Publications

Found 11 results
Author Title Type [ Year(Asc)]
Filters: Author is Hurni, Christophe A  [Clear All Filters]
2015
Yeluri, R., J. Lu, C. A. Hurni, D. A. Browne, S. Chowdhury, S. Keller, J. S. Speck, and U. K. Mishra, "Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction", Applied Physics Letters, vol. 106, no. 18: AIP Publishing, pp. 183502, 2015.
2014
Yeluri, R., J. Lu, D. Browne, C. A. Hurni, S. Chowdhury, S. Keller, J. S. Speck, and U. K. Mishra, "Low ON-resistance and high current GaN vertical electron transistors with buried p-GaN layers", Device Research Conference (DRC), 2014 72nd Annual: IEEE, pp. 253–254, 2014.
Hurni, C. A., H. Kroemer, U. K. Mishra, and J. S. Speck, "m-plane (10 1\= 0) and (20 2\= 1) GaN/AlxGa1–xN conduction band offsets measured by capacitance-voltage profiling", Applied Physics Letters, vol. 105, no. 23: AIP Publishing, pp. 232108, 2014.
2012
Raman, A., C. A. Hurni, J. S. Speck, and U. K. Mishra, "AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxy", physica status solidi (a), vol. 209, no. 1: Wiley Online Library, pp. 216–220, 2012.
Hurni, C. A., H. Kroemer, U. K. Mishra, and J. S. Speck, "Capacitance-voltage profiling on polar III-nitride heterostructures", Journal of Applied Physics, vol. 112, no. 8: AIP, pp. 083704, 2012.
Hurni, C. A., S. Choi, O. Bierwagen, and J. S. Speck, "Coupling resistance between n-type surface accumulation layer and p-type bulk in InN: Mg thin films", Applied Physics Letters, vol. 100, no. 8: AIP, pp. 082106, 2012.
Yeluri, R., C. A. Hurni, S. Chowdhury, J. S. Speck, and U. K. Mishra, "Demonstration of Low ON-Resistance CAVETS with Ammonia MBE Grown Active p-GaN Layer as the Current Blocking Layer for High Power Applications", Meeting Abstracts, no. 30: The Electrochemical Society, pp. 2531–2531, 2012.
Hurni, C. A., J. R. Lang, P. G. Burke, and J. S. Speck, "Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy", Applied Physics Letters, vol. 101, no. 10: AIP, pp. 102106, 2012.
Browne, D. A., E. C. Young, J. R. Lang, C. A. Hurni, and J. S. Speck, "Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 30, no. 4: AVS, pp. 041513, 2012.
Wong, M. Hoi, F. Wu, C. A. Hurni, S. Choi, J. S. Speck, and U. K. Mishra, "Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source", Applied Physics Letters, vol. 100, no. 7: AIP, pp. 072107, 2012.
2010
Hurni, C. A., O. Bierwagen, J. R. Lang, B. M. McSkimming, C. S. Gallinat, E. C. Young, D. A. Browne, U. K. Mishra, and J. S. Speck, "pn junctions on Ga-face GaN grown by NH 3 molecular beam epitaxy with low ideality factors and low reverse currents", Applied Physics Letters, vol. 97, no. 22: AIP, pp. 222113, 2010.