Publications
Found 2 results
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Filters: Author is Wong, Man Hoi and First Letter Of Title is D [Clear All Filters]
"Device physics-024101 Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors", Applied Physics Express, vol. 4, no. 2, 2011.
, "Direct Correlation between EC-0. 57 eV Trap Generation and Field-Induced Degradation in AlGaN/GaN High Electron Mobility Transistors", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
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