Publications

Found 7 results
Author Title Type [ Year(Asc)]
Filters: Author is Green, DS  [Clear All Filters]
2006
Zhou, X., ET. Yu, DS. Green, and JS. Speck, "Dependence of local electronic structure in p-type GaN on crystal polarity and presence of inversion domain boundaries", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 24, no. 1: AVS, pp. 245–249, 2006.
Armstrong, A., C. Poblenz, DS. Green, UK. Mishra, JS. Speck, and SA. Ringel, "Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy", Applied physics letters, vol. 88, no. 8: AIP, pp. 082114, 2006.
2003
Green, DS., E. Haus, F. Wu, L. Chen, UK. Mishra, and JS. Speck, "Polarity control during molecular beam epitaxy growth of Mg-doped GaN", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 21, no. 4: AVS, pp. 1804–1811, 2003.
2001
Xing, H., DS. Green, L. McCarthy, IP. Smorchkova, P. Chavarkar, T. Mates, S. Keller, S. DenBaars, J. Speck, and U. K. Mishra, "Progress in gallium nitride-based bipolar transistors", Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001: IEEE, pp. 125–130, 2001.
2000
Green, DS., S. Heikman, B. Heying, PR. Tavernier, JS. Speck, DR. Clarke, SP. Den Baars, and UK. Mishra, "Molecular beam epitaxy of InGaN/GaN heterostructures for green luminescence", Compound Semiconductors, 2000 IEEE International Symposium on: IEEE, pp. 371–376, 2000.