Publications

Found 4 results
Author Title Type [ Year(Asc)]
Filters: Author is Ahmadi, Elaheh and First Letter Of Title is G  [Clear All Filters]
2017
Ahmadi, E., O. S. Koksaldi, S. W. Kaun, Y. Oshima, D. B. Short, U. K. Mishra, and J. S. Speck, "Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy", Applied Physics Express, vol. 10, no. 4: IOP Publishing, pp. 041102, 2017.
Moser, N., J. McCandless, A. Crespo, K. Leedy, A. Green, A. Neal, S. Mou, E. Ahmadi, J. Speck, K. Chabak, et al., "Ge-Doped $${$$\backslash$beta$}$ $-Ga2O3 MOSFETs", IEEE Electron Device Letters, vol. 38, no. 6: IEEE, pp. 775–778, 2017.
Oshima, Y., E. Ahmadi, S. Kaun, F. Wu, and J. S. Speck, "Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy", Semiconductor Science and Technology, vol. 33, no. 1: IOP Publishing, pp. 015013, 2017.
2014
Kaun, S. W., E. Ahmadi, B. Mazumder, F. Wu, E. C. H. Kyle, P. G. Burke, U. K. Mishra, and J. S. Speck, "GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy", Semiconductor Science and Technology, vol. 29, no. 4: IOP Publishing, pp. 045011, 2014.