Publications

Found 209 results
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1999
Heying, B., EJ. Tarsa, CR. Elsass, P. Fini, SP. DenBaars, and JS. Speck, "Dislocation mediated surface morphology of GaN", Journal of Applied Physics, vol. 85, no. 9: AIP, pp. 6470–6476, 1999.
Nagra, A. S., T. R. Taylor, P. Periaswamy, J. Speck, and R. A. York, "First demonstration of a periodically loaded line phase shifter using BST capacitors", MRS Online Proceedings Library Archive, vol. 603: Cambridge University Press, 1999.
Stephenson, GB., JA. Eastman, O. Auciello, A. Munkholm, C. Thompson, PH. Fuoss, P. Fini, SP. DenBaars, and JS. Speck, "IN SITU SYNCHROTRON RADIATION RESEARCH IN MATERIALS SCIENCE-Real-Time X-Ray Scattering Studies of Surface Structure During Metalorganic Chemical Vapor Deposition of GaN", MRS Bulletin-Materials Research Society, vol. 24, no. 1: [Pittsburgh, PA]: The Society, pp. 21–25, 1999.
Stephenson, GB., JA. Eastman, C. Thompson, O. Auciello, LJ. Thompson, A. Munkholm, P. Fini, SP. DenBaars, and JS. Speck, "Observation of growth modes during metal-organic chemical vapor deposition of GaN", Applied physics letters, vol. 74, no. 22: AIP, pp. 3326–3328, 1999.
Stephenson, GB., JA. Eastman, C. Thompson, O. Auciello, LJ. Thompson, A. Munkholm, P. Fini, SP. DenBaars, and JS. Speck, "Observation of growth modes during metal-organic chemical vapor deposition of GaN", Applied physics letters, vol. 74, no. 22: AIP, pp. 3326–3328, 1999.
Padmini, P., TR. Taylor, MJ. Lefevre, AS. Nagra, RA. York, and JS. Speck, "Realization of high tunability barium strontium titanate thin films by rf magnetron sputtering", Applied Physics Letters, vol. 75, no. 20: AIP, pp. 3186–3188, 1999.
G Stephenson, B., J. A. Eastman, O. Auciello, A. Munkholm, C. Thompson, P. H. Fuoss, P. Fini, S. P. DenBaars, and J. S. Speck, "Real-time X-ray scattering studies of surface structure during metalorganic chemical vapor deposition of GaN", MRS Bulletin, vol. 24, no. 1: Cambridge University Press, pp. 21–25, 1999.
Munkholm, A., GB. Stephenson, JA. Eastman, C. Thompson, P. Fini, JS. Speck, O. Auciello, PH. Fuoss, and SP. DenBaars, "Surface structure of GaN (0001) in the chemical vapor deposition environment", Physical review letters, vol. 83, no. 4: APS, pp. 741, 1999.
1998
Thompson, C., A. Munkholm, GB. Stephenson, JA. Eastman, O. Auciello, CM. Foster, P. Fini, SP. DenBaars, and JS. Speck, "Cubic and Hexagonal Fractions in GaN Nucleation Layers Measured Using Grazing Incidence X-Ray Scattering", APS March Meeting Abstracts, 1998.
Munkholm, A., C. Thompson, CM. Foster, JA. Eastman, O. Auciello, GB. Stephenson, P. Fini, SP. DenBaars, and JS. Speck, "Determination of the cubic to hexagonal fraction in GaN nucleation layers using grazing incidence x-ray scattering", Applied physics letters, vol. 72, no. 23: AIP, pp. 2972–2974, 1998.
Wu, XH., P. Fini, EJ. Tarsa, B. Heying, S. Keller, UK. Mishra, SP. DenBaars, and JS. Speck, "Dislocation generation in GaN heteroepitaxy", Journal of Crystal Growth, vol. 189: North-Holland, pp. 231–243, 1998.
Fini, P., X. Wu, EJ. Tarsa, Y. Golan, V. Srikant, S. Keller, SP. DenBaars, and JS. Speck, "The effect of growth environment on the morphological and extended defect evolution in GaN grown by metalorganic chemical vapor deposition", Japanese journal of applied physics, vol. 37, no. 8R: IOP Publishing, pp. 4460, 1998.
Fini, P., X. Wu, E. J. Tarsa, Y. Golan, V. Srikant, S. Keller, S. P. Denbaars, and J. S. Speck, "The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor Deposition", Japanese Journal of Applied Physics, vol. 37, pp. 4460, 1998.
Hansen, PJ., YE. Strausser, AN. Erickson, EJ. Tarsa, P. Kozodoy, EG. Brazel, JP. Ibbetson, U. Mishra, V. Narayanamurti, SP. DenBaars, et al., "Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition", Applied physics letters, vol. 72, no. 18: AIP, pp. 2247–2249, 1998.
Fini, P., X. Wu, EJ. Tarsa, Y. Golan, V. Srikant, S. Keller, SP. DenBaars, and JS. Speck, "Structure and Mechanical and Thermal Properties of Condensed Matter-The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor", Japanese Journal of Applied Physics-Part 1 Regular Papers and Short Notes, vol. 37, no. 8: Tokyo, Japan: Publication Board, Japanese Journal of Applied Physics, c1982-, pp. 4460–4466, 1998.
1997
Zinck, JJ., EJ. Tarsa, B. Brar, and JS. Speck, "Desorption behavior of antimony multilayer passivation on GaAs (001)", Journal of applied physics, vol. 82, no. 12: AIP, pp. 6067–6072, 1997.
Tarsa, EJ., B. Heying, XH. Wu, P. Fini, SP. DenBaars, and JS. Speck, "Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy", Journal of applied physics, vol. 82, no. 11: AIP, pp. 5472–5479, 1997.
Mishra, U. K., P. Parikh, P. Chavarkar, J. Yen, J. Champlain, B. Thibeault, H. Reese, S. Stone Shi, E. Hu, L. Zhu, et al., "Oxide based compound semiconductor electronics", Electron Devices Meeting, 1997. IEDM'97. Technical Digest., International: IEEE, pp. 545–548, 1997.
Eddy, MM., R. Hanson, MR. Rao, B. Zuck, JS. Speck, and EJ. Tarsa, "Oxide epitaxial lift-off (OELO)", MRS Online Proceedings Library Archive, vol. 474: Cambridge University Press, 1997.

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