Publications

Found 6 results
Author Title Type [ Year(Desc)]
Filters: Author is Hierro, A  [Clear All Filters]
2000
Hierro, A., SA. Ringel, M. Hansen, JS. Speck, UK. Mishra, and SP. DenBaars, "Hydrogen passivation of deep levels in n–GaN", Applied Physics Letters, vol. 77, no. 10: AIP, pp. 1499–1501, 2000.
Hierro, A., D. Kwon, SA. Ringel, M. Hansen, JS. Speck, UK. Mishra, and SP. DenBaars, "Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes", Applied Physics Letters, vol. 76, no. 21: AIP, pp. 3064–3066, 2000.
2001
Hierro, A., AR. Arehart, B. Heying, M. Hansen, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Capture Kinetics of Electron Traps in MBE-Grown n-GaN", physica status solidi (b), vol. 228, no. 1: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 309–313, 2001.
Hierro, A., M. Hansen, L. Zhao, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Carrier Trapping and Recombination at Point Defects and Dislocations in MOCVD n-GaN", physica status solidi (b), vol. 228, no. 3: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 937–946, 2001.
Hierro, A., AR. Arehart, B. Heying, M. Hansen, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 1)-Point defects and impurities in GaN-Capture Kinetics", Physica Status Solidi-B-Basic Research, vol. 228, no. 1: Berlin: Akademie-Verlag, 1971-, pp. 309–314, 2001.
2002
Hierro, A., AR. Arehart, B. Heying, M. Hansen, UK. Mishra, SP. DenBaars, JS. Speck, and SA. Ringel, "Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy", Applied physics letters, vol. 80, no. 5: AIP, pp. 805–807, 2002.