Publications

Found 909 results
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2013
Schaake, C. A., D. F. Brown, B. L. Swenson, S. Keller, J. S. Speck, and U. K. Mishra, "A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency", Semiconductor Science and Technology, vol. 28, no. 10: IOP Publishing, pp. 105021, 2013.
Farrell, RM., AA. Al-Heji, CJ. Neufeld, X. Chen, M. Iza, SC. Cruz, S. Keller, S. Nakamura, SP. DenBaars, UK. Mishra, et al., "Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells", Applied Physics Letters, vol. 103, no. 24: AIP, pp. 241104, 2013.
Dasgupta, S., J. Lu, A. Raman, C. Hurni, G. Gupta, J. S. Speck, U. K. Mishra, and others, "Estimation of hot electron relaxation time in gan using hot electron transistors", Applied Physics Express, vol. 6, no. 3: IOP Publishing, pp. 034002, 2013.
Chakraborty, A., B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition, 2013.
Marchand, H., B. J. Moran, U. K. Mishra, and J. S. Speck, Field-effect transistor with compositionally graded nitride layer on a silicaon substrate, 2013.
Marchand, H., B. J. Moran, U. K. Mishra, and J. S. Speck, Field-effect transistor with compositionally graded nitride layer on a silicaon substrate, 2013.
Marchand, H., B. J. Moran, U. K. Mishra, and J. S. Speck, Field-effect transistor with compositionally graded nitride layer on a silicaon substrate, 2013.
Liu, X., J. Kim, R. Yeluri, S. Lal, H. Li, J. Lu, S. Keller, B. Mazumder, JS. Speck, and UK. Mishra, "Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition", Journal of Applied Physics, vol. 114, no. 16: AIP, pp. 164507, 2013.
Liu, X., J. Kim, R. Yeluri, S. Lal, H. Li, J. Lu, S. Keller, B. Mazumder, JS. Speck, and UK. Mishra, "Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition", Journal of Applied Physics, vol. 114, no. 16: AIP, pp. 164507, 2013.
Haskell, B. A., P. T. Fini, S. Matsuda, M. D. Craven, S. P. DenBaars, J. S. Speck, and S. Nakamura, Growth of planar, non-polar, group-III nitride films, 2013.
Zhang, Z., AR. Arehart, E. Cinkilic, J. Chen, EX. Zhang, DM. Fleetwood, RD. Schrimpf, B. McSkimming, JS. Speck, and SA. Ringel, "Impact of proton irradiation on deep level states in n-GaN", Applied Physics Letters, vol. 103, no. 4: AIP, pp. 042102, 2013.
Keller, S., R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells", Japanese Journal of Applied Physics, vol. 52, no. 8S: IOP Publishing, pp. 08JC10, 2013.
Jackson, C. M., A. R. Arehart, E. Cinkilic, B. McSkimming, J. S. Speck, and S. A. Ringel, "Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies", Journal of Applied Physics, vol. 113, no. 20: AIP, pp. 204505, 2013.
Kaun, S. W., M. Hoi Wong, U. K. Mishra, and J. S. Speck, "Molecular beam epitaxy for high-performance Ga-face GaN electron devices", Semiconductor Science and Technology, vol. 28, no. 7: IOP Publishing, pp. 074001, 2013.
Marcinkevičius, S., Y. Zhao, KM. Kelchner, S. Nakamura, SP. DenBaars, and JS. Speck, "Near-field investigation of spatial variations of (20 2\= 1\=) InGaN quantum well emission spectra", Applied Physics Letters, vol. 103, no. 13: AIP, pp. 131116, 2013.
Marcinkevičius, S., KM. Kelchner, S. Nakamura, SP. DenBaars, and JS. Speck, "Optical properties of extended and localized states in m-plane InGaN quantum wells", Applied Physics Letters, vol. 102, no. 10: AIP, pp. 101102, 2013.
Farrell, R. M., M. C. Schmidt, K. Choong Kim, H. Masui, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, Optimization of laser bar orientation for nonpolar and semipolar (Ga, Al, In, B) N diode lasers, 2013.
Marcinkevičius, S., KM. Kelchner, LY. Kuritzky, S. Nakamura, SP. DenBaars, and JS. Speck, "Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells", Applied Physics Letters, vol. 103, no. 11: AIP, pp. 111107, 2013.
Metcalfe, G., N. Woodward, H. Shen, M. Wraback, P. Shan Hsu, and J. Speck, "Photoreflectance and Strain Relaxation Studies of Semipolar InGaN", APS Meeting Abstracts, 2013.
Chen, J., Y. S. Puzyrev, C. Xuan Zhang, E. Xia Zhang, M. W. McCurdy, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, S. W. Kaun, E. C. H. Kyle, et al., "Proton-induced dehydrogenation of defects in AlGaN/GaN HEMTs", IEEE Transactions on Nuclear Science, vol. 60, no. 6: IEEE, pp. 4080–4086, 2013.
Kaun, SW., MH. Wong, J. Lu, UK. Mishra, and JS. Speck, "Reduction of carbon proximity effects by including AlGaN back barriers in HEMTs on free-standing GaN", Electronics Letters, vol. 49, no. 14: IET Digital Library, pp. 893–895, 2013.
Cardwell, DW., A. Sasikumar, AR. Arehart, SW. Kaun, J. Lu, S. Keller, JS. Speck, UK. Mishra, SA. Ringel, and JP. Pelz, "Spatially-resolved spectroscopic measurements of Ec- 0.57 eV traps in AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 102, no. 19: AIP, pp. 193509, 2013.
Connelly, B. C., N. T. Woodward, G. D. Metcalfe, L. E. Rodak, N. C. Das, M. L. Reed, A. V. Sampath, H. Shen, M. Wraback, R. M. Farrell, et al., "Study of temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy", Lasers and Electro-Optics (CLEO), 2013 Conference on: IEEE, pp. 1–2, 2013.
Connelly, B., N. Woodward, G. D. Metcalfe, L. E. Rodak, N. C. Das, M. Reed, A. V. Sampath, H. Shen, M. Wraback, R. M. Farrell, et al., "Temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy", CLEO: Science and Innovations: Optical Society of America, pp. CTh1M–7, 2013.
Metcalfe, G. D., A. Hirai, E. C. Young, J. S. Speck, H. Shen, and M. Wraback, "Terahertz studies of carrier localization in spontaneously forming polar lateral heterostructures", physica status solidi (RRL)-Rapid Research Letters, vol. 7, no. 11: Wiley Online Library, pp. 993–996, 2013.

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