Publications

Found 5 results
Author Title Type [ Year(Desc)]
Filters: Author is Zhao, Y  [Clear All Filters]
2013
Marcinkevičius, S., Y. Zhao, KM. Kelchner, S. Nakamura, SP. DenBaars, and JS. Speck, "Near-field investigation of spatial variations of (20 2\= 1\=) InGaN quantum well emission spectra", Applied Physics Letters, vol. 103, no. 13: AIP, pp. 131116, 2013.
2014
Marcinkevičius, S., K. Gelžinyt\.e, Y. Zhao, S. Nakamura, SP. DenBaars, and JS. Speck, "Carrier redistribution between different potential sites in semipolar (20 2\= 1) InGaN quantum wells studied by near-field photoluminescence", Applied Physics Letters, vol. 105, no. 11: AIP Publishing, pp. 111108, 2014.
Marcinkevičius, S., R. Ivanov, Y. Zhao, S. Nakamura, SP. DenBaars, and JS. Speck, "Highly polarized photoluminescence and its dynamics in semipolar (20 2\= 1\=) InGaN/GaN quantum well", Applied Physics Letters, vol. 104, no. 11: AIP, pp. 111113, 2014.
2015
Gelžinyt\.e, K., R. Ivanov, S. Marcinkevičius, Y. Zhao, DL. Becerra, S. Nakamura, SP. DenBaars, and JS. Speck, "High spatial uniformity of photoluminescence spectra in semipolar (20 2 1) plane InGaN/GaN quantum wells", Journal of Applied Physics, vol. 117, no. 2: AIP Publishing, pp. 023111, 2015.
Ivanov, R., S. Marcinkevičius, Y. Zhao, DL. Becerra, S. Nakamura, SP. DenBaars, and JS. Speck, "Impact of carrier localization on radiative recombination times in semipolar (20 2\= 1) plane InGaN/GaN quantum wells", Applied Physics Letters, vol. 107, no. 21: AIP Publishing, pp. 211109, 2015.