Publications
Found 909 results
Author Title Type [ Year
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, "Electrical and structural properties of AlGaN/AlGaN superlattice structures grown by metal-organic chemical vapor deposition", Optical Materials, vol. 23, no. 1-2: North-Holland, pp. 187–195, 2003.
, "Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures", physica status solidi (c), no. 6: WILEY-VCH Verlag, pp. 1878–1907, 2003.
, "Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures Part A: Polarization and pyroelectronics", Group III-nitrides and Their Heterostructures: Growth, Characterization and Applications: John Wiley & Sons Inc, pp. 1878, 2003.
, "GaN based high brightness LEDs and UV LEDs", Electron Devices Meeting, 2003. IEDM'03 Technical Digest. IEEE International: IEEE, pp. 16–1, 2003.
, "GaN based high brightness LEDs and UV LEDs", Electron Devices Meeting, 2003. IEDM'03 Technical Digest. IEEE International: IEEE, pp. 16–1, 2003.
, "GaN/AlGaN/GaN heterostructure and its application to the dispersion removal in HEMTs", Abstracts of 2003 MRS Spring Meeting, pp. 81, 2003.
, "GaN/AlGaN/GaN heterostructure and its application to the dispersion removal in HEMTs", Abstracts of 2003 MRS Spring Meeting, pp. 81, 2003.
, "Growth and fabrication of short-wavelength UV LEDs [5187-31]", PROCEEDINGS-SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING: International Society for Optical Engineering; 1999, pp. 250–259, 2003.
, "Growth and fabrication of short-wavelength UV LEDs [5187-31]", PROCEEDINGS-SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING: International Society for Optical Engineering; 1999, pp. 250–259, 2003.
, "Identification of carbon-related bandgap states in GaN grown by MOCVD", MRS Online Proceedings Library Archive, vol. 798: Cambridge University Press, 2003.
, "Identification of carbon-related bandgap states in GaN grown by MOCVD", MRS Online Proceedings Library Archive, vol. 798: Cambridge University Press, 2003.
, "Impact of Growth Pressure on Defects in GaN Grown", Proceedings of the IEEE... International Symposium on Compound Semiconductors, vol. 30: IEEE, pp. 42, 2003.
, "Impact of Growth Pressure on Defects in GaN Grown", Proceedings of the IEEE... International Symposium on Compound Semiconductors, vol. 30: IEEE, pp. 42, 2003.
, "Impact of growth pressure on defects in GaN grown by metalorganic chemical vapor deposition", Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on: IEEE, pp. 42–48, 2003.
, "Impact of growth pressure on defects in GaN grown by metalorganic chemical vapor deposition", Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on: IEEE, pp. 42–48, 2003.
, "Influence of Growth Parameters on the Deep Level Spectrum in MBE-Grown n-GaN", MRS Online Proceedings Library Archive, vol. 798: Cambridge University Press, 2003.
, "Magnetotransport measurement of effective mass, quantum scattering time, and alloy scattering potential of polarization-doped 3D electron slabs in graded-AlGaN", physica status solidi (c), no. 7: Wiley Online Library, pp. 2339–2342, 2003.
, "Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN", Physical Review B, vol. 67, no. 15: APS, pp. 153306, 2003.
, "Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy", Journal of applied physics, vol. 94, no. 12: AIP, pp. 7611–7615, 2003.
, "Photoreflectance studiesof N-and Ga-face AlGaN/GaN heterostructures confininga polarisation induced 2DEG", physica status solidi (b), vol. 240, no. 2: Wiley Online Library, pp. 380–383, 2003.
, "Polarity control during molecular beam epitaxy growth of Mg-doped GaN", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 21, no. 4: AVS, pp. 1804–1811, 2003.
, "Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures", Journal of applied physics, vol. 93, no. 12: AIP, pp. 10114–10118, 2003.
, "Polarization-induced three-dimensional electron slabs in III-V Nitride semiconductors", APS March Meeting Abstracts, 2003.
, "Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment", Applied physics letters, vol. 82, no. 8: AIP, pp. 1293–1295, 2003.
, "Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN (4", Physical Review-Section B-Condensed Matter, vol. 67, no. 15: Woodbury, NY: published by the American Physical Society through the American Institute of Physics, c1998-, pp. 153306–153306, 2003.