Publications

Found 645 results
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2011
Hardy, M. T., Y-. Da Lin, H. Ohta, S. P. DenBaars, J. S. Speck, S. Nakamura, and K. M. Kelchner, Superluminescent diodes by crystallographic etching, 2011.
Chung, R. B., O. Bierwagen, F. Wu, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al0. 82In0. 18N Grown on GaN", Japanese Journal of Applied Physics, vol. 50, no. 10R: IOP Publishing, pp. 101001, 2011.
Toledo, N., C. Neufeld, M. Scarpulla, T. Buehl, S. Cruz, A. Gossard, S. DenBaars, J. Speck, and U. Mishra, "Wafer Bonded GaAs-Sapphire for Photovoltaic Applications via Adhesive Bonding", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Nagata, T., O. Bierwagen, ME. White, MY. Tsai, Y. Yamashita, H. Yoshikawa, N. Ohashi, K. Kobayashi, T. Chikyow, and JS. Speck, "XPS study of Sb-/In-doping and surface pinning effects on the Fermi level in SnO 2 (101) thin films", Applied Physics Letters, vol. 98, no. 23: AIP, pp. 232107, 2011.
2010
Tyagi, A., R. M. Farrell, K. M. Kelchner, C.-Y. Huang, P. S. Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. A. Cohen, et al., "AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm", Applied Physics Express, vol. 3, pp. 011002, 2010.
Kelchner, K. M., R. M. Farrell, Y-. Da Lin, P. Shan Hsu, M. T. Hardy, F. Wu, D. A. Cohen, H. Ohta, J. S. Speck, S. Nakamura, et al., "Continuous-wave operation of pure blue AlGaN-cladding-free nonpolar InGaN/GaN laser diodes", Applied Physics Express, vol. 3, no. 9: IOP Publishing, pp. 092103, 2010.
Pimputkar, S., D. S. Kamber, M. Saito, S. P. DenBaars, J. S. Speck, and S. Nakamura, Group-iii nitride monocrystal with improved crystal quality grown on an etched-back seed crystal and method of producing the same, 2010.
Kamber, D. S., S. Nakamura, and J. S. Speck, Growth and manufacture of reduced dislocation density and free-standing aluminum nitride films by hydride vapor phase epitaxy, mar # " 18", 2010.
Haskell, B. A., M. D. Craven, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura, Growth of reduced dislocation density non-polar gallium nitride, 2010.
Saito, M., S. P. DenBaars, J. S. Speck, and S. Nakamura, Hexagonal wurtzite single crystal and hexagonal wurtzite single crystal substrate, 2010.
Da Lin, Y-., S. Yamamoto, C-Y. Huang, C-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes", Applied Physics Express, vol. 3, no. 8: IOP Publishing, pp. 082001, 2010.
Da Lin, Y-., S. Yamamoto, C-Y. Huang, C-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes", Applied Physics Express, vol. 3, pp. 082001, 2010.
Hsu, P. Shan, K. M. Kelchner, A. Tyagi, R. M. Farrell, D. A. Haeger, K. Fujito, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, "InGaN/GaN blue laser diode grown on semipolar (3031) free-standing GaN substrates", Applied physics express, vol. 3, no. 5: IOP Publishing, pp. 052702, 2010.
Young, E. C., F. Wu, A. E. Romanov, A. Tyagi, C. S. Gallinat, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Lattice tilt and misfit dislocations in (1122) semipolar GaN heteroepitaxy", Applied physics express, vol. 3, no. 1: IOP Publishing, pp. 011004, 2010.
Farrell, RM., PS. Hsu, DA. Haeger, K. Fujito, SP. DenBaars, JS. Speck, and S. Nakamura, "Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes", Applied Physics Letters, vol. 96, no. 23: AIP, pp. 231113, 2010.
Zhong, H., J. F. Kaeding, R. Sharma, J. S. Speck, S. P. DenBaars, and S. Nakamura, Method for growth of semipolar (Al, In, Ga, B) N optoelectronic devices, 2010.
Kaeding, J. F., D-S. Lee, M. Iza, T. J. Baker, H. Sato, B. A. Haskell, J. S. Speck, S. P. DenBaars, S. Nakamura, and others, Method for improved growth of semipolar (Al, In, Ga, B) N, 2010.
Kaeding, J. F., D-S. Lee, M. Iza, T. J. Baker, H. Sato, B. A. Haskell, J. S. Speck, S. P. DenBaars, and S. Nakamura, Method for improved growth of semipolar (al, in, ga, b) n, 2010.
Huang, C-Y., Y-. Da Lin, A. Tyagi, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Optical waveguide simulations for the optimization of InGaN-based green laser diodes", Journal of Applied Physics, vol. 107, no. 2: AIP, pp. 023101, 2010.
Farrell, R. M., M. C. Schmidt, K-C. Kim, H. Masui, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, Optimization of laser bar orientation for nonpolar and semipolar (Ga, Al, In, B) N diode lasers, 2010.
Farrell, RM., DA. Haeger, X. Chen, CS. Gallinat, RW. Davis, M. Cornish, K. Fujito, S. Keller, SP. DenBaars, S. Nakamura, et al., "Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates", Applied Physics Letters, vol. 96, no. 23: AIP, pp. 231907, 2010.
Da Lin, Y-., S. Yamamoto, C-Y. Huang, C-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Photonics, quantum electronics, optics, and spectroscopy 082001 High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes", Applied Physics Express, vol. 3, no. 8, 2010.
Shen, H., GA. Garrett, M. Wraback, H. Zhong, A. Tyagi, SP. DenBaars, S. Nakamura, and JS. Speck, "Polarization field crossover in semi-polar InGaN/GaN single quantum wells", physica status solidi (c), vol. 7, no. 10: Wiley Online Library, pp. 2378–2381, 2010.
Wu, F., Y-. Da Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN", Applied Physics Letters, vol. 96, no. 23: AIP, pp. 231912, 2010.
Nagata, T., O. Bierwagen, M. E. White, M-Y. Tsai, and J. S. Speck, "Study of the Au Schottky contact formation on oxygen plasma treated n-type SnO 2 (101) thin films", Journal of Applied Physics, vol. 107, no. 3: AIP, pp. 033707, 2010.

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