Publications

Found 2098 results
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2009
Miller, N., J. Ager, R. Jones, H. Smith, K. Man Yu, E. Haller, W. Walukiewicz, W. Schaff, C. Gallinat, G. Koblmüller, et al., "Thermopower of n-and p-type InN", APS Meeting Abstracts, 2009.
Miller, N., J. Ager, R. Jones, H. Smith, K. Man Yu, E. Haller, W. Walukiewicz, W. Schaff, C. Gallinat, G. Koblmüller, et al., "Thermopower of n-and p-type InN", APS Meeting Abstracts, 2009.
Xu, G., Y. J. Ding, H. Zhao, M. Jamil, N. Tansu, I. B. Zotova, C. E. Stutz, D. E. Diggs, N. Fernelius, F. K. Hopkins, et al., "THz generation from InN films based on interference between optical rectification and photocurrent surge", Conference on Lasers and Electro-Optics: Optical Society of America, pp. CTuG5, 2009.
Xu, G., Y. J. Ding, H. Zhao, G. Liu, M. Jamil, N. Tansu, I. B. Zotova, C. E. Stutz, D. E. Diggs, N. Fernelius, et al., "THz generation from InN films due to destructive interference between optical rectification and photocurrent surge", Semiconductor Science and Technology, vol. 25, no. 1: IOP Publishing, pp. 015004, 2009.
Shen, H., M. Wraback, H. Zhong, A. Tyagi, SP. DenBaars, S. Nakamura, and JS. Speck, "Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well", Applied Physics Letters, vol. 95, no. 3: AIP, pp. 033503, 2009.
Shen, H., M. Wraback, H. Zhong, A. Tyagi, SP. DenBaars, S. Nakamura, and JS. Speck, "Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well", Applied Physics Letters, vol. 95, no. 3: AIP, pp. 033503, 2009.
Reurings, F., F. Tuomisto, C. S. Gallinat, G. Koblmüller, and J. S. Speck, "Vacancy defects probed with positron annihilation spectroscopy in In-polar InN grown by plasma-assisted molecular beam epitaxy: Effects of growth conditions", physica status solidi (c), vol. 6, no. S2: WILEY-VCH Verlag, 2009.
2008
Raman, A., S. Dasgupta, S. Rajan, J. S. Speck, and U. K. Mishra, "AlGaN channel high electron mobility transistors: Device performance and power-switching figure of merit", Japanese Journal of Applied Physics, vol. 47, no. 5R: IOP Publishing, pp. 3359, 2008.
Hashimoto, T., F. Wu, J. S. Speck, and S. Nakamura, "Ammonothermal growth of bulk GaN", Journal of Crystal Growth, vol. 310, no. 17: Elsevier, pp. 3907–3910, 2008.
Gorczyca, I., L. Dmowski, J. Plesiewicz, T. Suski, N. Egede Christensen, A. Svane, CS. Gallinat, G. Koblmueller, and JS. Speck, "Band structure and effective mass of InN under pressure", physica status solidi (b), vol. 245, no. 5: Wiley Online Library, pp. 887–889, 2008.
Gorczyca, I., L. Dmowski, J. Plesiewicz, T. Suski, N. Egede Christensen, A. Svane, CS. Gallinat, G. Koblmueller, and JS. Speck, "Band structure and effective mass of InN under pressure", physica status solidi (b), vol. 245, no. 5: Wiley Online Library, pp. 887–889, 2008.
Gorczyca, I., L. Dmowski, J. Plesiewicz, T. Suski, N. Egede Christensen, A. Svane, CS. Gallinat, G. Koblmueller, and JS. Speck, "Band structure and effective mass of InN under pressure", physica status solidi (b), vol. 245, no. 5: Wiley Online Library, pp. 887–889, 2008.
McLaurin, M. B., A. Hirai, E. Young, F. Wu, and J. S. Speck, "Basal plane stacking-fault related anisotropy in X-ray rocking curve widths of m-plane GaN", Japanese Journal of Applied Physics, vol. 47, no. 7R: IOP Publishing, pp. 5429, 2008.
Sato, H., H. Hirasawa, H. Asamizu, N. Fellows, A. Tyagi, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "The Blue Laser Diode'The Blue Laser Diode', 1997", Journal of light and visual environment, vol. 32, no. 2, pp. 107–110, 2008.
Sato, H., H. Hirasawa, H. Asamizu, N. Fellows, A. Tyagi, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "The Blue Laser Diode'The Blue Laser Diode', 1997", Journal of light and visual environment, vol. 32, no. 2, pp. 107–110, 2008.
Sato, H., H. Hirasawa, H. Asamizu, N. Fellows, A. Tyagi, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "The Blue Laser Diode'The Blue Laser Diode', 1997", Journal of light and visual environment, vol. 32, no. 2, pp. 107–110, 2008.
Bierwagen, O., T. Ive, C. G. Van de Walle, and J. S. Speck, "Causes of incorrect carrier-type identification in van der Pauw–Hall measurements", Applied Physics Letters, vol. 93, no. 24: AIP, pp. 242108, 2008.
Armstrong, A., J. Caudill, A. Corrion, C. Poblenz, UK. Mishra, JS. Speck, and SA. Ringel, "Characterization of majority and minority carrier deep levels in p-type GaN: Mg grown by molecular beam epitaxy using deep level optical spectroscopy", Journal of Applied Physics, vol. 103, no. 6: AIP, pp. 063722, 2008.
Law, JJM., ET. Yu, BA. Haskell, PT. Fini, S. Nakamura, JS. Speck, and SP. DenBaars, "Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy", Journal of Applied Physics, vol. 103, no. 1: AIP, pp. 014305, 2008.
Arehart, AR., A. Corrion, C. Poblenz, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films", physica status solidi (c), vol. 5, no. 6: Wiley Online Library, pp. 1750–1752, 2008.
Yamada, H., K. Iso, M. Saito, H. Hirasawa, N. Fellows, H. Masui, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Comparison of InGaN/GaN light emitting diodes grown on m-plane and a-plane bulk GaN substrates", physica status solidi (RRL)-Rapid Research Letters, vol. 2, no. 2: Wiley Online Library, pp. 89–91, 2008.
Yamada, H., K. Iso, M. Saito, H. Hirasawa, N. Fellows, H. Masui, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Comparison of InGaN/GaN light emitting diodes grown on m-plane and a-plane bulk GaN substrates", physica status solidi (RRL)-Rapid Research Letters, vol. 2, no. 2: Wiley Online Library, pp. 89–91, 2008.
Kim, K. Choong, M. C. Schmidt, F. Wu, A. Hirai, M. B. McLaurin, S. P. DenBaars, S. Nakamura, and J. S. Speck, CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B) N ON VARIOUS SUBSTRATES, 2008.
Kim, K. Choong, M. C. Schmidt, F. Wu, A. Hirai, M. B. McLaurin, S. P. DenBaars, S. Nakamura, and J. S. Speck, CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B) N ON VARIOUS SUBSTRATES, 2008.
Arehart, AR., A. Corrion, C. Poblenz, JS. Speck, UK. Mishra, and SA. Ringel, "Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy", Applied Physics Letters, vol. 93, no. 11: AIP, pp. 112101, 2008.

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