Publications

Found 215 results
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2009
Xu, G., Y. J. Ding, H. Zhao, M. Jamil, N. Tansu, I. B. Zotova, C. E. Stutz, D. E. Diggs, N. Fernelius, F. K. Hopkins, et al., "THz generation from InN films based on interference between optical rectification and photocurrent surge", Conference on Lasers and Electro-Optics: Optical Society of America, pp. CTuG5, 2009.
Xu, G., Y. J. Ding, H. Zhao, M. Jamil, N. Tansu, I. B. Zotova, C. E. Stutz, D. E. Diggs, N. Fernelius, F. K. Hopkins, et al., "THz generation from InN films based on interference between optical rectification and photocurrent surge", Conference on Lasers and Electro-Optics: Optical Society of America, pp. CTuG5, 2009.
Xu, G., Y. J. Ding, H. Zhao, G. Liu, M. Jamil, N. Tansu, I. B. Zotova, C. E. Stutz, D. E. Diggs, N. Fernelius, et al., "THz generation from InN films due to destructive interference between optical rectification and photocurrent surge", Semiconductor Science and Technology, vol. 25, no. 1: IOP Publishing, pp. 015004, 2009.
Xu, G., Y. J. Ding, H. Zhao, G. Liu, M. Jamil, N. Tansu, I. B. Zotova, C. E. Stutz, D. E. Diggs, N. Fernelius, et al., "THz generation from InN films due to destructive interference between optical rectification and photocurrent surge", Semiconductor Science and Technology, vol. 25, no. 1: IOP Publishing, pp. 015004, 2009.
Shen, H., M. Wraback, H. Zhong, A. Tyagi, SP. DenBaars, S. Nakamura, and JS. Speck, "Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well", Applied Physics Letters, vol. 95, no. 3: AIP, pp. 033503, 2009.
2007
Zhong, H., A. Tyagi, NN. Fellows, RB. Chung, M. Saito, K. Fujito, JS. Speck, SP. DenBaars, and S. Nakamura, "Demonstration of high power blue-green light emitting diode on semipolar (1122) bulk GaN substrate", Electronics Letters, vol. 43, no. 15: IET Digital Library, pp. 825–827, 2007.
Tyagi, A., H. Zhong, N. N. Fellows, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High brightness violet InGaN/GaN light emitting diodes on semipolar (1011) bulk GaN substrates", Japanese Journal of Applied Physics, vol. 46, no. 2L: IOP Publishing, pp. L129, 2007.
Tyagi, A., H. Zhong, N. N. Fellows, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (101̄1̄) Bulk GaN Substrates", Japanese Journal of Applied Physics, vol. 46, pp. L129-L131, 2007.
Zhong, H., A. Tyagi, N. N. Fellows, F. Wu, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High power and high efficiency blue light emitting diode on freestanding semipolar (10 1 1) bulk GaN substrate", Applied physics letters, vol. 90, no. 23: AIP, pp. 233504, 2007.
Sato, H., A. Tyagi, H. Zhong, N. Fellows, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High power and high efficiency green light emitting diode on free-standing semipolar (112̅2) bulk GaN substrate", physica status solidi (RRL)-Rapid Research Letters, vol. 1, no. 4: WILEY-VCH Verlag, pp. 162–164, 2007.
Nakamura, S., S. P. DenBaars, J. S. Speck, M. C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, H. Sato, et al., "Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs", LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings, Oct, 2007.
Tyagi, A., H. Zhong, R. B. Chung, D. F. Feezell, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Semipolar (1011) InGaN", Japanese journal of applied physics, vol. 46, no. 17-19: Japanese journal of applied physics, 2007.
Tyagi, A., H. Zhong, R. B. Chung, D. F. Feezell, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Semipolar (1011) InGaN/GaN laser diodes on bulk GaN substrates", Japanese Journal of Applied Physics, vol. 46, no. 5L: IOP Publishing, pp. L444, 2007.
2006
Zhou, X., ET. Yu, DS. Green, and JS. Speck, "Dependence of local electronic structure in p-type GaN on crystal polarity and presence of inversion domain boundaries", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 24, no. 1: AVS, pp. 245–249, 2006.
2004
Zhang, H., EJ. Miller, ET. Yu, C. Poblenz, and JS. Speck, "Analysis of interface electronic structure in In x Ga 1- x N/GaN heterostructures", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 22, no. 4: AVS, pp. 2169–2174, 2004.
Zhang, H., EJ. Miller, ET. Yu, C. Poblenz, and JS. Speck, "Measurement of polarization charge and conduction-band offset at In x Ga 1- x N/GaN heterojunction interfaces", Applied physics letters, vol. 84, no. 23: AIP, pp. 4644–4646, 2004.
Zhang, H., EJ. Miller, ET. Yu, C. Poblenz, and JS. Speck, "Papers from the 31st Conference on the Physics and Chemistry of Semiconductor Interfaces-GaN and Related Materials-Analysis of interface electronic structure in InxGa1-xN/GaN heterostructures", Journal of Vacuum Science and Technology-Section B, vol. 22, no. 4: Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-, pp. 2169–2174, 2004.
2003
Wu, Y., JP. Zhang, GS. Cheng, M. Moskovits, and JS. Speck, "Defect Structure of Mg-Doped GaN Nanowires", Microscopy and Microanalysis, vol. 9, no. S02: Cambridge University Press, pp. 344–345, 2003.
Zhang, JP., Y. Wu, GS. Cheng, M. Moskovits, and JS. Speck, "Dislocation-free GaN nanowires", Microscopy and Microanalysis, vol. 9, no. S02: Cambridge University Press, pp. 342–343, 2003.
Golan, Y., P. Fini, D. Dahan, F. Wu, S. Zamir, J. Salzman, and JS. Speck, "High-quality GaN on intentionally roughened c-sapphire", The European Physical Journal Applied Physics, vol. 22, no. 1: EDP Sciences, pp. 11–14, 2003.
2002
Jimnez, A., D. Buttari, D. Jena, R. Coffie, S. Heikman, NQ. Zhang, L. Shen, E. Calleja, E. Munoz, J. Speck, et al., "Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs", IEEE Electron Device Letters, vol. 23, no. 6: IEEE, pp. 306–308, 2002.

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