Publications

Found 209 results
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2013
DenBaars, S. P., D. Feezell, K. Kelchner, S. Pimputkar, C-C. Pan, C-C. Yen, S. Tanaka, Y. Zhao, N. Pfaff, R. Farrell, et al., "Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays", Acta Materialia, vol. 61, no. 3: Pergamon, pp. 945–951, 2013.
Zhao, Y., S. Ho Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Green semipolar (2021) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth", Applied Physics Express, vol. 6, no. 6: IOP Publishing, pp. 062102, 2013.
Zhao, Y., S. Ho Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Green semipolar (202̄1̄) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth", Applied Physics Express, vol. 6, 6, 2013.
Nakamura, S., S. P. DenBaars, D. F. Feezell, J. S. Speck, C-C. Pan, and S. Tanaka, High output power, high efficiency blue light-emitting diodes, nov # " 14", 2013.
Young, NG., RM. Farrell, YL. Hu, Y. Terao, M. Iza, S. Keller, SP. DenBaars, S. Nakamura, and JS. Speck, "High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates", Applied Physics Letters, vol. 103, no. 17: AIP, pp. 173903, 2013.
Keller, S., R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells", Japanese Journal of Applied Physics, vol. 52, no. 8S: IOP Publishing, pp. 08JC10, 2013.
Bierwagen, O., M. E. White, M-Y. Tsai, and J. S. Speck, "MBE of transparent semiconducting oxides", Molecular Beam Epitaxy, pp. 347–367, 2013.
Tamboli, A., E. L. Hu, and J. S. Speck, Photoelectrochemical etching for chip shaping of light emitting diodes, 2013.
Zhao, Y., F. Wu, C-Y. Huang, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Suppressing void defects in long wavelength semipolar (20 2 1) InGaN quantum wells by growth rate optimization", Applied Physics Letters, vol. 102, no. 9: AIP, pp. 091905, 2013.
2014
Ohta, H., F. Wu, A. Tyagi, A. Chakraborty, J. S. Speck, S. P. DenBaars, S. Nakamura, and E. C. Young, Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations, 2014.
Feneberg, M., C. Lidig, K. Lange, M. E. White, M. Y. Tsai, J. S. Speck, O. Bierwagen, and R. Goldhahn, "Anisotropy of the electron effective mass in rutile SnO2 determined by infrared ellipsometry", physica status solidi (a), vol. 211, no. 1: Wiley Online Library, pp. 82–86, 2014.
Korhonen, E., F. Tuomisto, O. Bierwagen, JS. Speck, and Z. Galazka, "Compensating vacancy defects in Sn-and Mg-doped In 2 O 3", Physical Review B, vol. 90, no. 24: American Physical Society, pp. 245307, 2014.
Mogilatenko, A., H. Kirmse, O. Bierwagen, M. Schmidbauer, M-Y. Tsai, I. Häusler, M. E. White, and J. S. Speck, "Effect of heavy Ga doping on defect structure of SnO2 layers", physica status solidi (a), vol. 211, no. 1: Wiley Online Library, pp. 87–92, 2014.
Linez, F., M. Ritt, C. Rauch, L. Kilanski, S. Choi, J. Räisänen, JS. Speck, and F. Tuomisto, "He implantation induced defects in InN", Journal of Physics: Conference Series, vol. 505, no. 1: IOP Publishing, pp. 012012, 2014.
Watanabe, K., T. Ohsawa, I. Sakaguchi, O. Bierwagen, M. E. White, M-Y. Tsai, R. Takahashi, E. M. Ross, Y. Adachi, J. S. Speck, et al., "Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions", Applied Physics Letters, vol. 104, no. 13: AIP, pp. 132110, 2014.
Watanabe, K., T. Ohsawa, I. Sakaguchi, O. Bierwagen, M. E. White, M-Y. Tsai, R. Takahashi, E. M. Ross, Y. Adachi, J. S. Speck, et al., "Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions", Applied Physics Letters, vol. 104, no. 13: AIP, pp. 132110, 2014.
Speck, J. S., A. Tyagi, S. P. DenBaars, and S. Nakamura, Limiting strain relaxation in III-nitride hetero-structures by substrate and epitaxial layer patterning, 2014.
Feneberg, M., C. Lidig, K. Lange, R. Goldhahn, M. D. Neumann, N. Esser, O. Bierwagen, M. E. White, M. Y. Tsai, and J. S. Speck, "Ordinary and extraordinary dielectric functions of rutile SnO2 up to 20 eV", Applied Physics Letters, vol. 104, no. 23: AIP, pp. 231106, 2014.
Korhonen, E., F. Tuomisto, O. Bierwagen, JS. Speck, ME. White, and Z. Galazka, "Vacancy complexes in Sb-doped SnO 2", AIP Conference Proceedings, vol. 1583, no. 1: AIP, pp. 368–371, 2014.
Prozheeva, V., F. Tuomisto, G. Koblmüller, J. S. Speck, A. Knübel, and R. Aidam, "Vacancy defect formation in PA-MBE grown C-doped InN", physica status solidi (c), vol. 11, no. 3-4: Wiley Online Library, pp. 530–532, 2014.

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