Publications

Found 2 results
Author Title Type [ Year(Desc)]
Filters: Author is Huault, Thomas  [Clear All Filters]
2014
Okumura, H., B. M. McSkimming, T. Huault, C. Chaix, and J. S. Speck, "Growth diagram of N-face GaN (000 1) grown at high rate by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 104, no. 1: AIP, pp. 012111, 2014.
McSkimming, B. M., F. Wu, T. Huault, C. Chaix, and J. S. Speck, "Plasma assisted molecular beam epitaxy of GaN with growth rates> 2.6 μm/h", Journal of Crystal Growth, vol. 386: Elsevier, pp. 168–174, 2014.