Publications

Found 696 results
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2009
Koehl, WF., MH. Wong, C. Poblenz, B. Swenson, UK. Mishra, JS. Speck, and DD. Awschalom, "Current-induced spin polarization in gallium nitride", Applied Physics Letters, vol. 95, no. 7: AIP, pp. 072110, 2009.
Fujiwara, T., S. Rajan, S. Keller, M. Higashiwaki, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors", Applied Physics Express, vol. 2, no. 1: IOP Publishing, pp. 011001, 2009.
Saito, M., H. Yamada, K. Iso, H. Sato, H. Hirasawa, D. S. Kamber, T. Hashimoto, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Evaluation of GaN substrates grown in supercritical basic ammonia", Applied Physics Letters, vol. 94, no. 5: AIP, pp. 052109, 2009.
Dasgupta, S., Y. Pei, B. L. Swenson, D. F. Brown, S. Keller, J. S. Speck, U. K. Mishra, and others, "$ f_ ${$T$}$ $ and $ f_ ${$$\backslash$rm MAX$}$ $ of 47 and 81 GHz, Respectively, on N-Polar GaN/AlN MIS-HEMT", IEEE Electron Device Letters, vol. 30, no. 6: IEEE, pp. 599–601, 2009.
Chakraborty, A., B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition, 2009.
Matioli, E., M. Iza, Y-S. Choi, F. Wu, S. Keller, H. Masui, E. Hu, J. Speck, and C. Weisbuch, "GaN-based embedded 2D photonic crystal LEDs: Numerical optimization and device characterization", physica status solidi (c), vol. 6, no. S2: WILEY-VCH Verlag, 2009.
Matioli, E., S. Keller, F. Wu, Y-S. Choi, E. Hu, J. Speck, and C. Weisbuch, "Growth of embedded photonic crystals for GaN-based optoelectronic devices", Journal of Applied Physics, vol. 106, no. 2: AIP, pp. 024309, 2009.
Wong, M. Hoi, Y. Pei, D. F. Brown, S. Keller, J. S. Speck, and U. K. Mishra, "High performance MBE-grown N-face microwave GaN HEMTs with> 70% PAE", Device Research Conference, 2009. DRC 2009: IEEE, pp. 157–158, 2009.
Wong, M. Hoi, Y. Pei, D. F. Brown, S. Keller, J. S. Speck, and U. K. Mishra, "High-performance N-face GaN microwave MIS-HEMTs with> 70% power-added efficiency", IEEE Electron Device Letters, vol. 30, no. 8: IEEE, pp. 802–804, 2009.
Koblmüller, G., GD. Metcalfe, M. Wraback, F. Wu, CS. Gallinat, and JS. Speck, "In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN", Applied Physics Letters, vol. 94, no. 9: AIP, pp. 091905, 2009.
Newman, S. A., D. S. Kamber, T. J. Baker, Y. Wu, F. Wu, Z. Chen, S. Namakura, J. S. Speck, and S. P. DenBaars, "Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy", Applied Physics Letters, vol. 94, no. 12: AIP, pp. 121906, 2009.
Akasaki, I., T. Nishinaga, B. Monemar, Y. Nanishi, A. Yoshikawa, K. Kishino, H. Amano, K. Hiramatsu, N. Shibata, H. Asahi, et al., "List of Committee Members", Journal of Crystal Growth, vol. 311, pp. 2760, 2009.
Hardy, M. T., K. M. Kelchner, Y-. Da Lin, P. Shan Hsu, K. Fujito, H. Ohta, J. S. Speck, S. Nakamura, and S. P. DenBaars, "m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching", Applied Physics Express, vol. 2, no. 12: IOP Publishing, pp. 121004, 2009.
Kelchner, K. M., Y-. Da Lin, M. T. Hardy, C. Yen Huang, P. Shan Hsu, R. M. Farrell, D. A. Haeger, H. Chih Kuo, F. Wu, K. Fujito, et al., "Nonpolar AlGaN-cladding-free blue laser diodes with InGaN waveguiding", Applied physics express, vol. 2, no. 7: IOP Publishing, pp. 071003, 2009.
Kelchner, K. M., Y-. Da Lin, M. T. Hardy, C. Yen Huang, P. Shan Hsu, R. M. Farrell, D. A. Haeger, H. Chih Kuo, F. Wu, K. Fujito, et al., "Nonpolar AlGaN-cladding-free blue laser diodes with InGaN waveguiding", Applied physics express, vol. 2, no. 7: IOP Publishing, pp. 071003, 2009.
Dasgupta, S., D. F. Brown, S. Keller, J. S. Speck, U. K. Mishra, and others, "N-polar GaN-based highly scaled self-aligned MIS-HEMTs with state-of-the-art f T. L G product of 16.8 GHz-μm", Electron Devices Meeting (IEDM), 2009 IEEE International: IEEE, pp. 1–3, 2009.
Xu, G., Y. J. Ding, I. B. Zotova, C. E. Stutz, D. E. Diggs, N. Fernelius, F. K. Hopkins, C. S. Gallinat, G. Koblmüller, and J. S. Speck, "Observation of clamping of photoluminescence intensities from nonlinear degenerate electron gas in InN", International Quantum Electronics Conference: Optical Society of America, pp. IMH6, 2009.
Gallinat, C. S., G. Koblmüller, and J. S. Speck, "The role of threading dislocations and unintentionally incorporated impurities on the bulk electron conductivity of In-face InN", Applied Physics Letters, vol. 95, no. 2: AIP, pp. 022103, 2009.
Fujiwara, T., S. Keller, M. Higashiwaki, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors", Applied physics express, vol. 2, no. 6: IOP Publishing, pp. 061003, 2009.
Masui, H., D. S. Kamber, S. E. Brinkley, F. Wu, T. J. Baker, H. Zhong, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Spontaneous formation of ${$1 1Ø 0 1$}$ InGaN quantum wells on a (1 1 2Ø 2) GaN template and their electroluminescence characteristics", Semiconductor Science and Technology, vol. 25, no. 1: IOP Publishing, pp. 015003, 2009.
Nagata, T., G. Koblmüller, O. Bierwagen, C. S. Gallinat, and J. S. Speck, "Surface structure and chemical states of a-plane and c-plane InN films", Applied Physics Letters, vol. 95, no. 13: AIP, pp. 132104, 2009.
Metcalfe, G. D., H. Shen, M. Wraback, G. Koblmüller, C. S. Gallinat, and J. S. Speck, "Terahertz emission from nonpolar indium nitride", Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on: IEEE, pp. 1–2, 2009.
Gallinat, CS., G. Koblmu, and others, "Thermal stability, surface kinetics, and MBE growth diagrams for N-and In-face InN", Indium Nitride and Related Alloys: CRC Press, pp. 67–97, 2009.
Miller, N., J. Ager, R. Jones, H. Smith, K. Man Yu, E. Haller, W. Walukiewicz, W. Schaff, C. Gallinat, G. Koblmüller, et al., "Thermopower of n-and p-type InN", APS Meeting Abstracts, 2009.
Reurings, F., F. Tuomisto, C. S. Gallinat, G. Koblmüller, and J. S. Speck, "Vacancy defects probed with positron annihilation spectroscopy in In-polar InN grown by plasma-assisted molecular beam epitaxy: Effects of growth conditions", physica status solidi (c), vol. 6, no. S2: WILEY-VCH Verlag, 2009.

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