Publications

Found 220 results
Author Title Type [ Year(Desc)]
Filters: First Letter Of Last Name is I  [Clear All Filters]
2010
Kaeding, J. F., D-S. Lee, M. Iza, T. J. Baker, H. Sato, B. A. Haskell, J. S. Speck, S. P. DenBaars, S. Nakamura, and others, Method for improved growth of semipolar (Al, In, Ga, B) N, 2010.
Kaeding, J. F., D-S. Lee, M. Iza, T. J. Baker, H. Sato, B. A. Haskell, J. S. Speck, S. P. DenBaars, and S. Nakamura, Method for improved growth of semipolar (al, in, ga, b) n, 2010.
Ben-Yaacov, T., T. Ive, C. G. Van de Walle, U. K. Mishra, J. S. Speck, and S. P. DenBaars, "Properties of In-doped ZnO films grown by metalorganic chemical vapor deposition on GaN (0001) templates", Journal of electronic materials, vol. 39, no. 5: Springer US, pp. 608–611, 2010.
Miller, N., JW. Ager III, HM. Smith III, KM. Yu, EE. Haller, W. Walukiewicz, WJ. Schaff, C. Gallinat, J. Speck, and others, "Thermopower of parallel conducting structures", APS March Meeting Abstracts, 2010.
Miller, N., JW. Ager III, HM. Smith III, KM. Yu, EE. Haller, W. Walukiewicz, WJ. Schaff, C. Gallinat, J. Speck, and others, "Thermopower of parallel conducting structures", APS March Meeting Abstracts, 2010.
2011
Pfüller, C., O. Brandt, T. Flissikowski, HT. Grahn, T. Ive, JS. Speck, and SP. DenBaars, "Comparison of the spectral and temporal emission characteristics of homoepitaxial and heteroepitaxial ZnO nanowires", Applied Physics Letters, vol. 98, no. 11: AIP, pp. 113113, 2011.
Imer, B. M., J. S. Speck, and S. P. DenBaars, Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO), 2011.
Miller, N., E. E. Haller, G. Koblmüller, C. Gallinat, J. S. Speck, W. J. Schaff, M. E. Hawkridge, K. Man Yu, and J. W. Ager III, "Effect of charged dislocation scattering on electrical and electrothermal transport in n-type InN", Physical Review B, vol. 84, no. 7: APS, pp. 075315, 2011.
Neufeld, C. J., S. C. Cruz, R. M. Farrell, M. Iza, J. R. Lang, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Effect of doping and polarization on carrier collection in InGaN quantum well solar cells", Applied Physics Letters, vol. 98, no. 24: AIP, pp. 243507, 2011.
Mayer, M. A., S. Choi, O. Bierwagen, H. M. Smith III, E. E. Haller, J. S. Speck, and W. Walukiewicz, "Electrical and optical properties of p-type InN", Journal of Applied Physics, vol. 110, no. 12: AIP, pp. 123707, 2011.
Masui, H., H. Yamada, K. Iso, J. S. Speck, S. Nakamura, and S. P. DenBaars, Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporation, 2011.
Matioli, E., C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, et al., "High internal and external quantum efficiency InGaN/GaN solar cells", Applied Physics Letters, vol. 98, no. 2: AIP, pp. 021102, 2011.
Farrell, R. M., C. J. Neufeld, S. C. Cruz, J. R. Lang, M. Iza, S. Keller, S. Nakamura, SP. DenBaars, UK. Mishra, and JS. Speck, "High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm", Applied Physics Letters, vol. 98, no. 20: AIP, pp. 201107, 2011.
Schmidt, M. C., C. Poblenz, Y-C. Chang, B. Li, M. J. Mondry, J. Iveland, M. R. Krames, R. Craig, J. W. Raring, J. S. Speck, et al., "High-performance blue and green laser diodes based on nonpolar/semipolar GaN substrates", Laser Technology for Defense and Security VII, vol. 8039: International Society for Optics and Photonics, pp. 80390D, 2011.
Farrell, R. M., C. J. Neufeld, S. C. Cruz, NG. Young, M. Iza, J. R. Lang, Y-L. Hu, D. Simeonov, N. Singh, E. E. Perl, et al., "InGaN-Based Solar Cells for Ultrahigh Efficiency Multijunction Solar Cell Applications", UC Solar Symposlum, 2011.
Neufeld, C. J., S. C. Cruz, R. M. Farrell, M. Iza, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells", Applied Physics Letters, vol. 99, no. 7: AIP, pp. 071104, 2011.
Iso, K., H. Yamada, M. Saito, A. Hirai, S. P. DenBaars, J. S. Speck, and S. Nakamura, Planar nonpolar group iii-nitride films grown on miscut substrates, 2011.
2012
Das, NC., ML. Reed, AV. Sampath, H. Shen, M. Wraback, RM. Farrell, M. Iza, SC. Cruz, , NG. Young, et al., "Anti Reflection (AR) Coating for Indium Gallium Nitride (InGaN) Solar Cells", Army Research Laboratory Report, 08/2012.
Hu, Y-L., R. M. Farrell, C. J. Neufeld, M. Iza, S. C. Cruz, N. Pfaff, D. Simeonov, S. Keller, S. Nakamura, S. P. DenBaars, et al., "Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells", Applied Physics Letters, vol. 100, no. 16: AIP, pp. 161101, 2012.
Masui, H., H. Yamada, K. Iso, A. Hirai, M. Saito, J. S. Speck, S. Nakamura, and S. P. DenBaars, Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut, 2012.
Masui, H., H. Yamada, K. Iso, J. S. Speck, S. Nakamura, and S. P. DenBaars, Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporation, 2012.
Das, NC., ML. Reed, AV. Sampath, H. Shen, M. Wraback, RM. Farrell, M. Iza, SC. Cruz, , NG. Young, et al., "Heterogeneous integration of InGaN and Silicon solar cells for enhanced energy harvesting", Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE: IEEE, pp. 003076–003079, 2012.
Hirai, A., Z. Jia, M. Saito, H. Yamada, K. Iso, S. P. DenBaars, S. Nakamura, and J. S. Speck, Planar nonpolar m-plane group III nitride films grown on miscut substrates, 2012.
Iza, M., C. J. Neufeld, S. C. Cruz, R. M. Farrell, J. S. Speck, S. Nakamura, S. P. DenBaars, and U. K. Mishra, Textured iii-v semiconductor, may # " 3", 2012.
2013
Iveland, J., L. Martinelli, J. Peretti, J. S. Speck, and C. Weisbuch, "Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop", Physical review letters, vol. 110, no. 17: American Physical Society, pp. 177406, 2013.

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