Publications

Found 5 results
Author Title Type [ Year(Desc)]
Filters: Author is Uždavinys, Tomas K  [Clear All Filters]
2016
Marcinkevičius, S., T. K. Uždavinys, H. M. Foronda, D. A. Cohen, C. Weisbuch, and J. S. Speck, "Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy", Physical Review B, vol. 94, no. 23: American Physical Society, pp. 235205, 2016.
2017
Marcinkevičius, S., T. K. Uždavinys, H. M. Foronda, D. E. Cohen, J. S. Speck, and C. Weisbuch, "Evaluation of intervalley energy of GaN conduction band by ultrafast pump-probe spectroscopy (Conference Presentation)", Gallium Nitride Materials and Devices XII, vol. 10104: International Society for Optics and Photonics, pp. 101040L, 2017.
Uždavinys, T. K., D. L. Becerra, R. Ivanov, S. P. DenBaars, S. Nakamura, J. S. Speck, and S. Marcinkevičius, "Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time-and spatially-resolved near-field photoluminescence", Optical Materials Express, vol. 7, no. 9: Optical Society of America, pp. 3116–3123, 2017.
Ivanov, R., S. Marcinkevičius, T. K. Uždavinys, L. Y. Kuritzky, S. Nakamura, and J. S. Speck, "Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells", Applied Physics Letters, vol. 110, no. 3: AIP Publishing, pp. 031109, 2017.
2018
Uždavinys, T. K., D. L. Becerra, M. D. Mensi, R. Ivanov, S. Nakamura, S. P. DenBaars, J. S. Speck, and S. Marcinkevičius, "Impact of alloy composition and well width fluctuations on linewidth broadening and carrier lifetimes in semipolar InGaN quantum wells (Conference Presentation)", Gallium Nitride Materials and Devices XIII, vol. 10532: International Society for Optics and Photonics, pp. 105320P, 2018.