Publications

Found 2098 results
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2004
Craven, MD., F. Wu, A. Chakraborty, B. Imer, UK. Mishra, SP. DenBaars, and JS. Speck, "Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition", Applied physics letters, vol. 84, no. 8: AIP, pp. 1281–1283, 2004.
P Alejandro, C., S. Keller, T. Li, UK. Mishra, JS. Speck, and SP. DenBaars, "MOCVD growth of AlGaN films for solar blind photodetectors", physica status solidi (a), vol. 201, no. 9: Wiley Online Library, pp. 2185–2189, 2004.
Andrews, AM., R. LeSar, MA. Kerner, JS. Speck, AE. Romanov, AL. Kolesnikova, M. Bobeth, and W. Pompe, "Modeling crosshatch surface morphology in growing mismatched layers. Part II: Periodic boundary conditions and dislocation groups", Journal of applied physics, vol. 95, no. 11: AIP, pp. 6032–6047, 2004.
Chakraborty, A., H. Xing, MD. Craven, S. Keller, T. Mates, JS. Speck, SP. DenBaars, and UK. Mishra, "Nonpolar a-plane p-type GaN and p-n Junction Diodes", Journal of applied physics, vol. 96, no. 8: AIP, pp. 4494–4499, 2004.
Chakraborty, A., BA. Haskell, S. Keller, JS. Speck, SP. DenBaars, S. Nakamura, and UK. Mishra, "Nonpolar InGaN/ GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak", Applied Physics Letters, vol. 85, no. 22: AIP, pp. 5143–5145, 2004.
Speck, J. S., and P. M. Petroff, Order Lattices of Quantum Dots: DTIC Document, 2004.
Zhang, H., EJ. Miller, ET. Yu, C. Poblenz, and JS. Speck, "Papers from the 31st Conference on the Physics and Chemistry of Semiconductor Interfaces-GaN and Related Materials-Analysis of interface electronic structure in InxGa1-xN/GaN heterostructures", Journal of Vacuum Science and Technology-Section B, vol. 22, no. 4: Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-, pp. 2169–2174, 2004.
Rajan, S., P. Waltereit, C. Poblenz, S. J. Heikman, D. S. Green, J. S. Speck, and U. K. Mishra, "Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE", IEEE Electron Device Letters, vol. 25, no. 5: IEEE, pp. 247–249, 2004.
Tenne, DA., XX. Xi, YL. Li, LQ. Chen, A. Soukiassian, DG. Schlom, TR. Taylor, PJ. Hansen, JS. Speck, RA. York, et al., "Raman studies of lattice dynamics and phase transitions in barium strontium titanate thin films", APS Meeting Abstracts, 2004.
Tenne, DA., XX. Xi, YL. Li, LQ. Chen, A. Soukiassian, DG. Schlom, TR. Taylor, PJ. Hansen, JS. Speck, RA. York, et al., "Raman studies of lattice dynamics and phase transitions in barium strontium titanate thin films", APS Meeting Abstracts, 2004.
Tenne, DA., XX. Xi, YL. Li, LQ. Chen, A. Soukiassian, DG. Schlom, TR. Taylor, PJ. Hansen, JS. Speck, RA. York, et al., "Raman studies of lattice dynamics and phase transitions in barium strontium titanate thin films", APS Meeting Abstracts, 2004.
Moran, B., F. Wu, AE. Romanov, UK. Mishra, SP. DenBaars, and JS. Speck, "Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer", Journal of Crystal Growth, vol. 273, no. 1-2: North-Holland, pp. 38–47, 2004.
Andrews, AM., R. LeSar, MA. Kemer, JS. Speck, AE. Romanov, AL. Koiesnikova, M. Bobeth, and W. Pompe, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERT1ES OF CONDENSED MATTER (PACS 61-68, 78)-Modeling crosshatch surface moiphology in grovving mismatched layers. Part II: Periodic boundary", Journal of Applied Physics, vol. 95, no. 11: New York, NY: American Institute of Physics, c1937-, pp. 6032–6047, 2004.
Waltereit, P., C. Poblenz, S. Rajan, F. Wu, U. K. Mishra, and J. S. Speck, "Structural properties of GaN buffer layers on 4H-SiC (0001) grown by plasma-assisted molecular beam epitaxy for high electron mobility transistors", Japanese journal of applied physics, vol. 43, no. 12A: IOP Publishing, pp. L1520, 2004.
Speck, J. S., Systematic Studies of Carbon Doping in High Quality GaN Grown by Molecular Beam Epitaxy: DTIC Document, 2004.
Craven, MD., P. Waltereit, JS. Speck, and SP. DenBaars, "Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells", Applied physics letters, vol. 84, no. 4: AIP, pp. 496–498, 2004.
2005
Rajan, S., A. Chini, M. Wong, Y. Fu, F. Wu, JS. Speck, UK. Mishra, M. J. Grundmann, and C. Suh, Advanced Transistor Structures Based on N-face GaN , 2005.
Rajan, S., A. Chini, M. Wong, Y. Fu, F. Wu, JS. Speck, UK. Mishra, M. J. Grundmann, and C. Suh, Advanced Transistor Structures Based on N-face GaN , 2005.
Hashimoto, T., K. Fujito, M. Saito, J. S. Speck, and S. Nakamura, "Ammonothermal growth of GaN on an over-1-inch seed crystal", Japanese journal of applied physics, vol. 44, no. 12L: IOP Publishing, pp. L1570, 2005.
Hashimoto, T., K. Fujito, M. Saito, J. S. Speck, and S. Nakamura, "Ammonothermal growth of GaN on an over-1-inch seed crystal", Japanese journal of applied physics, vol. 44, no. 12L: IOP Publishing, pp. L1570, 2005.
Romanov, AE., P. Waltereit, and JS. Speck, "Buried stressors in nitride semiconductors: Influence on electronic properties", Journal of applied physics, vol. 97, no. 4: AIP, pp. 043708, 2005.
Baker, T. J., B. A. Haskell, F. Wu, P. T. Fini, J. S. Speck, and S. Nakamura, "Characterization of planar semipolar gallium nitride films on spinel substrates", Japanese journal of applied physics, vol. 44, no. 7L: IOP Publishing, pp. L920, 2005.
Baker, T. J., B. A. Haskell, F. Wu, P. T. Fini, J. S. Speck, and S. Nakamura, "Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates", Japanese Journal of Applied Physics, vol. 44, pp. L920, 2005.
Koblmüller, G., J. Brown, R. Averbeck, H. Riechert, P. Pongratz, and J. S. Speck, "Continuous evolution of Ga adlayer coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN", Applied Physics Letters, vol. 86, no. 4: AIP, pp. 041908, 2005.
Haskell, BA., TJ. Baker, MB. McLaurin, F. Wu, PT. Fini, SP. DenBaars, JS. Speck, and S. Nakamura, "Defect reduction in (1 1\= 00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy", Applied Physics Letters, vol. 86, no. 11: AIP, pp. 111917, 2005.

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