Publications

Found 7 results
Author Title Type [ Year(Asc)]
Filters: Author is Tuomisto, Filip  [Clear All Filters]
2014
Korhonen, E., F. Tuomisto, O. Bierwagen, JS. Speck, and Z. Galazka, "Compensating vacancy defects in Sn-and Mg-doped In 2 O 3", Physical Review B, vol. 90, no. 24: American Physical Society, pp. 245307, 2014.
Linez, F., M. Ritt, C. Rauch, L. Kilanski, S. Choi, J. Räisänen, JS. Speck, and F. Tuomisto, "He implantation induced defects in InN", Journal of Physics: Conference Series, vol. 505, no. 1: IOP Publishing, pp. 012012, 2014.
Prozheeva, V., F. Tuomisto, G. Koblmüller, J. S. Speck, A. Knübel, and R. Aidam, "Vacancy defect formation in PA-MBE grown C-doped InN", physica status solidi (c), vol. 11, no. 3-4: Wiley Online Library, pp. 530–532, 2014.
2010
Reurings, F., F. Tuomisto, C. S. Gallinat, G. Koblmüller, and J. S. Speck, "In vacancies in InN grown by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 97, no. 25: AIP, pp. 251907, 2010.
Koblmüller, G., F. Reurings, F. Tuomisto, and JS. Speck, "Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature", Applied Physics Letters, vol. 97, no. 19: AIP, pp. 191915, 2010.
Rauch, C., F. Reurings, F. Tuomisto, TD. Veal, C. F. McConville, H. Lu, WJ. Schaff, CS. Gallinat, G. Koblmüller, JS. Speck, et al., "In-vacancies in Si-doped InN", physica status solidi (a), vol. 207, no. 5: WILEY-VCH Verlag, pp. 1083–1086, 2010.
2009
Reurings, F., F. Tuomisto, C. S. Gallinat, G. Koblmüller, and J. S. Speck, "Vacancy defects probed with positron annihilation spectroscopy in In-polar InN grown by plasma-assisted molecular beam epitaxy: Effects of growth conditions", physica status solidi (c), vol. 6, no. S2: WILEY-VCH Verlag, 2009.