Publications

Found 6 results
Author Title Type [ Year(Desc)]
Filters: Author is Zhang, En Xia  [Clear All Filters]
2011
Roy, T., Y. S. Puzyrev, E. Xia Zhang, S. DasGupta, S. A. Francis, D. M. Fleetwood, R. D. Schrimpf, U. K. Mishra, J. S. Speck, and S. T. Pantelides, "1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions", Microelectronics Reliability, vol. 51, no. 2: Pergamon, pp. 212–216, 2011.
2013
Chen, J., Y. S. Puzyrev, C. Xuan Zhang, E. Xia Zhang, M. W. McCurdy, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, S. W. Kaun, E. C. H. Kyle, et al., "Proton-induced dehydrogenation of defects in AlGaN/GaN HEMTs", IEEE Transactions on Nuclear Science, vol. 60, no. 6: IEEE, pp. 4080–4086, 2013.
2014
Chen, J., E. Xia Zhang, C. Xuan Zhang, M. W. McCurdy, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, and J. S. Speck, "RF performance of proton-irradiated AlGaN/GaN HEMTs", IEEE Transactions on Nuclear Science, vol. 61, no. 6: IEEE, pp. 2959–2964, 2014.
2016
Chen, J., Y. S. Puzyrev, E. Xia Zhang, D. M. Fleetwood, R. D. Schrimpf, A. R. Arehart, S. A. Ringel, S. W. Kaun, E. C. H. Kyle, J. S. Speck, et al., "High-field stress, low-frequency noise, and long-term reliability of AlGaN/GaN HEMTs", IEEE Transactions on Device and Materials Reliability, vol. 16, no. 3: IEEE, pp. 282–289, 2016.
Jiang, R., E. Xia Zhang, X. Shen, J. Chen, K. Ni, P. Wang, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, et al., "Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs", Radiation and Its Effects on Components and Systems (RADECS), 2016 16th European Conference on: IEEE, pp. 1–4, 2016.
2017
Jiang, R., E. Xia Zhang, M. W. McCurdy, J. Chen, X. Shen, P. Wang, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, et al., "Worst-case bias for proton and 10-keV X-ray irradiation of AlGaN/GaN HEMTs", IEEE Transactions on Nuclear Science, vol. 64, no. 1: IEEE, pp. 218–225, 2017.