Publications

Found 384 results
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2003
Sato, H., P. Waltereit, D. S. Green, C. Poblenz, T. Katona, S. P. DenBaars, J. S. Speck, H. Tamura, and C. Funaoka, "Blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy", physica status solidi (c), no. 7: Wiley Online Library, pp. 2193–2197, 2003.
DenBaars, SP., T. Katona, P. Cantu, A. Hanlon, S. Keller, M. Schmidt, T. Margalith, M. Pattisson, C. Moe, J. Speck, et al., "GaN based high brightness LEDs and UV LEDs", Electron Devices Meeting, 2003. IEDM'03 Technical Digest. IEEE International: IEEE, pp. 16–1, 2003.
Hudait, MK., Y. Lin, DM. Wilt, JS. Speck, CA. Tivarus, ER. Heller, JP. Pelz, and SA. Ringel, "High-quality InAs y P 1- y step-graded buffer by molecular-beam epitaxy", Applied physics letters, vol. 82, no. 19: AIP, pp. 3212–3214, 2003.
Brandt, O., Y. Jun Sun, H-P. Schönherr, K. H. Ploog, P. Waltereit, S-H. Lim, and J. S. Speck, "Improved synthesis of (In, Ga) N/GaN multiple quantum wells by plasma-assisted molecular-beam epitaxy", Applied physics letters, vol. 83, no. 1: AIP, pp. 90–92, 2003.
Brandt, O., Y. Jun Sun, H-P. Schönherr, K. H. Ploog, P. Waltereit, S-H. Lim, and J. S. Speck, "Improved synthesis of (In,Ga)N/GaN multiple quantum wells by plasma-assisted molecular-beam epitaxy", Applied Physics Letters, vol. 83, pp. 90-92, 2003.
Arehart, AR., C. Poblenz, B. Heying, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Influence of Growth Parameters on the Deep Level Spectrum in MBE-Grown n-GaN", MRS Online Proceedings Library Archive, vol. 798: Cambridge University Press, 2003.
Taylor, TR., PJ. Hansen, N. Pervez, B. Acikel, RA. York, and JS. Speck, "Influence of stoichiometry on the dielectric properties of sputtered strontium titanate thin films", Journal of applied physics, vol. 94, no. 5: AIP, pp. 3390–3396, 2003.
Sun, Y. Jun, O. Brandt, S. Cronenberg, S. Dhar, H. T. Grahn, K. H. Ploog, P. Waltereit, and J. S. Speck, "Nonpolar In x Ga 1- x N/GaN (11\= 0 0) multiple quantum wells grown on γ- LiAlO 2 (100) by plasma-assisted molecular-beam epitaxy", Physical Review B, vol. 67, no. 4: APS, pp. 041306, 2003.
Pervez, NK., PJ. Hansen, TR. Taylor, JS. Speck, and RA. York, "Observation of long transients in the electrical characterization of thin film BST capacitors", Integrated Ferroelectrics, vol. 53, no. 1: Taylor & Francis, pp. 503–511, 2003.
Sun, Y. Jun, O. Brandt, S. Cronenberg, S. Dhar, H. T. Grahn, K. H. Ploog, P. Waltereit, and J. S. Speck, "RAPID COMMUNICATIONS-Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Nonpolar InxGa1-xN/GaN (1100) multiple quantum wells grown on g-LiAlO2 (100) by plasma-assisted", Physical Review-Section B-Condensed Matter, vol. 67, no. 4: Woodbury, NY: published by the American Physical Society through the American Institute of Physics, c1998-, pp. 41306R, 2003.
Miller, EJ., DM. Schaadt, ET. Yu, P. Waltereit, C. Poblenz, and JS. Speck, "Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment", Applied physics letters, vol. 82, no. 8: AIP, pp. 1293–1295, 2003.
Petroff, P. M., J. S. Speck, J. Anna Johnson, and H. Lee, Strain-engineered, self-assembled, semiconductor quantum dot lattices, 2003.
2004
Zhang, H., EJ. Miller, ET. Yu, C. Poblenz, and JS. Speck, "Analysis of interface electronic structure in In x Ga 1- x N/GaN heterostructures", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 22, no. 4: AVS, pp. 2169–2174, 2004.
Waltereit, P., H. Sato, C. Poblenz, DS. Green, JS. Brown, M. McLaurin, T. Katona, SP. DenBaars, JS. Speck, J-H. Liang, et al., "Blue GaN-based light-emitting diodes grown by molecular-beam epitaxy with external quantum efficiency greater than 1.5%", Applied physics letters, vol. 84, no. 15: AIP, pp. 2748–2750, 2004.
Poblenz, C., P. Waltereit, S. Rajan, S. Heikman, UK. Mishra, and JS. Speck, "Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 22, no. 3: AVS, pp. 1145–1149, 2004.
Sun, Y. Jun, O. Brandt, S. Cronenberg, S. Dhar, H. T. Grahn, K. H. Ploog, P. Waltereit, and J. S. Speck, "Erratum: Nonpolar In x Ga 1- x N/G a N (1 1\= 0 0) multiple quantum wells grown on γ- L i A l O 2 (100) by plasma-assisted molecular-beam epitaxy [Phys. Rev. B 67, 041306 (R)(2003)]", Physical Review B, vol. 69, no. 12: APS, pp. 129902, 2004.
Brown, J., F. Wu, PM. Petroff, and JS. Speck, "GaN quantum dot density control by rf-plasma molecular beam epitaxy", Applied physics letters, vol. 84, no. 5: AIP, pp. 690–692, 2004.
Lombardet, B., R. Ferrini, LA. Dunbar, R. Houdré, C. Cuisin, O. Drisse, F. Lelarge, F. Pommereau, F. Poingt, GH. Duan, et al., "LASERS, OPTICS, AND OPTOELECTRONICS", Appl. Phys. Lett, vol. 85, no. 22, pp. 5391, 2004.
Lombardet, B., R. Ferrini, LA. Dunbar, R. Houdré, C. Cuisin, O. Drisse, F. Lelarge, F. Pommereau, F. Poingt, GH. Duan, et al., "LASERS, OPTICS, AND OPTOELECTRONICS", Appl. Phys. Lett, vol. 85, no. 22, pp. 5391, 2004.
Zhang, H., EJ. Miller, ET. Yu, C. Poblenz, and JS. Speck, "Measurement of polarization charge and conduction-band offset at In x Ga 1- x N/GaN heterojunction interfaces", Applied physics letters, vol. 84, no. 23: AIP, pp. 4644–4646, 2004.
Andrews, AM., R. LeSar, MA. Kerner, JS. Speck, AE. Romanov, AL. Kolesnikova, M. Bobeth, and W. Pompe, "Modeling crosshatch surface morphology in growing mismatched layers. Part II: Periodic boundary conditions and dislocation groups", Journal of applied physics, vol. 95, no. 11: AIP, pp. 6032–6047, 2004.
Speck, J. S., and P. M. Petroff, Order Lattices of Quantum Dots: DTIC Document, 2004.
Zhang, H., EJ. Miller, ET. Yu, C. Poblenz, and JS. Speck, "Papers from the 31st Conference on the Physics and Chemistry of Semiconductor Interfaces-GaN and Related Materials-Analysis of interface electronic structure in InxGa1-xN/GaN heterostructures", Journal of Vacuum Science and Technology-Section B, vol. 22, no. 4: Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-, pp. 2169–2174, 2004.
Rajan, S., P. Waltereit, C. Poblenz, S. J. Heikman, D. S. Green, J. S. Speck, and U. K. Mishra, "Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE", IEEE Electron Device Letters, vol. 25, no. 5: IEEE, pp. 247–249, 2004.
Andrews, AM., R. LeSar, MA. Kemer, JS. Speck, AE. Romanov, AL. Koiesnikova, M. Bobeth, and W. Pompe, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERT1ES OF CONDENSED MATTER (PACS 61-68, 78)-Modeling crosshatch surface moiphology in grovving mismatched layers. Part II: Periodic boundary", Journal of Applied Physics, vol. 95, no. 11: New York, NY: American Institute of Physics, c1937-, pp. 6032–6047, 2004.

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