Publications

Found 261 results
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2012
Masui, H., H. Yamada, K. Iso, A. Hirai, M. Saito, J. S. Speck, S. Nakamura, and S. P. DenBaars, Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut, 2012.
Masui, H., H. Yamada, K. Iso, J. S. Speck, S. Nakamura, and S. P. DenBaars, Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporation, 2012.
Das, NC., ML. Reed, AV. Sampath, H. Shen, M. Wraback, RM. Farrell, M. Iza, SC. Cruz, , NG. Young, et al., "Heterogeneous integration of InGaN and Silicon solar cells for enhanced energy harvesting", Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE: IEEE, pp. 003076–003079, 2012.
Browne, D. A., E. C. Young, J. R. Lang, C. A. Hurni, and J. S. Speck, "Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 30, no. 4: AVS, pp. 041513, 2012.
Zhao, Y., Q. Yan, C-Y. Huang, S-C. Huang, P. Shan Hsu, S. Tanaka, C-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, et al., "Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells", Applied Physics Letters, vol. 100, no. 20: AIP, pp. 201108, 2012.
Farrell, RM., EC. Young, F. Wu, SP. DenBaars, and JS. Speck, "Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices", Semiconductor Science and Technology, vol. 27, no. 2: IOP Publishing, pp. 024001, 2012.
Choi, S., F. Wu, R. Shivaraman, E. C. Young, and J. S. Speck, "Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy", Applied Physics Letters, vol. 100, no. 23: AIP, pp. 232102, 2012.
Koslow, I. L., M. T. Hardy, P. Shan Hsu, P-Y. Dang, F. Wu, A. Romanov, Y-R. Wu, E. C. Young, S. Nakamura, J. S. Speck, et al., "Performance and polarization effects in (11 2\= 2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers", Applied Physics Letters, vol. 101, no. 12: AIP, pp. 121106, 2012.
Hirai, A., Z. Jia, M. Saito, H. Yamada, K. Iso, S. P. DenBaars, S. Nakamura, and J. S. Speck, Planar nonpolar m-plane group III nitride films grown on miscut substrates, 2012.
Hsu, P. Shan, M. T. Hardy, E. C. Young, A. E. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Stress relaxation and critical thickness for misfit dislocation formation in (10 1\= 0) and (30 31\=) InGaN/GaN heteroepitaxy", Applied Physics Letters, vol. 100, no. 17: AIP, pp. 171917, 2012.
Hardy, M. T., E. C. Young, P. Shan Hsu, D. A. Haeger, I. L. Koslow, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (20 2\= 1) InGaN/GaN heterostructures", Applied Physics Letters, vol. 101, no. 13: AIP, pp. 132102, 2012.
Hardy, M. T., P. Shan Hsu, F. Wu, I. L. Koslow, E. C. Young, S. Nakamura, A. E. Romanov, S. P. DenBaars, and J. S. Speck, "Trace analysis of non-basal plane misfit stress relaxation in (20 2\= 1) and (30 3\= 1\=) semipolar InGaN/GaN heterostructures", Applied Physics Letters, vol. 100, no. 20: AIP, pp. 202103, 2012.
2013
Bryant, B. N., E. C. Young, F. Wu, K. Fujito, S. Nakamura, and J. S. Speck, "Basal Plane Stacking Fault Suppression by Nitrogen Carrier Gas in m-plane GaN Regrowth by Hydride Vapor Phase Epitaxy", Applied Physics Express, vol. 6, no. 11: IOP Publishing, pp. 115502, 2013.
Hsu, P. Shan, F. Wu, E. C. Young, A. E. Romanov, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Blue and aquamarine stress-relaxed semipolar (11 2\= 2) laser diodes", Applied Physics Letters, vol. 103, no. 16: AIP, pp. 161117, 2013.
DenBaars, S. P., D. Feezell, K. Kelchner, S. Pimputkar, C-C. Pan, C-C. Yen, S. Tanaka, Y. Zhao, N. Pfaff, R. Farrell, et al., "Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays", Acta Materialia, vol. 61, no. 3: Pergamon, pp. 945–951, 2013.
Farell, R. M., E. C. Young, F. Wu, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Development of high-performance nonpolar III-nitride light-emitting devices", Electronics, Communications and Photonics Conference (SIECPC), 2013 Saudi International: IEEE, pp. 1–8, 2013.
Liu, X., J. Kim, R. Yeluri, S. Lal, H. Li, J. Lu, S. Keller, B. Mazumder, JS. Speck, and UK. Mishra, "Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition", Journal of Applied Physics, vol. 114, no. 16: AIP, pp. 164507, 2013.
Young, E. C., and J. S. Speck, "Heteroepitaxial Lattice Mismatch Stress Relaxation in Nonpolar and Semipolar GaN by Dislocation Glide", ECS Transactions, vol. 50, no. 9: The Electrochemical Society, pp. 797–800, 2013.
Young, NG., RM. Farrell, YL. Hu, Y. Terao, M. Iza, S. Keller, SP. DenBaars, S. Nakamura, and JS. Speck, "High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates", Applied Physics Letters, vol. 103, no. 17: AIP, pp. 173903, 2013.
Keller, S., R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells", Japanese Journal of Applied Physics, vol. 52, no. 8S: IOP Publishing, pp. 08JC10, 2013.
Wu, Y-R., S-ting. Yeh, D-W. Lin, C-K. Li, H-C. Kuo, and J. S. Speck, "Influences of indium fluctuation to the carrier transport, auger recombination, and efficiency droop", Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on: IEEE, pp. 111–112, 2013.
Farrell, R. M., D. J. Friedman, NG. Young, EE. Perl, N. Singh, , CJ. Neufeld, M. Iza, SC. Cruz, S. Keller, et al., "InGaN-based solar cells and high-performance broadband optical coatings for ultrahigh efficiency hybrid multijunction device designs", Lasers and Electro-Optics (CLEO), 2013 Conference on: IEEE, pp. 1–2, 2013.
Zhao, Y., Q. Yan, D. Feezell, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Optical polarization characteristics of semipolar (303\= 1) and (303\= 1\=) InGaN/GaN light-emitting diodes", Optics express, vol. 21, no. 101: Optical Society of America, pp. A53–A59, 2013.
Das, NC., ML. Reed, AV. Sampath, H. Shen, M. Wraback, RM. Farrell, M. Iza, SC. Cruz, , NG. Young, et al., "Optimization of annealing process for improved InGaN solar cell performance", Journal of electronic materials, vol. 42, no. 12: Springer US, pp. 3467–3470, 2013.
Bryant, B. N., A. Hirai, E. C. Young, S. Nakamura, and J. S. Speck, "Quasi-equilibrium crystal shapes and kinetic Wulff plots for gallium nitride grown by hydride vapor phase epitaxy", Journal of Crystal Growth, vol. 369: Elsevier, pp. 14–20, 2013.

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