Publications

Found 645 results
Author Title Type [ Year(Asc)]
Filters: First Letter Of Last Name is N  [Clear All Filters]
2010
Baker, T. J., B. A. Haskell, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura, Technique for the growth of planar semi-polar gallium nitride, 2010.
DenBaars, S. P., S. Nakamura, and J. S. Speck, Transparent mirrorless light emitting diode, 2010.
DenBaars, S. P., S. Nakamura, and J. S. Speck, Transparent mirrorless light emitting diode, nov # " 11", 2010.
Dasgupta, S., Nidhi, D. F. Brown, F. Wu, S. Keller, J. S. Speck, and U. K. Mishra, "Ultralow nonalloyed ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In (Ga) N regrowth", Applied physics letters, vol. 96, no. 14: AIP, pp. 143504, 2010.
Dasgupta, S., DF. Nidhi, TE. Mates, S. Keller, JS. Speck, and UK. Mishra, "Ultra-low ohmic contacts to N-polar GaN HEMTs by In (Ga) N based source-drain regrowth by Plasma MBE", Proceedings of CS MANTECH Conference. Oregon, USA, pp. 111–114, 2010.
2009
Da Lin, Y-., A. Chakraborty, S. Brinkley, H. Chih Kuo, T. Melo, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Characterization of blue-green m-plane InGaN light emitting diodes", Applied Physics Letters, vol. 94, no. 26: AIP, pp. 261108, 2009.
Garrett, G. A., H. Shen, M. Wraback, A. Tyagi, M. C. Schmidt, J. S. Speck, S. P. DenBaars, and S. Nakamaura, "Comparison of time-resolved photoluminescence from InGaN single quantum wells grown on nonpolar and semipolar bulk GaN substrates", physica status solidi (c), vol. 6, no. S2: WILEY-VCH Verlag, 2009.
Asamizu, H., M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1 12 2) Plane Gallium Nitrides", Applied physics express, vol. 2, no. 2: IOP Publishing, pp. 021002, 2009.
Shen, H., M. Wraback, H. Zhong, A. Tyagi, SP. DenBaars, S. Nakamura, and JS. Speck, "Determination of polarization field in a semipolar (11 2\= 2) In Ga/ Ga N single quantum well using Franz–Keldysh oscillations in electroreflectance", Applied Physics Letters, vol. 94, no. 24: AIP, pp. 241906, 2009.
Bierwagen, O., T. Nagata, T. Ive, CG. Van de Walle, and JS. Speck, "Dissipation-factor-based criterion for the validity of carrier-type identification by capacitance-voltage measurements", Applied Physics Letters, vol. 94, no. 15: AIP, pp. 152110, 2009.
Letts, E. R., J. S. Speck, and S. Nakamura, "Effect of indium on the physical vapor transport growth of AlN", Journal of Crystal Growth, vol. 311, no. 4: Elsevier, pp. 1060–1064, 2009.
Zhong, H., A. Tyagi, N. Pfaff, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Enhancing the light extraction efficiency of blue semipolar (1011) nitride-based light emitting diodes through surface patterning", Japanese Journal of Applied Physics, vol. 48, no. 3R: IOP Publishing, pp. 030201, 2009.
Saito, M., H. Yamada, K. Iso, H. Sato, H. Hirasawa, D. S. Kamber, T. Hashimoto, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Evaluation of GaN substrates grown in supercritical basic ammonia", Applied Physics Letters, vol. 94, no. 5: AIP, pp. 052109, 2009.
Chakraborty, A., B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition, 2009.
D'evelyn, M. P., J. S. Speck, M. T. Coulter, and S. Nakamura, Heater device and method for high pressure processing of crystalline materials, 2009.
Navarro, A., C. Rivera, J. Pereiro, E. Munoz, B. Imer, SP. DenBaars, and JS. Speck, "High responsivity A-plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications", Applied Physics Letters, vol. 94, no. 21: AIP, pp. 213512, 2009.
Newman, S. A., D. S. Kamber, T. J. Baker, Y. Wu, F. Wu, Z. Chen, S. Namakura, J. S. Speck, and S. P. DenBaars, "Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy", Applied Physics Letters, vol. 94, no. 12: AIP, pp. 121906, 2009.
Newman, S. A., D. S. Kamber, T. J. Baker, Y. Wu, F. Wu, Z. Chen, S. Namakura, J. S. Speck, and S. P. DenBaars, "Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy", Applied Physics Letters, vol. 94, no. 12: AIP, pp. 121906, 2009.
Akasaki, I., T. Nishinaga, B. Monemar, Y. Nanishi, A. Yoshikawa, K. Kishino, H. Amano, K. Hiramatsu, N. Shibata, H. Asahi, et al., "List of Committee Members", Journal of Crystal Growth, vol. 311, pp. 2760, 2009.
Akasaki, I., T. Nishinaga, B. Monemar, Y. Nanishi, A. Yoshikawa, K. Kishino, H. Amano, K. Hiramatsu, N. Shibata, H. Asahi, et al., "List of Committee Members", Journal of Crystal Growth, vol. 311, pp. 2760, 2009.
Sato, H., R. B. Chung, F. Wu, J. S. Speck, S. P. DenBaars, and S. Nakamura, MOCVD GROWTH TECHNIQUE FOR PLANAR SEMIPOLAR (Al, In, Ga, B) N BASED LIGHT EMITTING DIODES, 2009.
Hardy, M. T., K. M. Kelchner, Y-. Da Lin, P. Shan Hsu, K. Fujito, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, "m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching", Applied Physics Express, vol. 2, no. 12: IOP Publishing, pp. 121004, 2009.
Da Lin, Y-., C-Y. Huang, M. T. Hardy, P. Shan Hsu, K. Fujito, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "m-plane pure blue laser diodes with p-GaN", Applied physics letters, vol. 95, no. 8: American Institute of Physics, 2009.
Da Lin, Y-., C-Y. Huang, M. T. Hardy, P. Shan Hsu, K. Fujito, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "m-plane pure blue laser diodes with p-GaN/n-AlGaN-based asymmetric cladding and InGaN-based wave-guiding layers", Applied Physics Letters, vol. 95, no. 8: AIP, pp. 081110, 2009.
Bierwagen, O., M. E. White, M-Y. Tsai, T. Nagata, and J. S. Speck, "Non-alloyed Schottky and ohmic contacts to as-grown and oxygen-plasma treated n-type SnO2 (110) and (101) thin films", Applied Physics Express, vol. 2, no. 10: IOP Publishing, pp. 106502, 2009.

Pages