Publications

Found 209 results
Author Title Type [ Year(Desc)]
Filters: First Letter Of Last Name is T  [Clear All Filters]
1992
Williams, KE., EJ. Tarsa, and JS. Speck, "Growth of InAs on diamond (001) by molecular beam epitaxy", Applied physics letters, vol. 61, no. 4: AIP, pp. 405–407, 1992.
1993
Tarsa, EJ., M. De Graef, DR. Clarke, AC. Gossard, and JS. Speck, "Growth and characterization of (111) and (001) oriented MgO films on (001) GaAs", Journal of applied physics, vol. 73, no. 7: AIP, pp. 3276–3283, 1993.
Fork, DK., JJ. Kingston, GB. Anderson, EJ. Tarsa, and JS. Speck, "Progress toward viable epitaxial oxide ferroelectric waveguide heterostructures on GaAs", MRS Online Proceedings Library Archive, vol. 310: Cambridge University Press, 1993.
Tarsa, EJ., JS. Speck, and MD. Robinson, "Pulsed laser deposition of epitaxial silicon/h-Pr2O3/silicon heterostructures", Applied physics letters, vol. 63, no. 4: AIP, pp. 539–541, 1993.
Tarsa, EJ., JH. English, and JS. Speck, "Pulsed laser deposition of oriented In2O3 on (001) InAs, MgO, and yttria-stabilized zirconia", Applied physics letters, vol. 62, no. 19: AIP, pp. 2332–2334, 1993.
1994
Tarsa, EJ., KL. McCormick, and JS. Speck, "Common Themes in ther Epitaxial Growth of Oxides on Semiconductors", MRS Online Proceedings Library Archive, vol. 341: Cambridge University Press, 1994.
Wilkinson, A. P., J. S. Speck, A. K. Cheetham, S. Natarajan, and J. Meurig Thomas, "{In situ x-ray diffraction study of crystallization kinetics in PbZr1-xTixO3,(PZT", Chemistry of Materials, vol. 6, no. 6: American Chemical Society, pp. 750–754, 1994.
1997
Zinck, JJ., EJ. Tarsa, B. Brar, and JS. Speck, "Desorption behavior of antimony multilayer passivation on GaAs (001)", Journal of applied physics, vol. 82, no. 12: AIP, pp. 6067–6072, 1997.
Tarsa, EJ., B. Heying, XH. Wu, P. Fini, SP. DenBaars, and JS. Speck, "Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy", Journal of applied physics, vol. 82, no. 11: AIP, pp. 5472–5479, 1997.
Mishra, U. K., P. Parikh, P. Chavarkar, J. Yen, J. Champlain, B. Thibeault, H. Reese, S. Stone Shi, E. Hu, L. Zhu, et al., "Oxide based compound semiconductor electronics", Electron Devices Meeting, 1997. IEDM'97. Technical Digest., International: IEEE, pp. 545–548, 1997.
Eddy, MM., R. Hanson, MR. Rao, B. Zuck, JS. Speck, and EJ. Tarsa, "Oxide epitaxial lift-off (OELO)", MRS Online Proceedings Library Archive, vol. 474: Cambridge University Press, 1997.
1998
Thompson, C., A. Munkholm, GB. Stephenson, JA. Eastman, O. Auciello, CM. Foster, P. Fini, SP. DenBaars, and JS. Speck, "Cubic and Hexagonal Fractions in GaN Nucleation Layers Measured Using Grazing Incidence X-Ray Scattering", APS March Meeting Abstracts, 1998.
Munkholm, A., C. Thompson, CM. Foster, JA. Eastman, O. Auciello, GB. Stephenson, P. Fini, SP. DenBaars, and JS. Speck, "Determination of the cubic to hexagonal fraction in GaN nucleation layers using grazing incidence x-ray scattering", Applied physics letters, vol. 72, no. 23: AIP, pp. 2972–2974, 1998.
Wu, XH., P. Fini, EJ. Tarsa, B. Heying, S. Keller, UK. Mishra, SP. DenBaars, and JS. Speck, "Dislocation generation in GaN heteroepitaxy", Journal of Crystal Growth, vol. 189: North-Holland, pp. 231–243, 1998.
Fini, P., X. Wu, EJ. Tarsa, Y. Golan, V. Srikant, S. Keller, SP. DenBaars, and JS. Speck, "The effect of growth environment on the morphological and extended defect evolution in GaN grown by metalorganic chemical vapor deposition", Japanese journal of applied physics, vol. 37, no. 8R: IOP Publishing, pp. 4460, 1998.
Fini, P., X. Wu, E. J. Tarsa, Y. Golan, V. Srikant, S. Keller, S. P. Denbaars, and J. S. Speck, "The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor Deposition", Japanese Journal of Applied Physics, vol. 37, pp. 4460, 1998.
Hansen, PJ., YE. Strausser, AN. Erickson, EJ. Tarsa, P. Kozodoy, EG. Brazel, JP. Ibbetson, U. Mishra, V. Narayanamurti, SP. DenBaars, et al., "Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition", Applied physics letters, vol. 72, no. 18: AIP, pp. 2247–2249, 1998.
Fini, P., X. Wu, EJ. Tarsa, Y. Golan, V. Srikant, S. Keller, SP. DenBaars, and JS. Speck, "Structure and Mechanical and Thermal Properties of Condensed Matter-The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor", Japanese Journal of Applied Physics-Part 1 Regular Papers and Short Notes, vol. 37, no. 8: Tokyo, Japan: Publication Board, Japanese Journal of Applied Physics, c1982-, pp. 4460–4466, 1998.
1999
Heying, B., EJ. Tarsa, CR. Elsass, P. Fini, SP. DenBaars, and JS. Speck, "Dislocation mediated surface morphology of GaN", Journal of Applied Physics, vol. 85, no. 9: AIP, pp. 6470–6476, 1999.
Nagra, A. S., T. R. Taylor, P. Periaswamy, J. Speck, and R. A. York, "First demonstration of a periodically loaded line phase shifter using BST capacitors", MRS Online Proceedings Library Archive, vol. 603: Cambridge University Press, 1999.

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