Publications
Found 696 results
Author Title Type [ Year
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, "Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 68, no. 11: AIP, pp. 1525–1527, 1996.
, "Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 68, no. 11: AIP, pp. 1525–1527, 1996.
, "Morphological and structural transitions in GaN films grown on sapphire by metal-organic chemical vapor deposition", Japanese journal of applied physics, vol. 35, no. 12B: IOP Publishing, pp. L1648, 1996.
, "Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN", Applied physics letters, vol. 68, no. 10: AIP, pp. 1371–1373, 1996.
, "Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN", Applied physics letters, vol. 68, no. 10: AIP, pp. 1371–1373, 1996.
, "Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN", Applied physics letters, vol. 68, no. 10: AIP, pp. 1371–1373, 1996.
, The role of mixed cubic/hexagonal nucleation layers on threading dislocation reduction in epitaxial GaN films: San Francisco Press, Inc., San Francisco, CA (United States), 1996.
, "Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films", Applied physics letters, vol. 68, no. 5: AIP, pp. 643–645, 1996.
, "Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films", Applied physics letters, vol. 68, no. 5: AIP, pp. 643–645, 1996.
, "Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films", Applied physics letters, vol. 68, no. 5: AIP, pp. 643–645, 1996.
, "Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films", Applied Physics Letters, vol. 68, pp. 643-645, 1996.
, "Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films", Applied Physics Letters, vol. 68, pp. 643-645, 1996.
, "Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films", Applied Physics Letters, vol. 68, pp. 643-645, 1996.
, "Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN", Journal of electronic materials, vol. 24, no. 11: Springer-Verlag, pp. 1707–1709, 1995.
, "Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN", Journal of electronic materials, vol. 24, no. 11: Springer-Verlag, pp. 1707–1709, 1995.
, "Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN", Journal of electronic materials, vol. 24, no. 11: Springer-Verlag, pp. 1707–1709, 1995.
, "Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire", Applied Physics Letters, vol. 67, no. 11: AIP, pp. 1541–1543, 1995.
, "Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire", Applied Physics Letters, vol. 67, no. 11: AIP, pp. 1541–1543, 1995.
, "Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire", Applied Physics Letters, vol. 67, no. 11: AIP, pp. 1541–1543, 1995.
, "Progress toward viable epitaxial oxide ferroelectric waveguide heterostructures on GaAs", MRS Online Proceedings Library Archive, vol. 310: Cambridge University Press, 1993.
, About Materials Science, 1983.