Publications

Found 11 results
Author Title Type [ Year(Asc)]
Filters: Author is Mathis, SK  [Clear All Filters]
2001
Mathis, SK., KHA. Lau, AM. Andrews, EM. Hall, G. Almuneau, EL. Hu, and JS. Speck, "Lateral oxidation kinetics of AlAsSb and related alloys lattice matched to InP", Journal of Applied Physics, vol. 89, no. 4: AIP, pp. 2458–2464, 2001.
Mathis, SK., AE. Romanov, LF. Chen, GE. Beltz, W. Pompe, and JS. Speck, "Modeling of threading dislocation reduction in growing GaN layers", Journal of crystal growth, vol. 231, no. 3: North-Holland, pp. 371–390, 2001.
2000
Chavarkar, P., UK. Mishra, SK. Mathis, and JS. Speck, "Effect of Sb composition on lateral oxidation rates in AlAs 1- x Sb x", Applied Physics Letters, vol. 76, no. 10: AIP, pp. 1291–1293, 2000.
Mathis, SK., AE. Romanov, LF. Chen, GE. Beltz, W. Pompe, and JS. Speck, "Modeling of threading dislocation reduction in growing GaN layers", Physica Status Solidi A Applied Research, vol. 179, no. 1: ACADEMIC VERLAG GMBH, pp. 125–146, 2000.
Mathis, SK., P. Chavarkar, AM. Andrews, UK. Mishra, and JS. Speck, "Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces-Interface Strain Effects and Atomic Level Characterization-Strain relaxation of InGaAs by lateral", Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur, vol. 18, no. 4: Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-, pp. 2066–2071, 2000.
Mathis, SK., P. Chavarkar, AM. Andrews, UK. Mishra, and JS. Speck, "Reactive removal of misfit dislocations from InGaAs on GaAs by lateral oxidation", Applied Physics Letters, vol. 77, no. 6: AIP, pp. 845–847, 2000.
Chavarkar, P., SK. Mathis, L. Zhao, S. Keller, JS. Speck, and UK. Mishra, "Strain relaxation in InGaAs lattice engineered substrates", Journal of Electronic Materials, vol. 29, no. 7: Springer-Verlag, pp. 944–949, 2000.
Mathis, SK., P. Chavarkar, AM. Andrews, UK. Mishra, and JS. Speck, "Strain relaxation of InGaAs by lateral oxidation of AlAs", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 18, no. 4: AVS, pp. 2066–2071, 2000.
Mathis, SK., P. Chavarkar, AM. Andrews, UK. Mishra, and JS. Speck, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-Reactive removal of misfit dislocations from InGaAs on GaAs by lateral oxidation", Applied Physics Letters, vol. 77, no. 6: New York [etc.] American Institute of Physics., pp. 845–847, 2000.
1999
Mathis, SK., XH. Wu, AE. Romanov, and JS. Speck, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)-Threading dislocation reduction mechanisms in low-temperature-grown GaAs", Journal of Applied Physics, vol. 86, no. 9: New York, NY: American Institute of Physics, c1937-, pp. 4836–4842, 1999.
Mathis, SK., X-H. Wu, AE. Romanov, and JS. Speck, "Threading dislocation reduction mechanisms in low-temperature-grown GaAs", Journal of applied physics, vol. 86, no. 9: AIP, pp. 4836–4842, 1999.