Publications
Found 215 results
Author Title Type [ Year
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, "THz generation from InN films based on interference between optical rectification and photocurrent surge", Conference on Lasers and Electro-Optics: Optical Society of America, pp. CTuG5, 2009.
, "THz generation from InN films based on interference between optical rectification and photocurrent surge", Conference on Lasers and Electro-Optics: Optical Society of America, pp. CTuG5, 2009.
, "THz generation from InN films due to destructive interference between optical rectification and photocurrent surge", Semiconductor Science and Technology, vol. 25, no. 1: IOP Publishing, pp. 015004, 2009.
, "THz generation from InN films due to destructive interference between optical rectification and photocurrent surge", Semiconductor Science and Technology, vol. 25, no. 1: IOP Publishing, pp. 015004, 2009.
, "Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well", Applied Physics Letters, vol. 95, no. 3: AIP, pp. 033503, 2009.
, "Improved quality nonpolar a-plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO)", physica status solidi (a), vol. 205, no. 7: WILEY-VCH Verlag, pp. 1705–1712, 2008.
, "InGaN/GaN laser diodes on semipolar (10$$\backslash$bar 1$ $$\backslash$bar 1$) bulk GaN substrates", physica status solidi (c), vol. 5, no. 6: WILEY-VCH Verlag, pp. 2108–2110, 2008.
, "Piezoelectric Field in Semi-Polar InGaN/GaN Quantum Wells H. Shen, GA Garrett, and M. Wraback US Army Research Laboratory 2800 Powder Mill Road, Adelphi, MD 20783", Phys. Lett, vol. 92, pp. 221110, 2008.
, "Demonstration of high power blue-green light emitting diode on semipolar (1122) bulk GaN substrate", Electronics Letters, vol. 43, no. 15: IET Digital Library, pp. 825–827, 2007.
, "High brightness violet InGaN/GaN light emitting diodes on semipolar (1011) bulk GaN substrates", Japanese Journal of Applied Physics, vol. 46, no. 2L: IOP Publishing, pp. L129, 2007.
, "High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (101̄1̄) Bulk GaN Substrates", Japanese Journal of Applied Physics, vol. 46, pp. L129-L131, 2007.
, "High power and high efficiency blue light emitting diode on freestanding semipolar (10 1 1) bulk GaN substrate", Applied physics letters, vol. 90, no. 23: AIP, pp. 233504, 2007.
, "High power and high efficiency green light emitting diode on free-standing semipolar (112̅2) bulk GaN substrate", physica status solidi (RRL)-Rapid Research Letters, vol. 1, no. 4: WILEY-VCH Verlag, pp. 162–164, 2007.
, "Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs", LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings, Oct, 2007.
, "Semipolar (1011) InGaN", Japanese journal of applied physics, vol. 46, no. 17-19: Japanese journal of applied physics, 2007.
, "Semipolar (1011) InGaN/GaN laser diodes on bulk GaN substrates", Japanese Journal of Applied Physics, vol. 46, no. 5L: IOP Publishing, pp. L444, 2007.
, "Dependence of local electronic structure in p-type GaN on crystal polarity and presence of inversion domain boundaries", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 24, no. 1: AVS, pp. 245–249, 2006.
, "LASERS, OPTICS, AND OPTOELECTRONICS", Appl. Phys. Lett, vol. 87, no. 23, pp. 234101, 2005.
, "Analysis of interface electronic structure in In x Ga 1- x N/GaN heterostructures", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 22, no. 4: AVS, pp. 2169–2174, 2004.
, "Measurement of polarization charge and conduction-band offset at In x Ga 1- x N/GaN heterojunction interfaces", Applied physics letters, vol. 84, no. 23: AIP, pp. 4644–4646, 2004.
, "Papers from the 31st Conference on the Physics and Chemistry of Semiconductor Interfaces-GaN and Related Materials-Analysis of interface electronic structure in InxGa1-xN/GaN heterostructures", Journal of Vacuum Science and Technology-Section B, vol. 22, no. 4: Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-, pp. 2169–2174, 2004.
, "Defect Structure of Mg-Doped GaN Nanowires", Microscopy and Microanalysis, vol. 9, no. S02: Cambridge University Press, pp. 344–345, 2003.
, "Dislocation-free GaN nanowires", Microscopy and Microanalysis, vol. 9, no. S02: Cambridge University Press, pp. 342–343, 2003.
, "High-quality GaN on intentionally roughened c-sapphire", The European Physical Journal Applied Physics, vol. 22, no. 1: EDP Sciences, pp. 11–14, 2003.
, "Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs", IEEE Electron Device Letters, vol. 23, no. 6: IEEE, pp. 306–308, 2002.