Publications

Found 3 results
Author Title Type [ Year(Asc)]
Filters: Author is Yu, Haijiang  [Clear All Filters]
2005
Yu, H., L. McCarthy, S. Rajan, S. Keller, S. DenBaars, J. Speck, and U. Mishra, "Ion implanted AlGaN-GaN HEMTs with nonalloyed ohmic contacts", IEEE electron device letters, vol. 26, no. 5: IEEE, pp. 283–285, 2005.
Yu, H., L. McCarthy, H. Xing, P. Waltereit, L. Shen, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Publisherís Note:ìDopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealingî[Appl. Phys. Lett. 85, 5254 (2004)]", Applied Physics Letters, vol. 86, no. 5: AIP, pp. 5254, 2005.
2004
Yu, H., L. McCarthy, H. Xing, P. Waltereit, L. Shen, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing", Applied physics letters, vol. 85, no. 22: AIP, pp. 5254–5256, 2004.