Publications

Found 696 results
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1998
Abare, A. C., M. P. Mack, M. W. Hansen, K. R Sink, P. Kozodoy, S. L. Keller, E. L. Hu, J. S. Speck, J. Edward Bowers, U. K. Mishra, et al., "Pulsed operation of (Al, Ga, In) N blue laser diodes", In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, vol. 3284: International Society for Optics and Photonics, pp. 103–113, 1998.
Abare, A. C., M. P. Mack, M. W. Hansen, K. R Sink, P. Kozodoy, S. L. Keller, E. L. Hu, J. S. Speck, J. Edward Bowers, U. K. Mishra, et al., "Pulsed operation of (Al, Ga, In) N blue laser diodes", In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, vol. 3284: International Society for Optics and Photonics, pp. 103–113, 1998.
Hansen, PJ., YE. Strausser, AN. Erickson, EJ. Tarsa, P. Kozodoy, EG. Brazel, JP. Ibbetson, U. Mishra, V. Narayanamurti, SP. DenBaars, et al., "Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition", Applied physics letters, vol. 72, no. 18: AIP, pp. 2247–2249, 1998.
Wu, XH., CR. Elsass, A. Abare, M. Mack, S. Keller, PM. Petroff, SP. DenBaars, JS. Speck, and SJ. Rosner, "Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells", Applied Physics Letters, vol. 72, no. 6: AIP, pp. 692–694, 1998.
Fini, P., X. Wu, EJ. Tarsa, Y. Golan, V. Srikant, S. Keller, SP. DenBaars, and JS. Speck, "Structure and Mechanical and Thermal Properties of Condensed Matter-The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor", Japanese Journal of Applied Physics-Part 1 Regular Papers and Short Notes, vol. 37, no. 8: Tokyo, Japan: Publication Board, Japanese Journal of Applied Physics, c1982-, pp. 4460–4466, 1998.
1997
Chien, AT., JH. Kim, YS. Yoon, JS. Speck, and FF. Lange, "HYDROTHERMAL SYNTHESIS OF Pb (Zrx, Ti 1-x) O 3 POWDERS AND HETEROEPITAXIAL THIN FILMS", Ceram. Trans, vol. 83, pp. 329, 1997.
DenBaars, SP., P. Kozodoy, S. Keller, MP. Mack, A. Abare, X. Wu, JS. Speck, and UK. Mishra, "MOCVD Growth of Group-III Nitrides for High Quality Photonic Devices", OPTOELECTRONICS & COMMUNICATIONS CONFERENCE, vol. 2, pp. 48–49, 1997.
DenBaars, SP., P. Kozodoy, S. Keller, MP. Mack, A. Abare, X. Wu, JS. Speck, and UK. Mishra, "MOCVD Growth of Group-III Nitrides for High Quality Photonic Devices", OPTOELECTRONICS & COMMUNICATIONS CONFERENCE, vol. 2, pp. 48–49, 1997.
Blank, H-R., H. Kroemer, S. Mathis, and JS. Speck, "Structural and electrical properties of low-temperature-grown Al (As, Sb)", Applied physics letters, vol. 71, no. 24: AIP, pp. 3534–3536, 1997.
1996
Sink, RK., S. Keller, BP. Keller, DI. Babić, AL. Holmes, D. Kapolnek, XH. Wu, JS. Speck, SP. DenBaars, and JE. Bowers, "Cleaved facets in GaN by wafer fusion of GaN to InP", MRS Online Proceedings Library Archive, vol. 421: Cambridge University Press, 1996.
Sink, RK., S. Keller, BP. Keller, DI. Babić, AL. Holmes, D. Kapolnek, XH. Wu, JS. Speck, SP. DenBaars, and JE. Bowers, "Cleaved facets in GaN by wafer fusion of GaN to InP", MRS Online Proceedings Library Archive, vol. 421: Cambridge University Press, 1996.
Sink, RK., S. Keller, BP. Keller, DI. Babić, AL. Holmes, D. Kapolnek, XH. Wu, JS. Speck, SP. DenBaars, and JE. Bowers, "Cleaved facets in GaN by wafer fusion of GaN to InP", MRS Online Proceedings Library Archive, vol. 421: Cambridge University Press, 1996.
Sink, RK., S. Keller, BP. Keller, D. I. Babić, AL. Holmes, D. Kapolnek, SP. DenBaars, JE. Bowers, XH. Wu, and JS. Speck, "Cleaved GaN facets by wafer fusion of GaN to InP", Applied physics letters, vol. 68, no. 15: AIP, pp. 2147–2149, 1996.
Sink, RK., S. Keller, BP. Keller, D. I. Babić, AL. Holmes, D. Kapolnek, SP. DenBaars, JE. Bowers, XH. Wu, and JS. Speck, "Cleaved GaN facets by wafer fusion of GaN to InP", Applied physics letters, vol. 68, no. 15: AIP, pp. 2147–2149, 1996.
Sink, RK., S. Keller, BP. Keller, D. I. Babić, AL. Holmes, D. Kapolnek, SP. DenBaars, JE. Bowers, XH. Wu, and JS. Speck, "Cleaved GaN facets by wafer fusion of GaN to InP", Applied physics letters, vol. 68, no. 15: AIP, pp. 2147–2149, 1996.
Wu, XH., LM. Brown, D. Kapolnek, S. Keller, B. Keller, SP. DenBaars, and JS. Speck, "Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3", Journal of applied physics, vol. 80, no. 6: AIP, pp. 3228–3237, 1996.
Wu, XH., LM. Brown, D. Kapolnek, S. Keller, B. Keller, SP. DenBaars, and JS. Speck, "Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3", Journal of applied physics, vol. 80, no. 6: AIP, pp. 3228–3237, 1996.
Wu, XH., LM. Brown, D. Kapolnek, S. Keller, B. Keller, SP. DenBaars, and JS. Speck, "Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3", Journal of applied physics, vol. 80, no. 6: AIP, pp. 3228–3237, 1996.
Wu, X. H., L. M. Brown, D. Kapolnek, S. Keller, B. Keller, S. DenBaars, and J. Speck, "Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3", Journal of Applied Physics, vol. 80, pp. 3228 - 3237, 10, 1996.
Wu, X. H., L. M. Brown, D. Kapolnek, S. Keller, B. Keller, S. DenBaars, and J. Speck, "Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3", Journal of Applied Physics, vol. 80, pp. 3228 - 3237, 10, 1996.
Wu, X. H., L. M. Brown, D. Kapolnek, S. Keller, B. Keller, S. DenBaars, and J. Speck, "Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3", Journal of Applied Physics, vol. 80, pp. 3228 - 3237, 10, 1996.
Keller, S., D. Kapolnek, B. P. Keller, Y. Wu, B. Heying, J. S. Speck, U. K. Mishra, and S. P. DenBaars, "Effect of the trimethylgallium flow during nucleation layer growth on the properties of GaN grown on sapphire", Japanese journal of applied physics, vol. 35, no. 3A: IOP Publishing, pp. L285, 1996.
Keller, S., D. Kapolnek, B. P. Keller, Y. Wu, B. Heying, J. S. Speck, U. K. Mishra, and S. P. DenBaars, "Effect of the trimethylgallium flow during nucleation layer growth on the properties of GaN grown on sapphire", Japanese journal of applied physics, vol. 35, no. 3A: IOP Publishing, pp. L285, 1996.
Keller, S., D. Kapolnek, B. P. Keller, Y. Wu, B. Heying, J. S. Speck, U. K. Mishra, and S. P. DenBaars, "Effect of the trimethylgallium flow during nucleation layer growth on the properties of GaN grown on sapphire", Japanese journal of applied physics, vol. 35, no. 3A: IOP Publishing, pp. L285, 1996.
Keller, S., BP. Keller, Y-F. Wu, B. Heying, D. Kapolnek, JS. Speck, UK. Mishra, and SP. DenBaars, "Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 68, no. 11: AIP, pp. 1525–1527, 1996.

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