Publications

Found 645 results
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2017
Shen, C., C. Lee, T. Khee Ng, J. S. Speck, S. Nakamura, S. P. DenBaars, and B. S. Ooi, "Integrated photonic platform based on semipolar InGaN/GaN multiple section laser diodes", Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2017 Conference on: IEEE, pp. 1–2, 2017.
Shen, C., C. Lee, T. Khee Ng, J. S. Speck, S. Nakamura, S. P. DenBaars, and B. S. Ooi, "Integrated photonic platform based on semipolar InGaN/GaN multiple section laser diodes", Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2017 Conference on: IEEE, pp. 1–2, 2017.
Mughal, A. J., B. Carberry, S. Ho Oh, A. Myzaferi, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Optoelectronic properties of doped hydrothermal ZnO thin films", physica status solidi (a), vol. 214, no. 6, 2017.
Iso, K., H. Yamada, M. Saito, A. Hirai, S. P. DenBaars, J. S. Speck, and S. Nakamura, Planar nonpolar group iii-nitride films grown on miscut substrates, 2017.
Mughal, A. J., E. C. Young, A. I. Alhassan, J. Back, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs", Applied Physics Express, vol. 10, no. 12: IOP Publishing, pp. 121006, 2017.
Ivanov, R., S. Marcinkevičius, M. D. Mensi, O. Martinez, L. Y. Kuritzky, D. J. Myers, S. Nakamura, and J. S. Speck, "Polarization-Resolved Near-Field Spectroscopy of Localized States in m-Plane In x Ga 1- x N/Ga N Quantum Wells", Physical Review Applied, vol. 7, no. 6: American Physical Society, pp. 064033, 2017.
Ivanov, R., S. Marcinkevičius, T. K. Uždavinys, L. Y. Kuritzky, S. Nakamura, and J. S. Speck, "Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells", Applied Physics Letters, vol. 110, no. 3: AIP Publishing, pp. 031109, 2017.
Shen, C., T. Khee Ng, C. Lee, J. T. Leonard, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications", Gallium Nitride Materials and Devices XII, vol. 10104: International Society for Optics and Photonics, pp. 101041U, 2017.
Shen, C., T. Khee Ng, C. Lee, J. T. Leonard, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications", Gallium Nitride Materials and Devices XII, vol. 10104: International Society for Optics and Photonics, pp. 101041U, 2017.
Fireman, M. N., B. Bonef, E. C. Young, N. Nookala, M. A. Belkin, and J. S. Speck, "Strain compensated superlattices on m-plane gallium nitride by ammonia molecular beam epitaxy", Journal of Applied Physics, vol. 122, no. 7: AIP Publishing, pp. 075105, 2017.
Mughal, A. J., B. Carberry, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Structural and Optical Properties of Group III Doped Hydrothermal ZnO Thin Films", Journal of Electronic Materials, vol. 46, no. 3: Springer US, pp. 1821–1825, 2017.
Holder, C. O., D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser, 2017.
Shen, C., T. Khee Ng, Y. Guo, C. Lee, J. T. Leonard, G. Liu, K. Ting Ho, H. M. Oubei, X. Sun, J. H. Lerma, et al., Towards III-nitride photonic IC: a new platform for smart lighting and visible light communication, 2017.
Lee, C., J. S. Speck, S. Nakamura, S. P. DenBaars, C. Shen, OOI. F. R. O. M. KAUST, A. Y. Alyamani, and MUNIR. M. E. L. - D. E. S. O. U. KACST, "Turbocharging LiFi with semi-polar lasers", III-Vs get out and about, pp. 60, 2017.
Kowsz, S. J., E. C. Young, B. P. Yonkee, C. D. Pynn, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells", Optics express, vol. 25, no. 4: Optical Society of America, pp. 3841–3849, 2017.
2016
Malkowski, T. F., S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Acidic ammonothermal growth of gallium nitride in a liner-free molybdenum alloy autoclave", Journal of Crystal Growth, vol. 456: North-Holland, pp. 21–26, 2016.
NiO, S-transparent., "applications and materials science", Phys. Status Solidi A, vol. 1, no. x2215, pp. x0029, 2016.
Pimputkar, S., JS. Speck, and S. Nakamura, "Basic ammonothermal GaN growth in molybdenum capsules", Journal of Crystal Growth, vol. 456: North-Holland, pp. 15–20, 2016.
Leonard, JT., EC. Young, BP. Yonkee, DA. Cohen, C. Shen, T. Margalith, T. Khee Ng, SP. DenBaars, B. S. Ooi, JS. Speck, et al., "Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts", Gallium Nitride Materials and Devices XI, vol. 9748: International Society for Optics and Photonics, pp. 97481B, 2016.
Yonkee, B. P., E. C. Young, C. Lee, J. T. Leonard, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact", Optics express, vol. 24, no. 7: Optical Society of America, pp. 7816–7822, 2016.
Kowsz, S. J., C. D. Pynn, F. Wu, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Designing optically pumped InGaN quantum wells with long wavelength emission for a phosphor-free device with polarized white-light emission", Gallium Nitride Materials and Devices XI, vol. 9748: International Society for Optics and Photonics, pp. 97481Z, 2016.
Hwang, D., B. Yonkee, R. M. Farrell, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Development of c-plane thin-film flip-chip LEDs fabricated by photoelectrochemical (PEC) liftoff", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–1, 2016.
Lee, C., C. Zhang, D. L. Becerra, S. Lee, C. A. Forman, S. Ho Oh, R. M. Farrell, J. S. Speck, S. Nakamura, J. E. Bowers, et al., "Dynamic characteristics of 410 nm semipolar (20 2 1) iii-nitride laser diodes with a modulation bandwidth of over 5 ghz", Applied Physics Letters, vol. 109, no. 10: AIP Publishing, pp. 101104, 2016.
Feneberg, M., J. Nixdorf, C. Lidig, R. Goldhahn, Z. Galazka, O. Bierwagen, and J. S. Speck, "Erratum: Many-electron effects on the dielectric function of cubic In 2 O 3: Effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift [Phys. Rev. B 93, 045203 (2016)]", Physical Review B, vol. 94, no. 23: American Physical Society, pp. 239905, 2016.
Young, NG., RM. Farrell, M. Iza, S. Nakamura, SP. DenBaars, C. Weisbuch, and JS. Speck, "Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications", Journal of Crystal Growth, vol. 455: North-Holland, pp. 105–110, 2016.

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