Publications

Found 26 results
Author Title Type [ Year(Desc)]
Filters: Author is Hsu, Po Shan  [Clear All Filters]
2009
Tyagi, A., R. M. Farrell, K. M. Kelchner, C-Y. Huang, P. Shan Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. A. Cohen, et al., "AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm", Applied Physics Express, vol. 3, no. 1: IOP Publishing, pp. 011002, 2009.
Da Lin, Y-., M. T. Hardy, P. Shan Hsu, K. M. Kelchner, C-Y. Huang, D. A. Haeger, R. M. Farrell, K. Fujito, A. Chakraborty, H. Ohta, et al., "Blue-green InGaN/GaN laser diodes on miscut m-plane GaN substrate", Applied physics express, vol. 2, no. 8: IOP Publishing, pp. 082102, 2009.
Hardy, M. T., K. M. Kelchner, Y-. Da Lin, P. Shan Hsu, K. Fujito, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, "m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching", Applied Physics Express, vol. 2, no. 12: IOP Publishing, pp. 121004, 2009.
Da Lin, Y-., C-Y. Huang, M. T. Hardy, P. Shan Hsu, K. Fujito, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "m-plane pure blue laser diodes with p-GaN", Applied physics letters, vol. 95, no. 8: American Institute of Physics, 2009.
Da Lin, Y-., C-Y. Huang, M. T. Hardy, P. Shan Hsu, K. Fujito, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "m-plane pure blue laser diodes with p-GaN/n-AlGaN-based asymmetric cladding and InGaN-based wave-guiding layers", Applied Physics Letters, vol. 95, no. 8: AIP, pp. 081110, 2009.
Kelchner, K. M., Y-. Da Lin, M. T. Hardy, C. Yen Huang, P. Shan Hsu, R. M. Farrell, D. A. Haeger, H. Chih Kuo, F. Wu, K. Fujito, et al., "Nonpolar AlGaN-cladding-free blue laser diodes with InGaN waveguiding", Applied physics express, vol. 2, no. 7: IOP Publishing, pp. 071003, 2009.
2010
Kelchner, K. M., R. M. Farrell, Y-. Da Lin, P. Shan Hsu, M. T. Hardy, F. Wu, D. A. Cohen, H. Ohta, J. S. Speck, S. Nakamura, et al., "Continuous-wave operation of pure blue AlGaN-cladding-free nonpolar InGaN/GaN laser diodes", Applied Physics Express, vol. 3, no. 9: IOP Publishing, pp. 092103, 2010.
Hsu, P. Shan, K. M. Kelchner, A. Tyagi, R. M. Farrell, D. A. Haeger, K. Fujito, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, "InGaN/GaN blue laser diode grown on semipolar (3031) free-standing GaN substrates", Applied physics express, vol. 3, no. 5: IOP Publishing, pp. 052702, 2010.
Huang, C-Y., A. Tyagi, Y-. Da Lin, M. T. Hardy, P. Shan Hsu, K. Fujito, J-S. Ha, H. Ohta, J. S. Speck, S. P. DenBaars, et al., "Propagation of spontaneous emission in birefringent m-axis oriented semipolar (1122)(Al, In, Ga) N waveguide structures", Japanese Journal of Applied Physics, vol. 49, no. 1R: IOP Publishing, pp. 010207, 2010.
2011
Farrell, R. M., D. A. Haeger, P. Shan Hsu, M. T. Hardy, K. M. Kelchner, K. Fujito, D. F. Feezell, U. K. Mishra, S. P. DenBaars, J. S. Speck, et al., "AlGaN-cladding-free m-plane InGaN/GaN laser diodes with p-type AlGaN etch stop layers", Applied physics express, vol. 4, no. 9: IOP Publishing, pp. 092105, 2011.
Hsu, P. Shan, J. Sonoda, K. M. Kelchner, A. Tyagi, R. M. Farrell, D. A. Haeger, E. C. Young, A. E. Romanov, K. Fujito, H. Ohta, et al., "Blue InGaN/GaN laser diodes grown on (33$$\backslash$bar 3$\backslash$bar 1$) free-standing GaN substrates", physica status solidi (c), vol. 8, no. 7-8: WILEY-VCH Verlag, pp. 2390–2392, 2011.
Hsu, P. Shan, E. Young, A. Romanov, K. Fujito, J. Speck, and S. Nakamura, "Misfit Dislocation Formation in Partially Strain-Relaxed(11-22) Semipolar InGaN", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Hsu, P. Shan, E. C. Young, A. E. Romanov, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Misfit dislocation formation via pre-existing threading dislocation glide in (11 2\= 2) semipolar heteroepitaxy", Applied Physics Letters, vol. 99, no. 8: AIP, pp. 081912, 2011.
Haeger, D. A., C. Holder, R. M. Farrell, P. Shan Hsu, K. M. Kelchner, K. Fujito, D. A. Cohen, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Near UV AlGaN-cladding free nonpolar InGaN/GaN laser diodes", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 261–262, 2011.
Hardy, M., F. Wu, P. Shan Hsu, I. Koslow, E. Young, J. Speck, and S. DenBaars, "Observation of m-Plane Slip and Relaxation Orthogonal to the Projected c-Direction in(20-21) InGaN/GaN Partially Relaxed Layers", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Tyagi, A., R. M. Farrell, C-Y. Huang, P. Shan Hsu, D. A. Haeger, K. M. Kelchner, H. Ohta, S. Nakamura, S. P. DenBaars, and J. S. Speck, Semipolar iii-nitride laser diodes with etched mirrors, 2011.
Farrell, R. M., D. A. Haeger, P. Shan Hsu, U. K. Mishra, S. P. DenBaars, J. S. Speck, and S. Nakamura, STRUCTURE AND METHOD FOR ACHIEVING SELECTIVE ETCHING IN (Ga, Al, In, B) N LASER DIODES, 2011.
2012
Hardy, M. T., P. Shan Hsu, I. L. Koslow, D. Feezell, S. Nakamura, J. S. Speck, and S. DenBaars, "Demonstration of a Relaxed Waveguide Semipolar (202Ø1) InGaN/GaN Laser Diode", CLEO: Science and Innovations: Optical Society of America, pp. CTu2N–2, 2012.
Hardy, M. T., P. Shan Hsu, F. Wu, I. L. Koslow, E. C. Young, S. Nakamura, A. E. Romanov, S. P. DenBaars, and J. S. Speck, "Trace analysis of non-basal plane misfit stress relaxation in (20 2\= 1) and (30 3\= 1\=) semipolar InGaN/GaN heterostructures", Applied Physics Letters, vol. 100, no. 20: AIP, pp. 202103, 2012.
2013
Hsu, P. Shan, R. M. Farrell, J. J. Weaver, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Comparison of Polished and Dry Etched Semipolar $(11$\backslash$bar ${$2$}$ 2) $ III-Nitride Laser Facets", IEEE Photonics Technology Letters, vol. 25, no. 21: IEEE, pp. 2105–2107, 2013.
Hardy, M. T., P. Shan Hsu, S. P. DenBaars, J. Stephen Speck, and S. Nakamura, Hole blocking layer for the prevention of hole overflow and non-radiative recombination at defects outside the active region, apr # " 25", 2013.
Metcalfe, G., N. Woodward, H. Shen, M. Wraback, P. Shan Hsu, and J. Speck, "Photoreflectance and Strain Relaxation Studies of Semipolar InGaN", APS Meeting Abstracts, 2013.
2014
Hsu, P. Shan, J. J. Weaver, S. P. DenBaars, J. S. Speck S. Speck, and S. Nakamura, (Al, In, B, Ga) N BASED SEMIPOLAR AND NONPOLAR LASER DIODES WITH POLISHED FACETS, 2014.
Koslow, I. L., M. T. Hardy, P. Shan Hsu, F. Wu, A. E. Romanov, E. C. Young, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Onset of plastic relaxation in semipolar (112\= 2) InxGa1- xN/GaN heterostructures", Journal of Crystal Growth, vol. 388: North-Holland, pp. 48–53, 2014.
Hardy, M. T., P. Shan Hsu, S. P. DenBaars, J. S. Speck, and S. Nakamura, Suppression of inclined defect formation and increase in critical thickness by silicon doping on non-c-plane (Al, Ga, In) N, 2014.

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