Publications
Found 3 results
Author Title Type [ Year
] Filters: Author is Tuomisto, Filip and First Letter Of Title is I [Clear All Filters]
, "In vacancies in InN grown by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 97, no. 25: AIP, pp. 251907, 2010.
, "Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature", Applied Physics Letters, vol. 97, no. 19: AIP, pp. 191915, 2010.
, "In-vacancies in Si-doped InN", physica status solidi (a), vol. 207, no. 5: WILEY-VCH Verlag, pp. 1083–1086, 2010.