Publications
Found 696 results
Author Title Type [ Year
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, "Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure", MRS Online Proceedings Library Archive, vol. 639: Cambridge University Press, 2000.
, "Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure", Journal of Applied Physics, vol. 88, no. 11: AIP, pp. 6583–6588, 2000.
, "Strain relaxation in InGaAs lattice engineered substrates", Journal of Electronic Materials, vol. 29, no. 7: Springer-Verlag, pp. 944–949, 2000.
, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy", Applied Physics Letters, vol. 76, no. 6: New York [etc.] American Institute of Physics., pp. 718–720, 2000.
, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy", Applied Physics Letters, vol. 76, no. 6: New York [etc.] American Institute of Physics., pp. 718–720, 2000.
, "Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers", Applied Physics Letters, vol. 77, no. 24: AIP, pp. 3998–4000, 2000.
, "1. Electronic and Optoelectronic Devices-1.1 Laser diodes-Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes", Physica Status Solidi-A-Applied Research, vol. 176, no. 1: Berlin: Akademie-Verlag,[1970]-c2004., pp. 59–62, 1999.
, "1. Electronic and Optoelectronic Devices-1.1 Laser diodes-Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes", Physica Status Solidi-A-Applied Research, vol. 176, no. 1: Berlin: Akademie-Verlag,[1970]-c2004., pp. 59–62, 1999.
, "Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride", Applied physics letters, vol. 74, no. 14: AIP, pp. 2035–2037, 1999.
, "Chapter 12: Material Growth and Characterization (Wide Gap and Nitride)-Structural and optical properties of low-dislocation-density GaN laterally overgrown by metalorganic chemical vapour", Institute of Physics Conference Series, vol. 162: Bristol [England]; Boston: Adam Hilger, Ltd., c1985-, pp. 681–686, 1999.
, "Chapter 5: Field Effect Transistors (FETs and HEMTs)-First demonstration of AlGaN/GaN heterostructure field effect transistor on GaN grown by lateral epitaxial overgrowth (LEO)", Institute of Physics Conference Series, vol. 162: Bristol [England]; Boston: Adam Hilger, Ltd., c1985-, pp. 177–184, 1999.
, "Electrical characterization of BaTiO 3 heteroepitaxial thin films by hydrothermal synthesis", Journal of materials research, vol. 14, no. 8: Cambridge University Press, pp. 3330–3339, 1999.
, "Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth", Applied physics letters, vol. 74, no. 10: AIP, pp. 1460–1462, 1999.
, "Extended defect reduction in GaN laterally overgrown on Si (111)", CONFERENCE SERIES-INSTITUTE OF PHYSICS, vol. 162: IOP PUBLISHING LTD, pp. 833–836, 1999.
, "Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process", MRS Internet Journal of Nitride Semiconductor Research, vol. 4, pp. 453–458, 1999.
, "First demonstration of AlGaN/GaN heterostructure field effect transistor on GaN grown by lateral epitaxial overgrowth (LEO)", CONFERENCE SERIES-INSTITUTE OF PHYSICS, vol. 162: IOP PUBLISHING LTD, pp. 177–184, 1999.
, "High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Applied physics letters, vol. 74, no. 23: AIP, pp. 3528–3530, 1999.
, "Optical properties of InGaN quantum wells", Materials Science and Engineering: B, vol. 59, no. 1-3: Elsevier, pp. 298–306, 1999.
, "Optical properties of InGaN quantum wells", Materials Science and Engineering: B, vol. 59, no. 1-3: Elsevier, pp. 298–306, 1999.
, "Strain relaxation in InxGa1-xAs lattice engineered substrates", Journal of Electronic Materials, vol. 28, no. 7: The Metals, Minerals, and Materials Society, pp. 1050–1051, 1999.
, "Strain relaxation of In x Ga 1- x As during lateral oxidation of underlying AlAs layers", Applied physics letters, vol. 75, no. 15: AIP, pp. 2253–2255, 1999.
, "Structural and optical properties of GaN laterally overgrown on Si (111) by metalorganic chemical vapor deposition using an AlN buffer layer", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 4, no. 1: Cambridge University Press, 1999.
, "Structural and optical properties of low-dislocation-density GaN laterally overgrown by metalorganic chemical vapor deposition", COMPOUND SEMICONDUCTORS 1998, no. 162: IOP PUBLISHING LTD DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND, pp. 681–686, 1999.
, "Synthesis and characterization of PbTiO 3 powders and heteroepitaxial thin films by hydrothermal synthesis", Journal of materials research, vol. 14, no. 8: Cambridge University Press, pp. 3303–3311, 1999.
, "Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 3: Cambridge University Press, 1998.