Publications

Found 696 results
Author Title Type [ Year(Asc)]
Filters: First Letter Of Last Name is K  [Clear All Filters]
2013
Shivaraman, R., Y. Kawaguchi, S. Tanaka, SP. DenBaars, S. Nakamura, and JS. Speck, "Comparative analysis of 20 2\= 1 and 20 2\= 1\= semipolar GaN light emitting diodes using atom probe tomography", Applied Physics Letters, vol. 102, no. 25: AIP, pp. 251104, 2013.
Kawaguchi, Y., S-C. Huang, R. M. Farrell, Y. Zhao, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Dependence of electron overflow on emission wavelength and crystallographic orientation in single-quantum-well III–nitride light-emitting diodes", Applied Physics Express, vol. 6, no. 5: IOP Publishing, pp. 052103, 2013.
DenBaars, S. P., D. Feezell, K. Kelchner, S. Pimputkar, C-C. Pan, C-C. Yen, S. Tanaka, Y. Zhao, N. Pfaff, R. Farrell, et al., "Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays", Acta Materialia, vol. 61, no. 3: Pergamon, pp. 945–951, 2013.
Schaake, C. A., D. F. Brown, B. L. Swenson, S. Keller, J. S. Speck, and U. K. Mishra, "A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency", Semiconductor Science and Technology, vol. 28, no. 10: IOP Publishing, pp. 105021, 2013.
Farrell, RM., AA. Al-Heji, CJ. Neufeld, X. Chen, M. Iza, SC. Cruz, S. Keller, S. Nakamura, SP. DenBaars, UK. Mishra, et al., "Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells", Applied Physics Letters, vol. 103, no. 24: AIP, pp. 241104, 2013.
Kelchner, K. M., L. Y. Kuritzky, K. Fujito, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates", Journal of Crystal Growth, vol. 382: Elsevier, pp. 80–86, 2013.
Kelchner, K. M., L. Y. Kuritzky, K. Fujito, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates", Journal of Crystal Growth, vol. 382: Elsevier, pp. 80–86, 2013.
Chakraborty, A., B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition, 2013.
Liu, X., J. Kim, R. Yeluri, S. Lal, H. Li, J. Lu, S. Keller, B. Mazumder, JS. Speck, and UK. Mishra, "Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition", Journal of Applied Physics, vol. 114, no. 16: AIP, pp. 164507, 2013.
Liu, X., J. Kim, R. Yeluri, S. Lal, H. Li, J. Lu, S. Keller, B. Mazumder, JS. Speck, and UK. Mishra, "Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition", Journal of Applied Physics, vol. 114, no. 16: AIP, pp. 164507, 2013.
Zhao, Y., S. Ho Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Green semipolar (2021) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth", Applied Physics Express, vol. 6, no. 6: IOP Publishing, pp. 062102, 2013.
Zhao, Y., S. Ho Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Green semipolar (202̄1̄) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth", Applied Physics Express, vol. 6, 6, 2013.
Young, NG., RM. Farrell, YL. Hu, Y. Terao, M. Iza, S. Keller, SP. DenBaars, S. Nakamura, and JS. Speck, "High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates", Applied Physics Letters, vol. 103, no. 17: AIP, pp. 173903, 2013.
Armstrong, AM., K. Kelchner, S. Nakamura, SP. DenBaars, and J. S. Speck, "Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN", Applied Physics Letters, vol. 103, no. 23: AIP, pp. 232108, 2013.
Keller, S., R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells", Japanese Journal of Applied Physics, vol. 52, no. 8S: IOP Publishing, pp. 08JC10, 2013.
Wu, Y-R., S-ting. Yeh, D-W. Lin, C-K. Li, H-C. Kuo, and J. S. Speck, "Influences of indium fluctuation to the carrier transport, auger recombination, and efficiency droop", Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on: IEEE, pp. 111–112, 2013.
Farrell, R. M., D. J. Friedman, NG. Young, EE. Perl, N. Singh, , CJ. Neufeld, M. Iza, SC. Cruz, S. Keller, et al., "InGaN-based solar cells and high-performance broadband optical coatings for ultrahigh efficiency hybrid multijunction device designs", Lasers and Electro-Optics (CLEO), 2013 Conference on: IEEE, pp. 1–2, 2013.
Speck, J. S., C. C. A. Weisbuch, N. Pfaff, L. Kuritzky, and C. Lalau Keraly, Light emitting diode with conformal surface electrical contacts with glass encapsulation, 2013.
Speck, J. S., C. C. A. Weisbuch, N. Pfaff, L. Kuritzky, and C. Lalau Keraly, Light emitting diode with conformal surface electrical contacts with glass encapsulation, 2013.
Nam, K. Bum, H. Mok Kim, and J. S. Speck, Method of forming p-type compound semiconductor layer, 2013.
Kaeding, J. F., D-S. Lee, M. Iza, T. J. Baker, H. Sato, B. A. Haskell, J. S. Speck, S. P. DenBaars, S. Nakamura, and others, Miscut semipolar optoelectronic device, 2013.
Kaun, S. W., M. Hoi Wong, U. K. Mishra, and J. S. Speck, "Molecular beam epitaxy for high-performance Ga-face GaN electron devices", Semiconductor Science and Technology, vol. 28, no. 7: IOP Publishing, pp. 074001, 2013.
Marcinkevičius, S., Y. Zhao, KM. Kelchner, S. Nakamura, SP. DenBaars, and JS. Speck, "Near-field investigation of spatial variations of (20 2\= 1\=) InGaN quantum well emission spectra", Applied Physics Letters, vol. 103, no. 13: AIP, pp. 131116, 2013.
Wong, M. Hoi, S. Keller, S. Dasgupta Nidhi, D. J. Denninghoff, S. Kolluri, D. F. Brown, J. Lu, N. A. Fichtenbaum, E. Ahmadi, U. Singisetti, et al., "N-polar GaN epitaxy and high electron mobility transistors", Semiconductor Science and Technology, vol. 28, no. 7: IOP Publishing, pp. 074009, 2013.
Wong, M. Hoi, S. Keller, S. Dasgupta Nidhi, D. J. Denninghoff, S. Kolluri, D. F. Brown, J. Lu, N. A. Fichtenbaum, E. Ahmadi, U. Singisetti, et al., "N-polar GaN epitaxy and high electron mobility transistors", Semiconductor Science and Technology, vol. 28, no. 7: IOP Publishing, pp. 074009, 2013.

Pages