S. P. DenBaars, S. Nakamura, and J. S. Speck, "10.4% external quantum efficiency 294 nm UV LEDs at 20 A/cm^2 with a fully transparent tunnel junction", Optics Express, vol. 33, pp. 19876–19884, 2025.
Yapparov, R., A. Quevedo, T. Tak, S. Nakamura, S. P. DenBaars, J. S. Speck, and others, "Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs", Applied Physics Letters, vol. 126, 2025.
Wang, M., W. Gong, F. Wu, T. Tak, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Increasing light extraction efficiency for UV LEDs with a low coverage p-GaN hole injection layer", Optics Express, vol. 33, pp. 19391–19398, 2025.
Yapparov, R., M. S. Wong, T. Tak, S. P. DenBaars, J. S. Speck, and S. Marcinkevičius, "Origin of reduced efficiency in GaN-based micro-LEDs studied by scanning near-field optical microscopy", Applied Physics Letters, vol. 126, 2025.
Tak, T., Y. C. Chow, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck, "Unexpected origin of the quantum efficiency reduction in long-wavelength (In,Ga)N light-emitting diodes", Physical Review Applied, vol. 23, pp. 034002, 2025.
2023
Chow, Y. C., C. Lynsky, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck, "Low-efficiency-droop c-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers", Journal of Applied Physics, vol. 133, 04, 2023.
2022
Chow, Y. C., C. Lynsky, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck, "Impact of doped barriers on the recombination coefficients of c-plane InGaN/GaN single quantum well light-emitting diodes", Applied Physics Letters, vol. 121, 11, 2022.
2021
Chow, Y. C., C. Lynsky, F. Wu, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck, "Reduction of efficiency droop in c-plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers", Applied Physics Letters, vol. 119, 11, 2021.
2010
Tyagi, A., R. M. Farrell, K. M. Kelchner, C.-Y. Huang, P. S. Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. A. Cohen, et al., "AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm", Applied Physics Express, vol. 3, pp. 011002, 2010.
2007
Tyagi, A., H. Zhong, N. N. Fellows, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (101̄1̄) Bulk GaN Substrates", Japanese Journal of Applied Physics, vol. 46, pp. L129-L131, 2007.